www.irf.com 1
10/05/05
IRF6609
HEXFET
®
Power MOSFET
Notes through are on page 10
l Low Conduction Losses
l Low Switching Losses
l Ideal Synchronous Rectifier MOSFET
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
Description
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
V
DSS
R
DS(on)
max
Qg
20V
2.0mΩ@V
GS
= 10V
46nC
2.6mΩ@V
GS
= 4.5V
DirectFET ISOMETRIC
MT
SQ SX ST MQ MX MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient
––– 45
R
θ
JA
Junction-to-Ambient
12.5 –––
R
θ
JA
Junction-to-Ambient
20 ––– °C/W
R
θ
JC
Junction-to-Case
––– 1.4
R
θ
J-PCB
Junction-to-PCB Mounted 1.0 –––
-40 to + 150
89
0.022
1.8
2.8
Max.
31
25
250
±20
20
150
PD - 95822B
