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PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
14 January 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
NPN/PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.
2. Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CEO
collector-emitter
voltage
open base - - 60 V
I
C
collector current - - 1 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - 1.5 A
TR1 (NPN)
R
CEsat
collector-emitter
saturation resistance
I
C
= 0.5 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - 240
NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 14 January 2013 2 / 21
Symbol Parameter Conditions Min Typ Max Unit
TR2 (PNP)
R
CEsat
collector-emitter
saturation resistance
I
C
= -0.5 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - 360
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Transparent top view
6
7 8
5 4
1 2 3
DFN2020-6 (SOT1118)
sym139
B1
E1
C2
B2C1
TR1
TR2
E2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS4160PANP DFN2020-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118
7. Marking
Table 4. Marking codes
Type number Marking code
PBSS4160PANP 2M
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 60 V

PBSS4160PANP,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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