DocID018534 Rev 5 5/19
STGIPS14K60T Electrical ratings
19
2 Electrical ratings
2.1 Absolute maximum ratings
Table 3. Inverter part
Symbol Parameter Value Unit
V
PN
Supply voltage applied between P - N
U
, N
V
, N
W
450 V
V
PN(surge)
Supply voltage (surge) applied between P - N
U
, N
V
, N
W
500 V
V
CES
Each IGBT collector emitter voltage (V
IN
(1)
= 0)
1. Applied between
HIN
i
, LIN
i and
G
ND
for i = U, V, W
600 V
± I
C
(2)
2. Calculated according to the iterative formula:
Each IGBT continuous collector current at T
C
= 25°C 14 A
± I
CP
(3)
3. Pulse width limited by max junction temperature
Each IGBT pulsed collector current 30 A
P
TOT
Each IGBT total dissipation at T
C
= 25°C 42 W
t
scw
Short circuit withstand time, V
CE
= 0.5 V
(BR)CES
T
J
= 125 °C, V
CC
= V
boot
= 15 V, V
IN (1)
= 0 ÷ 5 V
5 µs
Table 4. Control part
Symbol Parameter Min. Max. Unit
V
OUT
Output voltage applied between
OUT
U
, OUT
V
, OUT
W
- GND
V
boot
- 21 V
boot
+ 0.3 V
V
CC
Low voltage power supply - 0.3 21 V
V
CIN
Comparator input voltage - 0.3 V
CC
+ 0.3 V
V
boot
Bootstrap voltage - 0.3 620 V
V
IN
Logic input voltage applied between HIN, LIN and GND - 0.3 15 V
V
SD
SD voltage - 0.3 15 V
dV
OUT
/dt Allowed output slew rate 50 V/ns
Table 5. Total system
Symbol Parameter Value Unit
V
ISO
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
2500 V
T
C
Module case operation temperature -40 to 125 °C
T
J
Power chips operating junction temperature -40 to 150 °C
I
C
T
C
( )
T
j max( )
T
C
–
R
thj c–
V
CE sat( ) max( )
T
j max( )
I
C
T
C
( ),( )×
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