NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 14 January 2013 15 / 21
006aad218
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 24. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
006aad219
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 25. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 14 January 2013 16 / 21
11. Test information
Fig. 26. TR1 (NPN): BISS transistor switching time definition
Fig. 27. TR1 (NPN): Test circuit for switching times
NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 14 January 2013 17 / 21
Fig. 28. TR2 (PNP): BISS transistor switching time definition
Fig. 29. TR2 (PNP): Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

PBSS4160PANP,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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