©2013 Silicon Storage Technology, Inc. DS70005016C 08/13
Data Sheet
www.microchip.com
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• Wide operating voltage range
–V
CC
= 3.0–5.0V
• High linear output power:
– 802.11a OFDM Spectrum mask compliance up to 23
dBm at 3V.
– Added EVM ~3% up to 20 dBm, typically at 5V V
CC
,
across 5.1-5.9 GHz for 54 Mbps 802.11a signal
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~11% @ P
OUT
= 19 dBm for 54 Mbps, 3.3V V
CC
• Gain:
– Typically 26 dB gain across broadband
4.9-5.9 GHz, 3.3V V
CC
• Low idle current
– ~120 mA I
CQ
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detection
• 20 dB linear dynamic range
•50 on-chip input match and simple output match
Applications
• WLAN (IEEE 802.11a/n)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15
The SST11CP15 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-linearity, high-efficiency applica-
tions with superb power-added efficiency while operating over the 4.9-5.9 GHz
frequency band. The SST11CP15 has excellent linearity while meeting 802.11a
spectrum mask at 23dBm. The SST11CP15 also features easy board-level usage
along with high-speed power-up/down control through a single combined refer-
ence voltage pin and is offered in a 12-contact UQFN package.
