NCP1339
www.onsemi.com
7
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, V
HV
= 120 V, V
Fault
= open, V
FB
= 3 V, V
CS
= 0 V, V
ZCD
= 0 V, C
VCC
= 100 nF ,
C
DRV
= 1 nF, for typical values T
J
= 25°C, for min/max values, T
J
is – 40°C to 125°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolConditions
GATE DRIVE
Fall Time (90−10%)
90 to 10% of V
DRV
t
DRV(fall)
20 ns
Current Capability
Source
Sink
V
DRV
= 2 V
V
DRV
= 10 V
I
DRV(SRC)
I
DRV(SNK)
500
800
mA
High State Voltage
V
CC
= V
CC(off)
+ 0.2 V, R
DRV
= 10 kW
V
CC
= 26 V, R
DRV
= 10 kW
V
DRV(high1)
V
DRV(high2)
8
10
12
14
V
Low Stage Voltage V
Fault
= 4 V V
DRV(low)
0.25 V
FEEDBACK
Feedback Input Open Voltage
V
FB(open)
4.48 4.7 5.0 V
V
FB
to Internal Current
Setpoint Division Ratio
K
FB
3.8 4.0 4.2
FB Pull Up Resistor V
FB
= 0.4 V R
FB
17 20 23
kW
Valley Thresholds
Transition from 1
st
to 2
nd
valley
Transition from 2
nd
to 3
rd
valley
Transition from 3
rd
to 4
th
valley
Transition from 4
th
to 5
th
valley
Transition from 5
th
to 6
th
valley
Transition from 6
th
to FF
Transition from FF to 6
th
valley
Transition from 6
th
to 5
th
valley
Transition from 5
th
to 4
th
valley
Transition from 4
th
to 3
rd
valley
Transition from 3
rd
to 2
nd
valley
Transition from 2
nd
to 1
st
valley
V
FB
decreasing, V
IFF
= 0.8 V
V
FB
decreasing, V
IFF
= 0.8 V
V
FB
decreasing, V
IFF
= 0.8 V
V
FB
decreasing, V
IFF
= 0.8 V
V
FB
decreasing, V
IFF
= 0.8 V
V
FB
decreasing, V
IFF
= 0.8 V
V
FB
increasing, V
IFF
= 0.8 V
V
FB
increasing, V
IFF
= 0.8 V
V
FB
increasing, V
IFF
= 0.8 V
V
FB
increasing, V
IFF
= 0.8 V
V
FB
increasing, V
IFF
= 0.8 V
V
FB
increasing, V
IFF
= 0.8 V
V
H2D
V
H3D
V
H4D
V
H5D
V
H6D
V
HVCOD
V
HVCOI
V
H6I
V
H5I
V
H4I
V
H3I
V
H2I
1.316
1.128
1.034
0.940
0.846
0.760
0.900
1.410
1.504
1.598
1.692
1.880
1.400
1.200
1.100
1.000
0.900
0.800
1.000
1.500
1.600
1.700
1.800
2.000
1.484
1.272
1.166
1.060
0.954
0.830
1.060
1.590
1.696
1.802
1.908
2.120
V
Maximum On Time t
on(MAX)
27 32 40
ms
DEMAGNETIZATION INPUT
ZCD threshold voltage
V
ZCD
decreasing V
ZCD(th)
35 55 90 mV
ZCD hysteresis V
ZCD
increasing V
ZCD(HYS)
15 35 55 mV
Demagnetization Propagation Delay V
ZCD
step from 4.0 V to −0.3 V t
DEM
150 250 ns
Input Voltage Excursion
Upper Clamp
Negative Clamp
I
QZCD
= 5.0 mA
I
QZCD
= −2.0 mA
V
ZCD(MAX)
V
ZCD(MIN)
12.4
−0.9
12.7
−0.7
13
0
V
Blanking Delay After Turn−Off (C, D and E versions)
(F, G, H, I and J versions)
t
ZCD(blank)
2
0.5
3
0.7
4
0.9
ms
Timeout After Last Demagnetization De-
tection
Timeout while in soft−start
Timeout after soft−start complete
t
(out1)
t
(out2)
80
5.1
100
6
120
6.9
ms
CURRENT SENSE
Current Sense Voltage Threshold (V
ILIM1
) V
CS
increasing
V
CS
increasing, V
OPP
= 1 V
V
ILIM1a
V
ILIM1b
0.760
0.760
0.800
0.800
0.840
0.840
V
Cycle by Cycle Leading Edge Blanking
Duration
Minimum on time minus t
CS(delay1)
t
CS(LEB1)
220 275 330 ns
Cycle by Cycle Current Sense Propagation
Delay
V
CS
dv/dt = 1 V/ms, measured from
V
ILIM1
to DRV falling edge
t
CS(delay1)
125 175 ns
Internal peak current setpoint freeze V
IFF
= 0.8 V V
freeze
200 mV
I
FF
pin current source V
IFF
= 0.8 V (I and J versions) I
FF(bias)
−110 −100 −85
mA
NCP1339
www.onsemi.com
8
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, V
HV
= 120 V, V
Fault
= open, V
FB
= 3 V, V
CS
= 0 V, V
ZCD
= 0 V, C
VCC
= 100 nF ,
C
DRV
= 1 nF, for typical values T
J
= 25°C, for min/max values, T
J
is – 40°C to 125°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolConditions
CURRENT SENSE
Abnormal Overcurrent Fault Threshold
V
CS
increasing, V
FB
= 4 V V
ILIM2
1.125 1.200 1.275 V
Abnormal Overcurrent Fault Blanking
Duration
Step V
CS
0 V to V
ILIM2
+ 0.5 V to
DRV falling edge, dV/dt = 10 V/ms
t
CS(LEB2)
90 120 150 ns
Abnormal Overcurrent Fault Propagation
Delay
Step V
CS
0 V to V
ILIM2
+ 0.5 V to
DRV falling edge, dV/dt = 10 V/ms
t
CS(delay2)
125 175 ns
Set point decrease for V
OPP
= − 250 mV V
CS
Increasing, V
FB
= 4 V V
OPP(MAX)
27 31.25 33 %
Overpower Protection Delay
V
CS
dv/dt = 1 V/ms, measured from
V
OPP(MAX)
to DRV falling edge
t
OPP(delay)
125 175 ns
Overpower Signal Blanking Delay t
OPP(blank)
100 120 200 ns
Pull−up Current Source V
CS
= 1.5 V I
CS
−1.5 1.0 −0.5
mA
JITTERING (For E, F, G, I and J versions only)
Frequency of the Jittering CS Pin Source
Current
CS pin being grounded
)
F
jit
1.0 1.3 1.6 kHz
Amplitude of the CS Source Current CS pin being grounded I
jit
85 100 110
mA
HV Pin Voltage for jittering activation HV pin voltage rising (V
in,jit
)
H
210 250 290 V
HV Pin Voltage below which the jittering
Timer activated
HV pin voltage falling (V
in,jit
)
L
185 220 255 V
Blanking Time before Jittering disabling V
HV
< 184 V T
jit(blank)
25 40 55 ms
FAULT PROTECTION
Soft−Start Period
(Done digitally with 63 steps)
Measured from
1
st
DRV pulse to V
CS
= V
ILIM1
t
SSTART
2.8 4.0 5.0 ms
Flyback Overload Fault Timer V
CS
= V
ILIM1
t
OVLD
120 160 200 ms
Overvoltage Protection (OVP) Threshold V
Fault
increasing V
Fault(OVP)
2.79 3.00 3.23 V
Delay Before Fault Confirmation
Used for OVP Detection
Used for OTP Detection
V
Fault
increasing
V
Fault
decreasing
t
delay(Fault_OVP)
t
delay(Fault_OTP)
20
20
27.5
27.5
35
35
ms
Overtemperature Protection (OTP) Thresh-
old (Note 2)
V
Fault
decreasing V
Fault(OTP_in)
0.395 0.40 0.435 V
OTP Pull−up Current Source (Note 2) V
Fault
= V
Fault(OTP_in)
+ 0.2 V
T
J
= 110 °C
I
Fault(OTP)
I
Fault(OTP_110)
42.5
45.5
45.5
48.5
mA
Fault Input Clamp Voltage V
Fault
= open V
Fault(clamp)
1.15 1.7 2.25 V
Fault Input Clamp Series Resistor R
Fault(clamp)
1.32 1.55 1.78
kW
Auto−recovery Timer T
A−rec_timer
1.1 2 s
STAND−BY MANAGEMENT
Frequency clamp Threshold
F
Clamp
23.5 25 27.5 kHz
Skip Threshold V
FB
decreasing V
SKIP
0.35 0.40 0.45 V
Skip Hysteresis V
FB
increasing V
SKIP(HYS)
35 60 85 mV
THERMAL PROTECTION
Thermal Shutdown
(Note 3) T
SHDN
140 150 170 °C
Thermal Shutdown Hysteresis (Note 3) T
SHDN(HYS)
20 40 60 °C
Thermal Shutdown Delay (Note 3) t
delay(TSHDN)
30.0
ms
2. NTC with R
110
= 8.8 kW (TTC03−474).
3. The value is not subjected to production test − verified by design/characterization.
NCP1339
www.onsemi.com
9
TYPICAL CHARACTERISTICS
Figure 4. V
CC(on)
vs. Junction Temperature Figure 5. V
CC(off)
vs. Junction Temperature
TEMPERATURE (°C) TEMPERATURE (°C)
100806040200−20−40
15.20
15.25
15.30
15.35
15.40
15.45
15.50
100806040200−20−40
8.70
8.75
8.80
8.85
8.90
Figure 6. V
CC(inhibit)
vs. Junction Temperature Figure 7. IC1 vs. Junction Temperature
TEMPERATURE (°C) TEMPERATURE (°C)
100806040200−20−40
0.6
0.7
0.8
0.9
1.0
1.1
1.2
100806040200−20−40
−0.75
−0.70
−0.65
−0.60
−0.55
−0.45
−0.40
−0.35
Figure 8. IC2 vs. Junction Temperature Figure 9. V
CC(bias)
vs. Junction Temperature
TEMPERATURE (°C) TEMPERATURE (°C)
100806040200−20−40
−13
−12
−11
−10
−9
−8
−7
−6
100806040200−20−40
5.0
5.2
5.4
5.6
5.8
6.0
6.2
6.4
V
CC(on)
(V)
V
CC(off)
(V)
V
CC(inhibit)
(V)
IC1 (mA)
IC2 (mA)
V
CC(bias)
(V)
120 120
120 120
−0.50
120 120

NCP1339EDR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers HIGH VOLTAGE QUASI RES CONTROLLER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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