Table 10: Thermal Characteristics
Symbol Parameter/Condition Value Units Notes
T
C
Commercial operating case temperature 0 to 85 °C 1, 2, 3
T
C
>85 to 95 °C 1, 2, 3, 4
T
OPER
Normal operating temperature range 0 to 85 °C 5, 7
T
OPER
Extended temperature operating range (optional) >85 to 95 °C 5, 7
T
STG
Non-operating storage temperature –55 to 100 °C 6
RH
STG
Non-operating Storage Relative Humidity (non-condensing) 5 to 95 %
NA Change Rate of Storage Temperature 20 °C/hour
Notes:
1. Maximum operating case temperature; T
C
is measured in the center of the package.
2. A thermal solution must be designed to ensure the DRAM device does not exceed the
maximum T
C
during operation.
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
C
dur-
ing operation.
4. If T
C
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
interval refresh rate.
5. The refresh rate must double when 85°C < T
OPER
95°C.
6. Storage temperature is defined as the temperature of the top/center of the DRAM and
does not reflect the storage temperatures of shipping trays.
7. For additional information, refer to technical note TN-00-08: "Thermal Applications"
available at micron.com.
16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM
Electrical Specifications
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G6 -075
-2G4 -083E
-2G3 -083
-2G1 -093E
-1G9 -107E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM
DRAM Operating Conditions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision A)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
810 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
945 mA
Precharge standby current I
DD2N
2
900 mA
Precharge standby ODT current I
DD2NT
1
810 mA
Precharge power-down current I
DD2P
2
540 mA
Precharge quite standby current I
DD2Q
2
810 mA
Active standby current I
DD3N
2
990 mA
Active standby I
PP
current I
PP3N
2
54 mA
Active power-down current I
DD3P
2
720 mA
Burst read current I
DD4R
1
1620 mA
Burst write current I
DD4W
1
1710 mA
Burst refresh current (1x REF) I
DD5B
1
2295 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
297 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
2
540 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
2
630 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
2
450 mA
Auto self refresh current (25°C) I
DD6A
2
360 mA
Auto self refresh current (45°C) I
DD6A
2
450 mA
Auto self refresh current (75°C) I
DD6A
2
630 mA
Bank interleave read current I
DD7
1
2115 mA
Bank interleave read I
PP
current I
PP7
1
162 mA
Maximum power-down current I
DD8
2
360 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM
I
DD
Specifications
09005aef862e760f
asf18c2gx72pdz.pdf - Rev. D 8/16 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MTA18ASF2G72PDZ-2G3D1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR4 16GB RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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