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MTA18ASF2G72PDZ-2G3D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
Table 13: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision B)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
684 657 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
54 54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
792 765 mA
Precharge standby current I
DD2N
2
630 612 mA
Precharge standby ODT current I
DD2NT
1
675 675 mA
Precharge power-down current I
DD2P
2
450 450 mA
Precharge quite standby current I
DD2Q
2
540 540 mA
Active standby current I
DD3N
2
828 774 mA
Active standby I
PP
current I
PP3N
2
54 54 mA
Active power-down current I
DD3P
2
702 666 mA
Burst read current I
DD4R
1
1539 1440 mA
Burst write current I
DD4W
1
1413 1332 mA
Burst refresh current (1x REF) I
DD5B
1
2475 2475 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
279 279 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
2
540 540 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
2
630 630 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
2
360 360 mA
Auto self refresh current (25°C) I
DD6A
2
154.8 154.8 mA
Auto self refresh current (45°C) I
DD6A
2
360 360 mA
Auto self refresh current (75°C) I
DD6A
2
540 540 mA
Bank interleave read current I
DD7
1
1845 1800 mA
Bank interleave read I
PP
current I
PP7
1
162 162 mA
Maximum power-down current I
DD8
2
450 450 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM
I
DD
Specifications
09005aef862e760f
asf18c2gx72pdz.pdf - Rev. D 8/16 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 14: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision D)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
684 657 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
54 54 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
792 765 mA
Precharge standby current I
DD2N
2
630 612 mA
Precharge standby ODT current I
DD2NT
1
675 675 mA
Precharge power-down current I
DD2P
2
450 450 mA
Precharge quite standby current I
DD2Q
2
540 540 mA
Active standby current I
DD3N
2
918 864 mA
Active standby I
PP
current I
PP3N
2
54 54 mA
Active power-down current I
DD3P
2
702 666 mA
Burst read current I
DD4R
1
1539 1440 mA
Burst write current I
DD4W
1
1458 1377 mA
Burst refresh current (1x REF) I
DD5B
1
2475 2475 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
279 279 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
2
558 558 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
2
648 648 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
2
378 378 mA
Auto self refresh current (25°C) I
DD6A
2
154.8 154.8 mA
Auto self refresh current (45°C) I
DD6A
2
378 378 mA
Auto self refresh current (75°C) I
DD6A
2
558 558 mA
Bank interleave read current I
DD7
1
1845 1800 mA
Bank interleave read I
PP
current I
PP7
1
162 162 mA
Maximum power-down current I
DD8
2
450 450 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM
I
DD
Specifications
09005aef862e760f
asf18c2gx72pdz.pdf - Rev. D 8/16 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 15: Registering Clock Driver Electrical Characteristics
DDR4 RCD01 devices or equivalent
Parameter Symbol Pins Min Nom Max Units
DC supply voltage V
DD
– 1.14 1.2 1.26 V
DC reference voltage V
REF
V
REFCA
0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
DC termination
voltage
V
TT
– V
REF
- 40mV V
REF
V
REF
+ 40mV V
High-level input
voltage
V
IH. CMOS
DRST_n 0.65 × V
DD
– V
DD
V
Low-level input
voltage
V
IL. CMOS
0 – 0.35 × V
DD
V
DRST_n pulse width
t
IN-
IT_Pow-
er_stable
– 1.0 – – µs
AC high-level output
voltage
V
OH(AC)
All outputs except
ALERT_n
V
TT
+ (0.15 × V
DD
) – – V
AC low-level output
voltage
V
OL(AC)
– – V
TT
+ (0.15 x V
DD
) V
AC differential out-
put high measure-
ment level (for out-
put slew rate)
V
OHdiff(AC)
Yn_t - Yn_c, BCK_t -
BCK_c
– 0.3 × V
DD
– mV
AC differential out-
put low measure-
ment level (for out-
put slew rate)
V
OLdiff(AC)
– –0.3 × V
DD
– mV
Note:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of DDR4 SDRAM RDIMMs. These are meant to be a subset of the parameters for the
specific device used on the module. See the JEDEC RCD01 specification for complete op-
erating electrical characteristics. Registering clock driver parametric values are specified
for device default control word settings, unless otherwise stated. The RC0A control
word setting does not affect parametric values.
16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM
Registering Clock Driver Specifications
09005aef862e760f
asf18c2gx72pdz.pdf - Rev. D 8/16 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MTA18ASF2G72PDZ-2G3D1

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Memory Modules DDR4 16GB RDIMM
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