©2013 Silicon Storage Technology, Inc. DS70005016C 08/13
6
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15
Data Sheet
Electrical Specifications
The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and
current specifications. Refer to Figures 3 through 12 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Supply Voltage at pins 2, 10, 11, 12 (V
CC
)...................................-0.3V to +5.5V
DC supply current (I
CC
)...................................................... 500mA
Operating Temperature (T
A
)............................................. -20ºC to +85ºC
Storage Temperature (T
STG
) ........................................... -40ºC to +120ºC
Maximum Junction Temperature (T
J
)............................................ +150ºC
Maximum Output Power...................................................... 27dBm
Surface Mount Solder Reflow Temperature ............................ 260°C for 10 seconds
Table 2: Operating Range
Range Ambient Temp V
CC
Industrial -10°C to +85°C 3.3V-5.0V
T2.1 75016
Table 3: DC Electrical Characteristics
Symbol Parameter Min. Typ Max. Unit
V
CC
Supply Voltage at pins 2, 10, 11, 12 2.7 3.3 5.0 V
I
CC
Supply Current @ P
OUT
=18dBm
V
CC
= 3.3V 220 mA
V
CC
= 4.2V 240 mA
V
CC
= 5.0V 290 mA
I
CQ
V
CC
quiescent current
V
CC
= 3.3V 135 mA
V
CC
= 4.2V 170 mA
V
CC
= 5.0V 175 mA
I
OFF
Shut down current 1.0 10 µA
V
REG
Reference Voltage for recommended application 2.85 V
T3.0 75016
