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MT18HVS25672PKZ-80EH2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
DDR2 SDRAM VLP Mini-RDIMM
MT18HVS25672PKZ – 2GB
MT18HVS51272PKZ – 4GB
Features
• 244-pin, very low profile mini-registered dual in-line
memory module (VLP Mini-RDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 2GB (256 Meg x 72) or 4GB (512 Meg x 72)
• Supports ECC error detection and correction
•
Dual-rank, TwinDie™ (2COB) DRAM devices
• V
DD
= V
DDQ
= 1.8V
• V
DDSPD
= 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Halogen-free
Figure 1: 244-Pin VLP Mini-RDIMM
Module height: 18.2mm (0.72 in)
Options Marking
• Parity P
• Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (-40°C ≤ T
A
≤ +85°C)
1
I
• Package
– 244-pin DIMM (halogen-free) Z
• Frequency/CL
2
– 2.5ns @ CL = 5 (DDR2-800)
3
-80E
– 2.5ns @ CL = 6 (DDR2-800) -800
– 3.0ns @ CL = 5 (DDR2-667) -667
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
3. Not available in 4GB module density.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300 – 667 553 400 15 15 55
-53E PC2-4200 – – 553 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM
Features
PDF: 09005aef83d94997
hvs18c256_512x72pkz.pdf - Rev. E 4/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 2GB 4GB
Refresh count 8K 8K
Row address 16K A[13:0] 32K A[14:0]
Device bank address 8 BA[2:0] 8 BA[2:0]
Device configuration 2Gb TwinDie (256 Meg x 8) 4Gb TwinDie (512 Meg x 8)
Column address 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 2GB
Base device: MT47H256M8,
1
2Gb TwinDie DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HVS25672PK(I)Z-80E__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT18HVS25672PK(I)Z-800__ 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HVS25672PK(I)Z-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5
Table 4: Part Numbers and Timing Parameters – 4GB
Base device: MT47H512M8,
1
4Gb TwinDie DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18HVS51272PK(I)Z-800__ 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT18HVS51272PK(I)Z-667__ 4GB 512 Meg x 72 5.3 GB/s 3.0ns/800 MT/s 5-5-5
Notes:
1. Data sheets for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18HVS25672PKZ-80EM1.
2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM
Features
PDF: 09005aef83d94997
hvs18c256_512x72pkz.pdf - Rev. E 4/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Pin Assignments
Table 5: Pin Assignments
244-Pin VLP Mini-RDIMM Front 244-Pin VLP Mini-RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
32 V
SS
63 V
DDQ
94 DQS5# 123 V
SS
154 DQ28 185 A3 216 NF/
RDQS5#
2 V
SS
33 DQ24 64 A2 95 DQS5 124 DQ4 155 DQ29 186 A1 217 V
SS
3 DQ0 34 DQ25 65 V
DD
96 V
SS
125 DQ5 156 V
SS
187 V
DD
218 DQ46
4 DQ1 35 V
SS
66 V
SS
97 DQ42 126 V
SS
157 DM3/
RDQS3
188 CK0 219 DQ47
5 V
SS
36 DQS3# 67 V
SS
98 DQ43 127 DM0/
RDQS0
158 NF/
RDQS3#
189 CK0# 220 V
SS
6 DQS0# 37 DQS3 68 Par_In 99 V
SS
128 NF/
RDQS0#
159 V
SS
190 V
DD
221 DQ52
7 DQS0 38 V
SS
69 V
DD
100 DQ48 129 V
SS
160 DQ30 191 A0 222 DQ53
8 V
SS
39 DQ26 70 A10 101 DQ49 130 DQ6 161 DQ31 192 BA1 223 V
SS
9 DQ2 40 DQ27 71 BA0 102 V
SS
131 DQ7 162 V
SS
193 V
DD
224 NC
10 DQ3 41 V
SS
72 V
DD
103 SA2 132 V
SS
163 CB4 194 RAS# 225 NC
11 V
SS
42 CB0 73 WE# 104 NC 133 DQ12 164 CB5 195 V
DDQ
226 V
SS
12 DQ8 43 CB1 74 V
DDQ
105 V
SS
134 DQ13 165 V
SS
196 S0# 227 DM6/
RDQS6
13 DQ9 44 V
SS
75 CAS# 106 DQS6# 135 V
SS
166 DM8/
RDQS8
197 V
DDQ
228 NF/
RDQS6#
14 V
SS
45 DQS8# 76 V
DDQ
107 DQS6 136 DM1/
RDQS1
167 NF/
RDQS8#
198 ODT0 229 V
SS
15 DQS1# 46 DQS8 77 S1# 108 V
SS
137 NF/
RDQS1#
168 V
SS
199 A13 230 DQ54
16 DQS1 47 V
SS
78 ODT1 109 DQ50 138 V
SS
169 CB6 200 V
DD
231 DQ55
17 V
SS
48 CB2 79 V
DDQ
110 DQ51 139 NC 170 CB7 201 NC 232 V
SS
18 RESET# 49 CB3 80 NC 111 V
SS
140 NC 171 V
SS
202 V
SS
233 DQ60
19 NC 50 V
SS
81 V
SS
112 DQ56 141 V
SS
172 NC 203 DQ36 234 DQ61
20 V
SS
51 NC 82 DQ32 113 DQ57 142 DQ14 173 V
DDQ
204 DQ37 235 V
SS
21 DQ10 52 V
DDQ
83 DQ33 114 V
SS
143 DQ15 174 CKE1 205 V
SS
236 DM7/
RDQS7
22 DQ11 53 CKE0 84 V
SS
115 DQS7# 144 V
SS
175 V
DD
206 DM4/
RDQS4
237 NF/
RDQS7#
23 V
SS
54 V
DD
85 DQS4# 116 DQS7 145 DQ20 176 A15 207 NF/
RDQS4#
238 V
SS
24 DQ16 55 BA2 86 DQS4 117 V
SS
146 DQ21 177 A14 208 V
SS
239 DQ62
25 DQ17 56 Err_Out# 87 V
SS
118 DQ58 147 V
SS
178 V
DDQ
209 DQ38 240 DQ63
26 V
SS
57 V
DDQ
88 DQ34 119 DQ59 148 DM2/
RDQS2
179 A12 210 DQ39 241 V
SS
27 DQS2# 58 A11 89 DQ35 120 V
SS
149 NF/
RDQS2#
180 A9 211 V
SS
242 SDA
28 DQS2 59 A7 90 V
SS
121 SA0 150 V
SS
181 V
DD
212 DQ44 243 SCL
2GB, 4GB (x72, ECC, DR) 244-Pin DDR2 VLP Mini-RDIMM
Pin Assignments
PDF: 09005aef83d94997
hvs18c256_512x72pkz.pdf - Rev. E 4/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT18HVS25672PKZ-80EH2

Mfr. #:
Buy MT18HVS25672PKZ-80EH2
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 2GB 244MRDIMM
Lifecycle:
New from this manufacturer.
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