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STGIPS14K60T

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DocID018534 Rev 5 7/19
STGIPS14K60T Electrical characteristics
19
3 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Note: t
ON
and t
OFF
include the propagation delay time of the internal drive. t
C(ON)
and t
C(OFF)
are
the switching time of IGBT itself under the internally given gate driving condition.
Table 7. Inverter part
Symbol Parameter Test conditions
Value
Unit
Min. Typ. Max.
V
CE(sat)
Collector-emitter
saturation voltage
V
CC
= V
boot
= 15 V, V
IN
(1)
= 0 ÷ 5 V,
I
C
= 7 A
- 2.1 2.5
V
V
CC
= V
boot
= 15 V, V
IN
(1)
= 0 ÷ 5 V,
I
C
= 7 A, T
J
= 125 °C
- 1.8
I
CES
Collector-cut off current
(V
IN
(1)
= 0 “logic state”)
V
CE
= 550 V, V
CC
= V
Boot
= 15 V - 150 µA
V
F
Diode forward voltage V
IN
(1)
= 0 “logic state”, I
C
= 7 A - 2.1 V
Inductive load switching time and energy
t
on
Turn-on time
V
DD
= 300 V,
V
CC
= V
boot
= 15 V,
V
IN
(1)
= 0 ÷ 5 V,
I
C
= 7 A
(see Figure 5)
- 270 -
ns
t
c(on)
Crossover time (on) - 130 -
t
off
Turn-off time - 520 -
t
c(off)
Crossover time (off) - 140 -
t
rr
Reverse recovery time - 130 -
E
on
Turn-on switching losses - 150 -
µJ
E
off
Turn-off switching losses - 110 -
1. Applied between
HIN
i
, LIN
i and
G
ND
for i = U, V, W (LIN inputs are active-low).
Electrical characteristics STGIPS14K60T
8/19 DocID018534 Rev 5
Figure 3. Switching time test circuit
Note: Figure 4: Switching time definition refers to HIN inputs (active high). For LIN inputs (active
low), V
IN
polarity must be inverted for turn-on and turn-off.
Figure 4. Switching time definition
VBOOT>VCC
RSD
L
IC
VCE
+5V
VCC
INPUT
0
1
BUS
/Lin
/SD
Hin
Vcc
DT LVG
HVG
OUT
BOOT
CP+
GND
AM17167v1
VCE
IC IC
VIN
t
ON
t
C(ON)
VIN(ON)
10% IC 90% IC 10% VCE
(a) turn-on
(b) turn-off
t
rr
100% IC 100% IC
VIN
VCE
t
OFF
t
C(OFF)
VIN(OFF)
10% VCE 10% IC
AM09223V1
DocID018534 Rev 5 9/19
STGIPS14K60T Electrical characteristics
19
3.1 Control part
Table 8. Low voltage power supply (V
CC
= 15 V unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC_hys
V
CC
UV hysteresis 1.2 1.5 1.8 V
V
CC_thON
V
CC
UV turn ON threshold 11.5 12 12.5 V
V
CC_thOFF
V
CC
UV turn OFF threshold 10 10.5 11 V
I
qccu
Undervoltage quiescent
supply current
V
CC
= 10 V
SD = 5 V; LIN = 5 V;
H
IN
= 0
450 µA
I
qcc
Quiescent current
V
CC
= 15 V
SD = 5 V; LIN = 5 V
H
IN
= 0
3.5 mA
Table 9. Bootstrapped voltage (V
CC
= 15 V unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BS_hys
V
BS
UV
hysteresis 1.2 1.5 1.8 V
V
BS_thON
V
BS
UV
turn ON threshold 11.1 11.5 12.1 V
V
BS_thOFF
V
BS
UV
turn OFF threshold 9.8 10 10.6 V
I
QBSU
Undervoltage V
BS
quiescent
current
V
BS
< 9 V
SD = 5 V; LIN and
HIN = 5 V
70 110 µA
I
QBS
V
BS
quiescent current
V
BS
= 15 V
SD = 5 V; LIN and
HIN = 5 V
200 300 µA
R
DS(on)
Bootstrap driver on resistance LVG ON 120 Ω
Table 10. Logic inputs (V
CC
= 15 V unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
il
Low logic level voltage 0.8 1.1 V
V
ih
High logic level voltage 1.9 2.25 V
I
HINh
HIN logic “1” input bias current HIN = 15 V 110 175 260 µA
I
HINl
HIN logic “0” input bias current HIN = 0 V 1 µA
I
LINl
LIN logic “1” input bias current LIN = 0 V 3 6 20 µA
I
LINh
LIN logic “0” input bias current LIN = 15 V 1 µA
I
SDh
SD logic “0” input bias current SD = 15 V 30 120 300 µA
I
SDl
SD logic “1” input bias current SD = 0 V 3 µA
Dt Dead time see Figure 9 600 ns
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STGIPS14K60T

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Manufacturer:
STMicroelectronics
Description:
IGBT Modules SLLIMM IPM 3-Phase 14A 600V Rugged IGBT
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