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PBSS4160PANP,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
NXP Semiconductors
PBSS4160P
ANP
60 V
, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
14 January 2013
6 / 21
006aad167
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB 35 µm, mounting pad for collector 1 cm
2
Fig. 3.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad168
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 35 µm, standard footprint
Fig. 4.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NXP Semiconductors
PBSS4160P
ANP
60 V
, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
14 January 2013
7 / 21
006aad169
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 35 µm, mounting pad for collector 1 cm
2
Fig. 5.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac610
10
-
5
10
10
-
2
10
-
4
10
2
10
-
1
t
p
(s)
10
- 3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB 70 µm, standard footprint
Fig. 6.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NXP Semiconductors
PBSS4160P
ANP
60 V
, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4160PANP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
14 January 2013
8 / 21
006aac61
1
10
-
5
10
10
-
2
10
-
4
10
2
10
-
1
t
p
(s)
10
- 3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB 70 µm, mounting pad for collector 1 cm
2
Fig. 7.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aad170
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
4-layer PCB 70 µm, standard footprint
Fig. 8.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P22
PBSS4160PANP,115
Mfr. #:
Buy PBSS4160PANP,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor
Lifecycle:
New from this manufacturer.
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PBSS4160PANP,115