Table 15: SPD EEPROM AC Operating Conditions (Continued)
Parameter/Condition Symbol Min Max Units Notes
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F 300 ns 2
SDA and SCL rise time
t
R 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I 50 ns
Clock LOW period
t
LOW 1.3 µs
SCL clock frequency
t
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
Notes:
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1
and the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a
write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the
WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to
pull-up resistance, and the EEPROM does not respond to its slave address.
1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Serial Presence-Detect
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htf16c128_256_512x64hz.pdf - Rev. D 4/14 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Module Dimensions – 1GB, 2GB
Figure 4: 200-Pin DDR2 SODIMM – 1GB, 2GB
U1 U2
U3
U4 U5
U6 U7 U8 U9
U10 U11 U13 U14
U15 U16 U17 U18
3.8 (0.15)
MAX
Pin 1
67.75 (2.67)
67.45 (2.65)
20.0 (0.787)
TYP
1.80 (0.071)
(2X)
0.6 (0.024)
TYP
0.45 (0.018)
TYP
2.0 (0.079) R
(2X)
Pin 199
Pin 200
Pin 2
Front view
2.0 (0.079)
TYP
6.0 (0.236)
TYP
63.6 (2.504)
TYP
0.5 (0.0197) R
29.85 (1.175)
30.15 (1.187)
Back view
1.1 (0.043)
0.9 (0.035)
47.4 (1.87)
TYP
11.4 (0.45)
TYP
4.2 (0.165)
TYP
16.25 (0.64)
TYP
3.5 (0.138)
TYP
Notes:
1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for ad-
ditional design dimensions.
1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Module Dimensions – 1GB, 2GB
PDF: 09005aef8339ef97
htf16c128_256_512x64hz.pdf - Rev. D 4/14 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Module Dimensions – 4GB
Figure 5: 200-Pin DDR2 SODIMM – 4GB
3.8 (0.15)
MAX
Pin 1
67.75 (2.67)
67.45 (2.65)
20.0 (0.787)
TYP
1.80 (0.071)
(2X)
0.6 (0.024)
TYP
0.45 (0.018)
TYP
2.0 (0.079) R
(2X)
Pin 199
Pin 200
Pin 2
Front view
2.0 (0.079)
TYP
6.0 (0.236)
TYP
63.6 (2.504)
TYP
0.5 (0.0197) R
29.85 (1.175)
30.15 (1.187)
Back view
1.1 (0.043)
0.9 (0.035)
47.4 (1.87)
TYP
11.4 (0.45)
TYP
4.2 (0.165)
TYP
16.25 (0.64)
TYP
3.5 (0.138)
TYP
U1 U2
U7 U8
U4
U5 U6
U9 U10
U11 U12
U15 U16
U13 U14
U17 U18
45° 4X
Notes:
1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for ad-
ditional design dimensions.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Module Dimensions – 4GB
PDF: 09005aef8339ef97
htf16c128_256_512x64hz.pdf - Rev. D 4/14 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.

MT16HTF25664HZ-800M1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR2 2GB SODIMM
Lifecycle:
New from this manufacturer.
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