©2013 Silicon Storage Technology, Inc. DS70005016C 08/13
13
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15
Data Sheet
Figure 12:S-Parameters
1428 S-Parms.1.0
S12 versus Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
Frequency (GHz)
S12 (dB)
S11 versus Frequency
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3 .0 4.0 5.0 6 .0 7.0 8 .0 9.0 10 .0 11.0 12 .0 13.0
Frequency (GHz)
S11 (dB)
-40
-30
-20
-10
0
10
20
30
40
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 .0 11.0 12 .0 13.0
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0
S22 versus Frequency
Frequency (GHz)
S22 (dB)
S21 versus Freque ncy
Frequency (GHz)
S21 (dB)
©2013 Silicon Storage Technology, Inc. DS70005016C 08/13
14
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15
Data Sheet
Figure 13:Typical Application for High-Linearity 802.11a/n Application (V
CC
= 3.3V,
V
REG
=2.85V)
1428 F11.1
1
2
3
9
8
7
12 11 10
456
50
Ω
RFIN
50
Ω
35 mil from the edge of the package
0
Ω
105
Ω
DET
VREG
68
Ω
Test Conditions
V
REG
= 2.85V
V
CC
=VCCb=3.3V
0.7 pF
0.1
µF
0.1 pF
RFOUT
VCC
4.7 µF
0.1 µF
0.1 µF
200 pF
11CP15
2X2 12L UQFN
Top View
VCCb
0.1 µF
Note: The SST11CP15 has on-chip DC-blocking caps for RF ports
©2013 Silicon Storage Technology, Inc. DS70005016C 08/13
15
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15
Data Sheet
Figure 14:Typical Application for High-Linearity 802.11a/n Application (V
CC
= 5.0V,
V
REG
=2.90V)
1428 F15.0
1
2
3
9
8
7
12 11 10
456
50
Ω
RFIN
50
Ω
Capacitor placement is measured from
edge of PA to edge of capacitor.
0
Ω
87
Ω
DET
VREG
87
Ω
Test Conditions
V
REG
= 2.9V
V
CC
=VCCb=5.0V
50
Ω
146
mil
12
mil
20
mil
0.7 pF
0.1
µF
RFOUT
VCC
4.7 µF
0.1 µF
0.1 µF
200 pF
11CP15
2X2 12L UQFN
Top View
VCCb
0.1 µF

SST11CP15-QUBE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier WLAN 11a/n PA Low Current
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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