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MT41J1G4_64M_32M_twindie.fm - Rev. F 11/09 EN
9 ©2008 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8 TwinDie DDR3 SDRAM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
outside those indicated in the device data sheet is not implied. Exposure to absolute
maximum rating conditions for extended periods may adversely affect reliability.
Notes: 1. V
DD
and V
DDQ
must be within 300mV of each other at all times, and V
REF
must not be
greater than 0.6 × V
DDQ
. When V
DD
and V
DDQ
are less than 500mV, V
REF
may be ≤300mV.
2. The minimum limit requirement is for testing purposes. The leakage current on the V
REF
pin should be minimal.
3. MAX operating case temperature. T
C
is measured in the center of the package (see
Figure 5 on page 10).
4. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
C
dur-
ing operation.
Temperature and Thermal Impedance
It is imperative that the DDR3 SDRAM device’s temperature specifications, shown in
Table 5 on page 10, be maintained to ensure the junction temperature is in the proper
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly. Ther-
mal impedances listed in Table 6 on page 10 apply to the current die revision and pack-
ages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08: “Thermal Applications,” prior to using the thermal impedances in
Table 6. For designs that are expected to last several years and require the flexibility to
use several DRAM die shrinks, consider using final target theta values (rather than exist-
ing values) to account for increased thermal impedances from the reduction in die size.
The DDR3 SDRAM device’s safe junction temperature range can be maintained when
the T
C
specification is not exceeded. In applications where the device’s ambient temper-
ature is too high, use of forced air and/or heat sinks may be required to satisfy the case
temperature specifications.
Table 4: Absolute Maximum Ratings
Symbol Parameter Min Max Units Notes
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V 1
V
DDQ
V
DD
supply voltage relative to V
SSQ
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any ball relative to V
SS
–0.4 1.975 V
I
I
Input leakage current
Any input 0V ≤ V
IN
≤ V
DD
,
V
REF
pin 0V ≤ V
IN
≤ 1.1V
(All other pins not under test = 0V)
–4 +4 µA
I
VREF
V
REF
supply leakage current
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–2 +2 µA 2
T
C
Operating case temperature
095°C3, 4
T
STG
Storage temperature
–55 150 °C
