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MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
10 ©2008 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8 TwinDie DDR3 SDRAM
Electrical Specifications
Notes: 1. MAX operating case temperature. T
C
is measured in the center of the package
(see Figure 5).
2. A thermal solution must be designed to ensure the DRAM device does not exceed the max-
imum T
C
during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
C
during
operation.
4. If T
C
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh
(ASR), if available, must be enabled.
Notes: 1. Thermal resistance data is based upon a number of samples from multiple lots and should
be viewed as a typical number.
Figure 5: Temperature Test Point Location
Table 5: Thermal Characteristics
Parameter/Condition Symbol Value Units Notes
Operating case temperature
T
C
0 to 85 °C 1, 2, 3
0 to 95 °C 1, 2, 3, 4
Table 6: Thermal Impedance
Die Rev Package Substrate
θJA (°C/W)
Airflow =
0m/s
θJA (°C/W)
Airflow =
1m/s
θJA (°C/W)
Airflow =
2m/s θJB (°C/W) θJC (°C/W) Notes
A 82-ball 2-layer 46.0 33.9 28.1 25.6 1.73 1
4-layer 34.2 27.1 23.6 23.2
D 78-ball 2-layer 61.0 43.7 37.3 27.1 2.8 1
4-layer 44.5 35.3 31.5 23.2
Test point
Length (L)
Width (W)
0.5 (W)
0.5 (L)
