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ADRF5160BCPZ

P1-P3P4-P6P7-P9P10-P12
High Power, 88 W Peak, Silicon SPDT,
Reflective Switch, 0.7 GHz to 4.0 GHz
Data Sheet
ADRF5160
Rev. 0 Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Reflective, 50 Ω design
Low insertion loss: 0.7 dB typical to 2.0 GHz
High power handling at T
CASE
= 105°C
Long-term (>10 years) average
CW power: 43 dBm
Peak power: 49 dBm
LTE average power (8 dB PAR): 41 dBm
Single event (<10 sec) average
LTE average power (8 dB PAR): 44 dBm
High linearity
P0.1dB: 47 dBm typical
IP3: 70 dBm typical
ESD ratings
HBM: 4 kV, Class 3A
CDM: 1.25 kV
Single positive supply: 5 V
Positive control, CMOS/TTL compatible
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Wireless infrastructure
Military and high reliability applications
Test equipment
Pin diode replacement
FUNCTIONAL BLOCK DIAGRAM
ADRF5160
PACKAGE
BASE
GND
GNDRFC
RF2RF1
16518-001
V
DD
V
CTL
Figure 1.
GENERAL DESCRIPTION
The ADRF5160 is a silicon-based, high power, 0.7 GHz to
4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective
switch in a leadless, surface-mount package. The switch is ideal
for high power and cellular infrastructure applications, such as
long-term evolution (LTE) base stations. The ADRF5160 has
high power handling of 41 dBm (8 dB PAR LTE, long-term
(>10 years) average typical), a low insertion loss of 0.7 dB typical
to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm
(typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm.
On-chip circuitry operates at a single positive supply voltage of
5 V at a typical supply current of 1.1 mA, making the ADRF5160
an ideal alternative to pin diode-based switches.
The ADRF5160 comes in an RoHS compliant, compact, 32-lead,
5 mm × 5 mm LFCSP.
ADRF5160 Data Sheet
Rev. 0 | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics .....................................................................5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................8
Applications Information .................................................................9
Evaluation Board ...........................................................................9
Typical Application Circuit ....................................................... 10
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
5/2018—Revision 0: Initial Version
Data Sheet ADRF5160
Rev. 0 | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V, V
CTL
= 0 V/V
DD
, T
A
= 25°C, and the device is a 50 Ω system, unless otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 0.7 4.0 GHz
INSERTION LOSS 0.7 GHz to 2.0 GHz 0.7 dB
2.0 GHz to 3.5 GHz 0.8 1.0
1
dB
3.5 GHz to 4.0 GHz 0.9 dB
ISOLATION
RFC to RF1 and RF2 (Worst Case)
0.7 GHz to 2.0 GHz
dB
2.0 GHz to 4.0 GHz 45 dB
RF1 to RF2 0.7 GHz to 2.0 GHz 51 dB
2.0 GHz to 4.0 GHz 35 dB
RETURN LOSS
RFC 0.7 GHz to 2.0 GHz 20 dB
2.0 GHz to 4.0 GHz 19 dB
RF1 and RF2 (On State) 0.7 GHz to 2.0 GHz 19 dB
2.0 GHz to 4.0 GHz 18 dB
SWITCHING CHARACTERISTICS
Rise and Fall Time (t
RISE
, t
FALL
) 10%/90% radio frequency output (RF
OUT
) 0.27 µs
On and Off Time (t
ON
, t
OFF
) 50% V
CTL
to 10%/90% RF
OUT
1.2 µs
INPUT LINEARITY
0.1 dB Compression (P0.1dB) 47 dBm
Third-Order Intercept (IP3) Two-tone input power = 30 dBm per tone at 1 MHz tone spacing
0.7 GHz to 2.0 GHz 72 dBm
2.0 GHz to 4.0 GHz 70 dBm
SUPPLY CURRENT 1.1 mA
DIGITAL CONTROL INPUT V
DD
= 4.5 V to 5.4 V, T
CASE
= −40°C to +105°C
Low Voltage 0 0.8 V
High Voltage 1.3 5 V
Low and High Current <1 µA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage Range (V
DD
) 4.5 5.4 V
Control Voltage Range (V
CTL
) 0 V
DD
V
RF Input Power
Case Temperature (T
CASE
) = 105°C
2
Continuous wave (CW) 43 dBm
8 dB peak average ratio (PAR) LTE , long-term (>10 years) average 41 dBm
8 dB PAR LTE, single event (<10 sec) average 44 dBm
T
CASE
= 85°C
CW
45
dBm
8 dB PAR LTE, long-term (>10 years) average 41 dBm
8 dB PAR LTE, single event (<10 sec) average 44 dBm
T
CASE
= 25°C CW 47.5 dBm
8 dB PAR LTE, long-term (>10 years) average 41 dBm
8 dB PAR LTE, single event (<10 sec) average 44 dBm
T
CASE
= −40°C CW 49 dBm
8 dB PAR LTE, long-term (>10 years) average 41 dBm
8 dB PAR LTE, single event (<10 sec) average 44 dBm
T
CASE
Range −40 +105 °C
1
Guaranteed by design for device to device and over operating temperature variation.
2
Peak power is 49 dBm, which corresponds to a PAR of 8 dB at LTE long-term.
P1-P3P4-P6P7-P9P10-P12

ADRF5160BCPZ

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Manufacturer:
Analog Devices Inc.
Description:
RF Switch ICs Low insertion loss,SPDT,3.5GHz,40W avg
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New from this manufacturer.
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