6.42
IDT71V321S/L
High Speed 3.3V 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges
4
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,2)
(VCC = 3.3V ± 0.3V)
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
2. VCC = 3.3V, TA = +25°C, and are not production tested. ICCDC = 70mA (Typ.).
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC and using "AC Test Conditions" of input levels
of GND to 3V.
4. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
5. Port "A" may be either left or right port. Port "B" is opposite from port "A".
Symbol Parameter Test Condition Version
71V321X25
Com'l & Ind
71V321X35
Com'l & Ind
71V321X55
Com'l & Ind
Unit
Typ.
Max. Typ. Max. Typ. Max.
I
CC
Dynamic Operating
Current
(Both Ports Active)
CE = V
IL
, Outputs Disabled
SEM = V
IH
f = f
MAX
(3)
COM'L S
L
55
55
130
100
55
55
125
95
55
55
115
85
mA
IND L 55 130 55 125 55 115
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
R
= CE
L
= V
IH
SEM
R
= SEM
L
= V
IH
f = f
MAX
(3)
COM'L S
L
15
15
35
20
15
15
35
20
15
15
35
20
mA
IND L 15 35 15 35 15 35
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
= SEM
L
= V
IH
COM'L S
L
25
25
75
55
25
25
70
50
25
25
60
40
mA
IND L 25 75 25 70 25 60
I
SB3
Full Standby Current
(Both Ports - All
CMOS Level Inputs)
Both Ports CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
= SEM
L
> V
CC
- 0.2V
COM'L S
L
1.0
0.2
5
3
1.0
0.2
5
3
1.0
0.2
5
3
mA
IND L 0.2 6 1.0 5 1.0 5
I
SB4
Full Standby Current
(One Port - All
CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
= SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled
f = f
MAX
(3)
COM'L S
L
25
25
70
55
25
25
65
50
25
25
55
40
mA
IND L 25 70 25 65 25 55
3026 tbl 06
Data Retention Characteristics (L Version Only)
Symbol Parameter Test Condition Min. Typ.
(1)
Max. Unit
V
DR
V
CC
for Data Retention 2.0
___
0V
I
CCDR
Data Retention Current
V
CC
= 2
V,
CE > V
CC
- 0.2V COM'L.
___
100 500
µA
t
CDR
(3)
Chip Deselect to Data
Retention Time
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V IND.
___
100 1000 µA
0
___ ___
V
t
R
(3)
Operation Recovery Time t
RC
(2)
___ ___
V
3026 tbl 07
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization but not production tested.
