4
Pin Descriptions
PWRGD (ISL6142; L Version) Pin 1 - This digital output is
an open-drain pull-down device and can be used to directly
enable an external module. During start-up the DRAIN and
GATE voltages are monitored with two separate comparators.
The first comparator looks at the DRAIN pin voltage compared
to the internal V
PG
reference (1.3V); this measures the
voltage drop across the external FET and sense resistor.
When the DRAIN to V
EE
voltage drop is less than 1.3V, the
first of two conditions required for the power to be considered
good are met. In addition, the GATE voltage monitored by the
second comparator must be within approximately 2.5V of its
normal operating voltage (13.6V). When both criteria are met
the PWRGD
output will transition low and be latched in the
active state, enabling the external module. When this occurs
the two comparators discussed above no longer control the
output. However a third comparator continues to monitor the
DRAIN voltage, and will drive the PWRGD
output inactive if
the DRAIN voltage raises more than 8V above V
EE
. In
addition, any of the signals that shut off the GATE (Over-
Voltage, Under-Voltage, Under-Voltage Lock-Out, Over-
Current time-out, pulling the DIS pin high, or powering down)
will reset the latch and drive the PWRGD
output high to
disable the module. In this case, the output pull-down device
shuts off, and the pin becomes high impedance. Typically an
external pull-up of some kind is used to pull the pin high
(many brick regulators have a pull-up function built in).
PWRGD (ISL6152; H Version) Pin 1 - This digital output is
used to provide an active high signal to enable an external
module. The Power Good comparators are the same as
described above, but the active state of the output is
reversed (reference figure 37).
When power is considered good (both DRAIN and GATE are
normal) the output is latched in the active high state, the
DMOS device (Q3) turns on and sinks current to V
EE
through
a 6.2K resistor. The base of Q2 is clamped to V
EE
to turn it
off. If the external pull-up current is high enough (>1mA, for
example), the voltage drop across the resistor will be large
enough to produce a logic high output and enable the external
module (in this example, 1mA x 6.2K = 6.2V).
Note that for all H versions, although this is a digital pin
functionally, the logic high level is determined by the external
pull-up device, and the power supply to which it is
connected; the IC will not clamp it below the V
DD
voltage.
Therefore, if the external device does not have its own
clamp, or if it would be damaged by a high voltage, an
external clamp might be necessary.
If the power good latch is reset (GATE turns off), the internal
DMOS device (Q3) is turned off, and Q2 (NPN) turns on to
clamp the output one diode drop above the DRAIN voltage
to produce a logic low, indicating power is no longer good.
FAULT
Pin 2- This digital output is an open-drain, pull-down
device, referenced to V
EE
. It is pulled active low whenever
the Over-Current latch is set. It goes to a high impedance
state when the fault latch is reset by toggling the UV or DIS
pins. An external pull-up resistor to a logic supply (5V or
less) is required; the fault outputs of multiple IC’s can be
wire-OR’d together. If the pin is not used it should be left
open.
DIS Pin 3 - This digital input disables the FET when driven to
a logic high state. It has a weak internal pull-up device to an
internal 5V rail (10A), so an open pin will also act as a logic
high. The input has a nominal trip point of 1.6 V while rising,
and a hysteresis of 1.0V. The threshold voltage is referenced
to V
EE
, and is compatible with CMOS logic levels. A logic
low will allow the GATE to turn on (assuming the 4 other
conditions described in the GATE section are also true). The
DIS pin can also be used to reset the Over-Current latch
when toggled high to low. If not used the pin should be tied
to the negative supply rail (-V
IN
).
OV (Over-Voltage) Pin 4 - This analog input compares the
voltage on the pin to an internal voltage reference of 1.255 V
(nominal). When the input goes above the reference the
GATE pin is immediately pulled low to shut off the external
FET. The built in 25mV hysteresis will keep the GATE off
until the OV pin drops below 1.230V (the nominal high to low
threshold). A typical application will use an external resistor
divider from V
DD
to -V
IN
to set the OV trip level. A three-
resistor divider can be used to set both OV and UV trip
points to reduce component count.
UV (Under-Voltage) Pin 5 - This analog input compares the
voltage on the pin to an internal comparator with a built in
hysteresis of 135mv. When the UV input goes below the
nominal reference voltage of 1.120V, the GATE pin is
immediately pulled low to shut off the external FET. The
GATE will remain off until the UV pin rises above a 1.255V
low to high threshold. A typical application will use an
external resistor divider from V
DD
to -V
IN
to set the UV level
as desired. A three-resistor divider can be used to set both
OV and UV trip points to reduce component count.
The UV pin is also used to reset the Over-Current latch. The
pin must be cycled below 1.120V (nominal) and then above
1.255V (nominal) to clear the latch and initiate a normal
start-up sequence.
IS- Pin 6 - This analog pin is the negative input of the current
sense circuit. A sensing resistor (R7) is connected between
this pin and the V
EE
side of resistor R1. The ratio of R1/R7
defines the I
SENSE
to IS
OUT
current scaling factor. If current
sensing is not used in the application, the IS- pin should be
tied directly to the IS+ pin and the node should be left
floating.
ISL6142, ISL6152
5
V
EE
Pin 7 - This is the most Negative Supply Voltage, such
as in a -48V system. Most of the other signals are
referenced relative to this pin, even though it may be far
away from what is considered a GND reference.
SENSE Pin 8 - This analog input monitors the voltage drop
across the external sense resistor to determine if the current
flowing through it exceeds the programmed Over-Current
trip point (50mV / Rsense). If the Over-Current threshold is
exceeded, the circuit will regulate the current to maintain a
nominal voltage drop of 50mV across the R1 sense resistor,
also referred to as Rsense. If current is limited for more than
the programmed time-out period the IntelliTrip
TM
electronic
circuit breaker will trip and turn off the FET.
A second comparator is employed to detect and respond
quickly to hard faults. The threshold of this comparator is set
approximately four times higher (210mV) than the Over-
Current trip point. When the hard fault comparator threshold
is exceeded the GATE is immediately (10s typical) shut off
(V
GATE
= V
EE
), the timer is reset, and a single retry (soft
start) is initiated.
IS+ Pin 9 - This analog pin is the positive input of the current
sense circuit. A sensing resistor (R8) is connected between
this pin and the output side of R1, which is also connected to
the SENSE pin. It should match the IS- resistor (R7) as
closely as possible (1%) to minimize output current error
(IS
OUT
). If current sensing is not used in the application, the
IS+ pin should be tied directly to the IS- pin and the node
should be left floating.
GATE Pin 10 - This analog output drives the gate of the
external FET used as a pass transistor. The GATE pin is
high (FET is on) when the following conditions are met:
•V
DD
UVLO is above its trip point (~16.5V)
Voltage on the UV pin is above its trip point (1.255V)
Voltage on the OV pin is below its trip point (1.255V)
No Over-Current conditions are present.
The Disable pin is low.
If any of the 5 conditions are violated, the GATE pin will be
pulled low to shut off or regulate current through the FET.
The GATE is latched off only when an Over-Current event
exceeds the programmed time-out period.
The GATE is driven high by a weak (-50A nominal) pull-up
current source, in order to slowly turn on the FET. It is driven
low by a 70mA (nominal) pull-down device for three of the
above shut-off conditions. A larger (350mA nominal) pull-
down current shuts off the FET very quickly in the event of a
hard fault where the sense pin voltage exceeds
approximately 210mV.
DRAIN Pin 11 - This analog input monitors the voltage of the
FET drain for the Power Good function. The DRAIN input is
tied to two comparators with internal reference voltages of
1.3v and 8.0V. At initial start-up the DRAIN to V
EE
voltage
differential must be less than 1.3V, and the GATE voltage
must be within 2.5V of its normal operating voltage (13.6V)
for power to be considered good. When both conditions are
met, the PWRGD
/PWRGD output is latched into the active
state. At this point only the 8V DRAIN comparator can
control the PWRGD
/PWRGD output, and will drive it inactive
if the DRAIN voltage exceeds V
EE
by more than 8.0V.
IS
OUT
Pin 12 - This analog pin is the output of the current
sense circuit. The current flowing out of this pin (IS
OUT
) is
proportional to the current flowing through the R1 sense
resistor (I
SENSE
). The scaling factor, IS
OUT
/I
SENSE
is
defined by the resistor ratio of R1/R7. Current to voltage
conversion is accomplished by placing a resistor from this
pin to -V
IN
. The current flowing out of the pin is supplied by
the internal 13V regulator and should not exceed 600A.
The output voltage will clamp at approximately 8V. If current
sensing is not used in the application the pin should be left
open.
CT Pin 13 - This analog I/O pin is used to program the Over-
Current Time-Out period with a capacitor connected to the
negative supply rail (-V
IN
which is equal to V
EE
). During
normal operation, the pin is pulled down to V
EE
. During
current limiting, the capacitor is charged with a 20A
(nominal) current source. When the CT pin charges to 8.5V,
it times out and the GATE is latched off. If the short circuit
goes away prior to the time-out, the GATE will remain on. If
no capacitor is connected, the time-out will be much quicker,
with only the package pin capacitance (~ 5 to 10 pF) to
charge. If no external capacitor is connected to the CT pin
the time-out will occur in a few sec. To set the desired time-
out period use:
dt = (C * dV) / I = (C * 8.5) / 20 A = 0.425*10
6
* C
NOTE: The printed circuit board’s parasitic capacitance (CT pin to
the negative input, -V
IN
) should be taken into consideration when
calculating the value of C3 needed for the desired time-out.
V
DD
Pin 14 - This is the most positive Power Supply pin. It
can range from the Under-Voltage lockout threshold (16.5V)
to +80V (Relative to V
EE
). The pin can tolerate up to 100V
without damage to the IC.
ISL6142, ISL6152
6
.
Absolute Maximum Ratings Thermal Information
Supply Voltage (V
DD
to V
EE
). . . . . . . . . . . . . . . . . . . . -0.3V to 100V
DRAIN, PWRGD
, PWRGD Voltage . . . . . . . . . . . . . . . -0.3V to 100V
UV, OV Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 60V
SENSE, GATE Voltage . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 20V
FAULT
, DIS, IS+, IS-, IS
OUT
, CT . . . . . . . . . . . . . . . . . -0.3V to 8.0V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7) . . .2000V
Operating Conditions
Temperature Range (Industrial) . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
Temperature Range (Commercial). . . . . . . . . . . . . . . . . 0
o
C to 70
o
C
Supply Voltage Range (Typical). . . . . . . . . . . . . . . . . . . 36V to 72V
Thermal Resistance (Typical, Note 1)
JA
(
o
C/W)
14 Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. PWRGD is referenced to DRAIN; V
PWRGD
-V
DRAIN
= 0V.
Electrical Specifications V
DD
= +48V, V
EE
= +0V Unless Otherwise Specified. All tests are over the full temperature range; either
Commercial (0
o
C to 70
o
C) or Industrial (-40
o
C to 85
o
C). Typical specs are at 25
o
C.
PARAMETER SYMBOL
TEST CONDITIONS MIN TYP MAX UNITS
DC PARAMETRIC
V
DD
PIN
Supply Operating Range V
DD
20 - 80 V
Supply Current I
DD
UV = 3V; OV = V
EE
; SENSE = V
EE
; V
DD
=
80V
2.6 4.0 mA
UVLO High V
UVLOH
V
DD
Low to High transition 15 16.7 19 V
UVLO Low V
UVLOL
V
DD
High to Low transition 13 15.0 17 V
UVLO hysteresis 1.9 V
GATE PIN
GATE Pin Pull-Up Current I
PU
GATE Drive on, V
GATE =
V
EE
-30 -50 -60 A
GATE Pin Pull-Down Current I
PD1
GATE Drive off, UV or OV false 70 mA
GATE Pin Pull-Down Current I
PD2
GATE Drive off, Over-Current Time-Out 70 mA
GATE Pin Pull-Down Current I
PD3
GATE Drive off; Hard Fault, Vsense > 210mv 350 mA
External Gate Drive (at 20V, at 80V) V
GATE
(V
GATE -
V
EE)
, 20V <=V
DD
<=80V 12 13.6 15 V
GATE High Threshold (PWRGD
/PWRGD active) V
GH
V
GATE
- V
GATE
2.5 V
SENSE PIN
Current Limit Trip Voltage V
CL
V
CL
= (V
SENSE
- V
EE
) 405060mV
Hard Fault Trip Voltage HFTV HFTV = (V
SENSE
- V
EE
) 210 mV
SENSE Pin Current I
SENSE
V
SENSE
= 50mV - 0 -0.5 A
UV PIN
UV Pin High Threshold Voltage V
UVH
UV Low to High Transition 1.240 1.255 1.270 V
UV Pin Low Threshold Voltage V
UVL
UV High to Low Transition 1.105 1.120 1.145 V
UV Pin Hysteresis V
UVHY
135 mV
ISL6142, ISL6152

ISL6142IBZA-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Hot Swap Voltage Controllers W/ANNEAL 14LD -40+85 WSIDE HOTPLUG CONTRO
Lifecycle:
New from this manufacturer.
Delivery:
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