NCV7708F
www.onsemi.com
16
Applications Drawing
The applications drawing below displays the range with
which this part can drive a multitude of loads.
1. H−Bridge Driver configuration
2. Low Side Driver
3. High Side Driver
Figure 8. Application Drawing
M
VSx
OUTHx
OUTLx
GND
VSx
OUTHx
OUTLx
GND
1
3
VSx
OUTHx
OUTLx
GND
2
C
EMC1
10 nF
(optional)
C
EMC2
10 nF
(optional)
C
EMC3
10 nF
(optional)
C
EMC4
10 nF
(optional)
V
BAT
C
IN
Reverse battery diode
Any combination of H−Bridge, high−side, or low−side drivers can be designed in. This allows for flexibility in many
systems.
H−Bridge Driver Configuration
The NCV7708F has the flexibility of controlling each
driver independently. When the device is set up in an
H−Bridge configuration, the software design has to take care
of avoiding simultaneous activation of connected HS and LS
transistors. Resulting high shoot through currents could
cause irreversible damage to the device.
Overvoltage Clamping − Driving Inductive Loads
To avoid excessive voltages when driving inductive loads
in a single−side−mode (LS or HS switch, no freewheeling
path), the NCV7708F provides internal clamping diodes.
Thus any load type can be driven without the requirement of
external freewheeling diodes. Due to high power dissipation
during clamping, the maximum energy capability of the
driver transistor has to be considered.
