MT41J512M8THD-187E:D

Products and specifications discussed herein are subject to change by Micron without notice.
4Gb: x4, x8 TwinDie DDR3 SDRAM
Functionality
PDF: 09005aef83188bab/Source: 09005aef83169de6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
1 ©2008 Micron Technology, Inc. All rights reserved.
TwinDie
TM
DDR3 SDRAM
MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks
MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks
For component data sheets, refer to Micron’s Web site: www.micron.com
Functionality
The 4Gb TwinDie DDR3 SDRAM uses Microns 2Gb
DDR3 die and has similar functionality. This data sheet
includes key timing parameters, ball assignments, a
functional description, functional block diagrams,
IDD specifications, and package dimensions. Refer to
Microns 2Gb DDR3 SDRAM data sheet for complete
specifications. (Specifications for base part number
MT41J512M4 correlate to TwinDie manufacturing part
number MT41J1G4; specifications for base part num-
ber MT41J256M8 correlate to TwinDie manufacturing
part number MT41J512M8.)
Features
Uses 2Gb Micron die
Two ranks (includes dual CS#, ODT, CKE, and
ZQ balls)
Each rank has 8 internal banks
•V
DD
= V
DDQ
= +1.5V ±0.075V
1.5V center-terminated push/pull I/O
JEDEC-standard ball-out
•Low-profile package
•T
C
of 0°C to 95°C
0°C to 85°C: 8192 refresh cycles in 64ms
85°C to 95°C: 8192 refresh cycles in 32ms
Notes: 1. CL = CAS (READ) latency.
Options Marking
Configuration
64 Meg x 4 x 8 banks x 2 ranks 1G4
32 Meg x 8 x 8 banks x 2 ranks 512M8
FBGA package (lead-free)
82-ball FBGA (12.5 x 15 x 1.35mm)
Rev. A
THU
78-ball FBGA (9 x 11.5 x 1.2mm)
Rev. D
THD
Timing – cycle time
1
1.5ns @ CL = 10 (DDR3-1333) -15
1.5ns @ CL = 9 (DDR3-1333) -15E
1.87ns @ CL = 8 (DDR3-1066) -187
1.87ns @ CL = 7 (DDR3-1066) -187E
2.5ns @ CL = 6 (DDR3-800) -25
2.5ns @ CL = 5 (DDR3-800) -25E
Self refresh
Standard None
Operating temperature
Commercial (0°C
T
C
95°C
)
None
Revision (82-ball FBGA) :A
Revision (78-ball FBGA) :D
Table 1: Key Timing Parameters
Speed Grade Data Rate (MT/s) Target
t
RCD-
t
RP-CL
t
RCD (ns)
t
RP (ns) CL (ns)
-15 1333 10-10-10 15 15 15
-15E 1333 9-9-9 13.5 13.5 13.5
-187 1066 8-8-8 15 15 15
-187E 1066 7-7-7 13.1 13.1 13.1
-25 800 6-6-6 15 15 15
-25E 800 5-5-5 12.5 12.5 12.5
PDF: 09005aef83188bab/Source: 09005aef83169de6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
2 ©2008 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8 TwinDie DDR3 SDRAM
Features
Table 2: Addressing
Parameter 1024 Meg x 4 512 Meg x 8
Configuration
64 Meg x 4 x 8 banks x 2 ranks 32 Meg x 8 x 8 banks x 2 ranks
Refresh count
8K 8K
Row address
32K A[14:0] 32K A[14:0]
Bank address
8 BA[2:0] 8 BA[2:0]
Column address
2K A[11, 9:0] 1K A[9:0]
PDF: 09005aef83188bab/Source: 09005aef83169de6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
3 ©2008 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8 TwinDie DDR3 SDRAM
Ball Assignments and Descriptions
Ball Assignments and Descriptions
Figure 1: 82-Ball FBGA Ball Assignments – Rev. A (Top View)
Notes: 1. Balls with black dots are incremental to balls on the monolithic die.
6 753
V
DD
V
SSQ
DQ2
NF, DQ6
V
DDQ
V
SS
V
DD
CS0#
BA0
A3
A5
A7
RESET#
4
NC
DQ0
DQS
DQS#
NF, DQ4
RAS#
CAS#
WE#
BA2
A0
A2
A9
A13
8
NF, NF/TDQS#
DM, DM/TDQS
DQ1
V
DD
NF, DQ7
CK
CK#
A10/AP
NC
A12/BC#
A1
A11
A14
9
V
SS
V
SSQ
DQ3
V
SS
NF, DQ5
V
SS
V
DD
ZQ0
V
REFCA
BA1
A4
A6
A8
10
V
DD
V
DDQ
V
SSQ
V
SSQ
V
DDQ
CKE1
CKE0
ZQ1
V
SS
V
DD
V
SS
V
DD
V
SS
2
V
SS
V
SS
V
DDQ
V
SSQ
V
REFDQ
ODT1
ODT0
CS1#
V
SS
V
DD
V
SS
V
DD
V
SS
1
NC
NC
11
NC
NC
A
B
C
D
E
F
G
H
J
K
L
M
N

MT41J512M8THD-187E:D

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 4G PARALLEL 78FBGA
Lifecycle:
New from this manufacturer.
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