IRF6609 Datasheet IRF6609TR1, IRF6609 | P4-P6

IRF6609

4 www.irf.com

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

1 10 100

V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 20 40 60 80 100 120

Q

G

Total Gate Charge (nC)

0

2

4

6

8

10

12

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 20V

VDS= 10V

I

D

= 17A

0.0 0.4 0.8 1.2 1.6 2.0

V

SD

, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

I

S

D

,

R

e

v

e

r

s

e

D

r

a

i

n

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

GS

= 0V

0 1 10 100

V

DS

, Drain-toSource Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

100µsec

IRF6609

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs.

Case Temperature

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t

1

, Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

10

100

T

h

e

r

m

a

l

R

e

s

p

o

n

s

e

(

Z

t

h

J

A

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci i/Ri

Ci= τi/Ri

τ

C

τ

4

τ

4

R

4

R

4

Ri (°C/W) τi (sec)

0.6784 0.00086

17.299 0.57756

17.566 8.94

9.4701 106

-75 -50 -25 0 25 50 75 100 125 150

T

J

, Temperature ( °C )

1.0

1.5

2.0

2.5

V

G

S

(

t

h

)

G

a

t

e

t

h

r

e

s

h

o

l

d

V

o

l

t

a

g

e

(

V

)

I

D

= 250µA

25 50 75 100 125 150

T

J

, Junction Temperature (°C)

0

30

60

90

120

150

I

D

,

D

r

a

i

n

C

u

r

e

n

t

(

A

)

IRF6609

6 www.irf.com

Fig 12. Typical Avalanche Current vs.Pulsewidth

Fig 13. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 12, 13:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

jmax

. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 16a, 16b.

4. P

D (ave)

= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

av

= Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

T

jmax

(assumed as 25°C in Figure 12, 13).

t

av =

Average time in avalanche.

D = Duty cycle in avalanche = t

av

·f

Z

thJC

(D, t

av

) = Transient thermal resistance, see figure 11)

P

D (ave)

= 1/2 ( 1.3·BV·I

av

) = DT/ Z

thJC

I

av

=

2DT/ [1.3·BV·Z

th

]

E

AS (AR)

= P

D (ave)

·t

av

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01

tav (sec)

0.01

0.1

1

10

100

1000

10000

A

v

a

l

a

n

c

h

e

C

u

r

e

n

t

(

A

)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming

∆

Tj = 25°C due to

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.01

25 50 75 100 125 150

Starting T

J

, Junction Temperature (°C)

0

50

100

150

200

250

E

A

R

,

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

Single Pulse

I

D

= 25A

IRF6609

IRF6609

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