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NCV7708FDQR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
NCV7708F
www.onsemi.com
4
MAXIMUM RATINGS
Rating Value Unit
Power Supply Voltage (VS1, VS2)
(DC)
(AC), t < 500 ms, Ivsx > −2 A
−0.3 to 40
−1.0
V
Output Pin OUTHx
(DC)
(AC – inductive clamping)
−0.3 to 40
−8.0
V
Output Pin OUTLx
(DC)
(AC), t < 500 ms, IOUTLx > −2 A
(AC Inductive Clamping)
−0.3 to 36
−1.0
45
V
Pin Voltage (Logic Input pins, SI, SCLK, CSB, SO, EN, V
CC
) −0.3 to 5.5 V
Output Current (OUTL1, OUTL2, OUTL3, OUTL4, OUTL5, OUTL6, OUTH1, OUTH2, OUTH3, OUTH4,
OUTH5, OUTH6)
(DC) Vds = 12 V
(DC) Vds = 20 V
(DC) Vds = 40 V
(AC) Vds = 12 V, (50 ms pulse, 1 s period)
(AC) Vds = 20 V, (50 ms pulse, 1 s period)
(AC) Vds = 40 V, (50 ms pulse, 1 s period)
−1.5 to 1.5
−0.7 to 0.7
−0.25 to 0.25
−2.0 to 2.0
−0.9 to 0.9
−0.3 to 0.3
A
Electrostatic Discharge, Human Body Model, VS1, VS2, OUTx (Note 1) 4.0 kV
Electrostatic Discharge, Human Body Model, all other pins 2.0 kV
Electrostatic Discharge, Machine Model 200 V
Electrostatic Discharge, Charged Device Model 1.0 kV
Short Circuit Reliability Characterization (AEC−Q10x) GRADE A −
Operating Junction Temperature −40 to 150 °C
Storage Temperature Range −55 to 150 °C
Moisture Sensitivity Level SOIC−28
SSOP−24 EPAD
MSL 3
MSL 2
−
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C (Note 2) 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested with a VS1/VS2 power supply common point.
2. For additional information, please see or download the ON Semiconductor Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
THERMAL CONDITIONS
Thermal Parameters
Test Conditions, Typical Value
Unit
Board Details (Note 3) Board Details (Note 4)
SOIC−28
Junction−to−Lead (psi−JL8, Y
JL8
) or Pins 6−9, 20−23
10 11 °C/W
Junction−to−Ambient (R
q
JA
, q
JA
)
78 63 °C/W
SSOP−24 EPAD
Junction−to−Board (R
Y
B
)
− 2 °C/W
Junction−to−Ambient (R
q
JA
)
− 54 °C/W
Junction−to−Lead (R
Y
JL
)
− 7 °C/W
3. 1−oz copper, 240 mm
2
copper area, 0.062″ thick FR4. This is the minimum pad board size.
4. 1−oz copper, 986 mm
2
copper area, 0.062″ thick FR4.
NCV7708F
www.onsemi.com
5
RECOMMENDED OPERATING CONDITIONS
Rating Symbol
Value
Unit
Min Max
Digital Supply Input Voltage (V
CC
) V
CCmax
3.15 5.25 V
Battery Supply Input Voltage (V
S
) V
Smax
5.5 28 V
DC Output Current (I(OUTLx), I(OUTHx)) DC
max
− 0.5 A
Junction Temperature T
J
−40 150 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 5.5 V < VSx < 40 V, 3.15 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic
Symbol Test Conditions Min Typ Max Unit
GENERAL
Supply Current (VS1 + VS2)
Sleep Mode (Note 5)
I
vs_sleep
VS1 = VS2 = 13.2 V,
V
CC
= CSB = 5 V,
EN = SI = SCLK = 0 V
(−40°C to 85°C)
− 1.0 2.5
mA
Supply Current (VS1)
Active Mode
I
vs1_act
EN = V
CC
,
5.5 V < VSx < 35 V
No Load
− 1.25 2.5 mA
Supply Current (V
CC
) − Sleep Mode (Note 5) I
vcc_sleep
CSB = V
CC
,
EN = SI = SCLK = 0 V
(−40°C to 85°C)
− 1.0 2.5
mA
Supply Current (V
CC
) − Active Mode I
vcc_act
EN = CSB = V
CC
,
SI = SCLK = 0 V
− 1.5 3.0 mA
Supply Current (VS2)
Active Mode
I
vs2_act
EN = V
CC
,
5.5 V < VSx < 35 V
No Load
− 1.25 2.5 mA
V
CC
Power−On−Reset Threshold V
CCpor
− 2.55 2.9 V
VSx Undervoltage Detection Threshold V
Suv
VSx decreasing 3.7 4.1 4.5 V
VSx Undervoltage Detection Hysteresis V
Suv_hys
100 365 450 mV
VSx Overvoltage Detection Threshold V
Sov
VSx increasing 33 36.5 40.0 V
VSx Overvoltage Detection Hysteresis V
Sov_hys
1 2.5 4.0 V
Thermal Warning (Note 6) T
tw
120 140 170 °C
Thermal Warning Hysteresis (Note 6) T
tw_hys
− 20 − °C
Thermal Shutdown (Note 6) T
tsd
155 175 195 °C
Ratio of Thermal Shutdown to Thermal
Warning (Note 6)
T
tsd
/T
tw
1.05 1.20 − −
OUTPUTS
Output High R
DS(on)
(source and sink) R
DSon_src
R
DSon_snk
I
out
= −500 mA
25°C
−40°C < T
J
< 150°C
−
−
0.6
−
1.3
1.7
W
Source Leakage Current I
src
OUTH(1−6) = 0 V,
Vsx = 40 V, V
CC
= 5 V
OUTH(1−6) = 0 V,
Vsx = 13.2 V, V
CC
= 5V
−5.0
−1.0
−
−
−
−
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. For temperatures above 85°C, refer to graphs for VSx and V
CC
Sleep Current vs. Temperature on page 17.
6. Thermal characteristics are not subject to production test.
7. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 17.
8. Current limit is active with and without overcurrent detection.
9. Not production tested.
NCV7708F
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 5.5 V < VSx < 40 V, 3.15 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic UnitMaxTypMinTest ConditionsSymbol
OUTPUTS
Sink Leakage Current
I
snk
OUTL(1−6) = 34 V,
V
CC
= 5 V
OUTL(1−6) = 34 V,
V
CC
= 5 V, T = 25°C
−
−
−
−
5.0
1.0
mA
Power Transistor Body Diode Forward Voltage V
bd_fwd
I
F
= 500 mA − 0.9 1.3 V
High−Side Clamping Voltage (Note 7) V
clp_hs
I
(OUTHx)
= −50 mA − − −0.7 V
Low−Side Clamping Voltage V
clp_ls
I
(OUTLx)
= 50 mA 36 − 45 V
UNDER LOAD
Under Load Detection Threshold (OUTLx)
I
ul_ls
V
CC
= 5 V, Vsx = 13.2 V 2.0 8.0 16 mA
Under Load Detection Threshold (OUTHx) I
ul_hs
V
CC
= 5 V, Vsx = 13.2 V −16 −8.0 −2.0 mA
Under Load Detection Delay Time t
ul_del
V
CC
= 5 V, Vsx = 13.2 V 200 350 600
ms
OVERCURRENT
Overcurrent Shutdown Threshold (OUTHx)
I
ocsd_hs
V
CC
= 5 V, Vsx = 13.2 V,
Bit13 = 1
−2.0 −1.45 −1.1 A
Overcurrent Shutdown Threshold (OUTLx) I
ocsd_ls
V
CC
= 5 V, Vsx = 13.2 V,
Bit13 = 1
1.1 1.45 2.0 A
Overcurrent Shutdown Delay Time
t
ocsd_0
t
ocsd_1
V
CC
= 5 V, Vsx = 13.2 V,
Bit13 = 0
Bit13 = 1
80
10
200
25
400
50
ms
ms
CURRENT LIMIT (Note 8)
Current Limit (OUTHx)
I
lim_hs
V
CC
= 5 V, Vsx = 13.2 V −5.0 −3.0 −2.0 A
Current Limit (OUTLx) I
lim_ls
V
CC
= 5 V, Vsx = 13.2 V 2.0 3.0 5.0 A
LOGIC INPUTS (EN, SI, SCLK, CSB)
Input Threshold − High
Input Threshold − Low
V
inth
2.0
−
−
−
−
0.8
V
Input Hysteresis (SI, SCLK, CSB) V
inhys_spi
100 300 600 mV
Input Hysteresis (EN) V
inhys_en
100 400 800 mV
Pull−down Resistance (EN, SI, SCLK) R
pd
EN = SI = SCLK = V
CC
50 125 250
kW
Pull−up Resistance (CSB) R
pu
CSB = 0 V 50 125 250
kW
Input Capacitance (Note 9) C
IN
− 10 15 pF
LOGIC OUTPUT (SO)
Output High
V
soh
I
out
= 1 mA V
CC
– 1.0 V
CC
– 0.7 − V
Output Low V
sol
I
out
= −1.6 mA − 0.2 0.4 V
Tri−state Leakage I
so
CSB = V
CC
,
0 V < SO < V
CC
−10 − 10
mA
Tri−state Input Capacitance (Note 9) C
so
CSB = V
CC
,
0 V < V
CC
< 5.25 V
− 10 15 pF
TIMING SPECIFICATIONS
High Side Turn On Time
t
hson
Vs = 13.2 V, R
load
= 25 W
− 7.5 13
ms
High Side Turn Off Time t
hsoff
Vs = 13.2 V, R
load
= 25 W
− 3.0 6.0
ms
Low Side Turn On Time t
lson
Vs = 13.2 V, R
load
= 25 W
− 6.5 13
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. For temperatures above 85°C, refer to graphs for VSx and V
CC
Sleep Current vs. Temperature on page 17.
6. Thermal characteristics are not subject to production test.
7. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 17.
8. Current limit is active with and without overcurrent detection.
9. Not production tested.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

NCV7708FDQR2G

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Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers AUTOMOTIVE DRIVER
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