µ
PD70F3003A, 70F3025A, 70F3003A(A)
37
Data Sheet U13189EJ5V1DS
3.2 Flash Memory Programming Mode
Basic Characteristics (TA = 10 to 40°C (when rewriting), TA = –40 to +85°C (when not rewriting), VDD = AVDD
= 5 V ±10%, VSS = AVSS = 0 V))
(1)
µ
PD70F3003A (all ranks), 70F3025A (except K, E, P, X rank)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Operating frequency
φ
10 33 MHz
VPP supply voltage VPP1
During flash memory programming
9.7 10.3 10.6 V
VPPL VPP low-level detection –0.5 0.2VDD V
VPPM VPP, VDD level detection 0.8VDD 1.2VDD V
VPPH VPP high-voltage level detection 9.7 10.3 10.6 V
VDD supply current IDO VPP = VPP1
3.0 ×
φ
+ 25
mA
VPP supply current IPP VPP = 10.3 V 200 mA
Step erase time tER Note 1 0.2 s
Overall erase time per area tERA
When the step erase time = 0.2 s, Note 2
40 s/area
Write-back time tWB Note 3 5ms
Number of write-backs per CWB When the write-back time 50
Count/write-
write-back command = 5 ms, Note 4
back command
Number of erase/write-backs CERWB 16 Count
Step writing time tWT Note 5 50
µ
s
Overall writing time per word tWTW When the step writing time = 50 50 500
µ
s/word
µ
s (1 word = 4 bytes), Note 6
Number of rewrites per area CERWR 1 erase + 1 write after erase 20
Count/area
= 1 rewrite, Note 7
Notes 1. The recommended setting value of the step erase time is 0.2 s.
2. The prewrite time prior to erasure and the erase verify time (write-back time) are not included.
3. The recommended setting value of the step erase time is 5 ms.
4. Write-back is executed once by the issuance of the write-back command. Therefore, the retry count
must be the maximum value minus the number of commands issued.
5. The recommended setting value of the step writing time is 50
µ
s.
6. 100
µ
s is added to the actual writing time per word. The internal verify time during and after the writing
is not included.
7. When writing initially to shipped products, it is counted as one rewrite for both “erase to write” and “write
only”.
Example (P: Write, E: Erase)
Shipped product → P→ E → P → E → P: 3 rewrites
Shipped product → E → P → E → P → E → P: 3 rewrites
