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PBSS4160PANP,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
NXP Semiconductors
PBSS4160P
ANP
60 V
, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
14 January 2013
9 / 21
006aad171
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
10
2
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, mounting pad for collector 1 cm
2
Fig. 9.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
TR1 (NPN)
V
CB
= 48 V; I
E
= 0 A; T
amb
= 25 °C
-
-
100
nA
I
CBO
collector-base cut-off
current
V
CB
= 48 V; I
E
= 0 A; T
j
= 150 °C
-
-
50
µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
100
nA
V
CE
= 2 V; I
C
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
290
430
-
V
CE
= 2 V; I
C
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
150
220
-
h
FE
DC current gain
V
CE
= 2 V; I
C
= 1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
70
1
10
-
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C
-
90
120
mV
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
185
240
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
175
220
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 0.5 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
240
mΩ
NXP Semiconductors
PBSS4160P
ANP
60 V
, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
14 January 2013
10 / 21
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C
-
-
1
V
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
1.1
V
V
BEsat
base-emitter saturation
voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
1.1
V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
0.9
V
t
d
delay time
-
15
-
ns
t
r
rise time
-
90
-
ns
t
on
turn-on time
-
105
-
ns
t
s
storage time
-
410
-
ns
t
f
fall time
-
130
-
ns
t
off
turn-off time
V
CC
= 10 V; I
C
= 0.5 A; I
Bon
= 25 mA;
I
Boff
= -25 mA; T
amb
= 25 °C
-
540
-
ns
f
T
transition frequency
V
CE
= 10 V; I
C
= 50 mA; f = 100 MHz;
T
amb
= 25 °C
90
175
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
4
6
pF
TR2 (PNP)
V
CB
= -48 V; I
E
= 0 A
-
-
-100
nA
I
CBO
collector-base cut-off
current
V
CB
= -48 V; I
E
= 0 A; T
j
= 150 °C
-
-
-50
µA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A
-
-
-100
nA
V
CE
= -2 V; I
C
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
170
245
-
V
CE
= -2 V; I
C
= -500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
120
170
-
h
FE
DC current gain
V
CE
= -2 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
70
100
-
I
C
= -500 mA; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-125
-180
mV
I
C
= -1 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-390
-550
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-240
-340
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -0.5 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
360
mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= -500 mA; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
-1
V
NXP Semiconductors
PBSS4160P
ANP
60 V
, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
14 January 2013
11 / 21
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
C
= -1 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
-1
V
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
-1.1
V
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
-0.9
V
t
d
delay time
-
15
-
ns
t
r
rise time
-
40
-
ns
t
on
turn-on time
-
55
-
ns
t
s
storage time
-
95
-
ns
t
f
fall time
-
40
-
ns
t
off
turn-off time
V
CC
= -10 V; I
C
= -0.5 A; I
Bon
= -25 mA;
I
Boff
= 25 mA; T
amb
= 25 °C
-
135
-
ns
f
T
transition frequency
V
CE
= -10 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
65
125
-
MHz
C
c
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
9.5
13
pF
006aad204
400
200
600
800
h
FE
0
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10.
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
CE
(V)
0
5
4
2
3
1
006aad205
0.50
0.75
0.25
1.00
1.50
I
C
(A)
0
I
B
= 15 mA
13.5
12
10.5
9
7.5
6
4.5
3
1.5
T
amb
= 25 °C
Fig. 1
1.
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
P1-P3
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P13-P15
P16-P18
P19-P21
P22-P22
PBSS4160PANP,115
Mfr. #:
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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor
Lifecycle:
New from this manufacturer.
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