IRF6609
www.irf.com 7
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
Fig 14. On-Resistance Vs. Gate Voltage
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
11A
14A
BOTTOM
25A
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
0
2
4
6
8
10
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
T
J
= 25°C
T
J
= 125°C
I
D
= 31A
IRF6609
8 www.irf.com
DirectFET Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Fig 19. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
G = GATE
D = DRAIN
S = SOURCE
G
D
DD
D
S
S
IRF6609
www.irf.com 9
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET Part Marking
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
MIN
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.59
0.03
0.08
MAX
6.35
5.05
3.95
0.45
0.82
0.92
1.82
1.02
0.67
1.01
2.63
0.70
0.08
0.17
MIN
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.023
0.001
0.003
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
DIMENSIONS
METRIC
IMPERIAL

IRF6609

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 20V 31A DIRECTFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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