DDR2 SDRAM SODIMM
MT16HTF12864HZ – 1GB
MT16HTF25664HZ – 2GB
MT16HTF51264HZ – 4GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 1GB (128 Meg x 64), 2GB (256 Meg x 64) or 4GB (512
Meg x 64)
• V
DD
= V
DDQ
= 1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Halogen-free
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module Height: 30mm (1.181 in.)
Options Marking
• Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
I
• Package
– 200-pin DIMM (halogen-free) Z
• Frequency/CL
2
– 1.87ns @ CL = 7 (DDR2-1066) -1GA
– 2.5ns @ CL = 5 (DDR2-800) -80E
– 2.5ns @ CL = 6 (DDR2-800) -800
– 3ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 7 CL = 6 CL = 5 CL = 4 CL = 3
-1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125
-80E PC2-6400 800 800 533 400 12.5 12.5 57.5
-800 PC2-6400 800 667 533 400 15 15 60
-667 PC2-5300 – 667 553 400 15 15 60
-53E PC2-4200 – – 553 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Features
PDF: 09005aef8339ef97
htf16c128_256_512x64hz.pdf - Rev. D 4/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.