7
IDT70V631S
High-Speed 3.3V 256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
(1)
Recommended DC Operating
Conditions with V
DDQ at 2.5V
Absolute Maximum Ratings
(1)
NOTES:
1. V
IL > -1.5V for pulse width less than 10 ns.
2. V
TERM must not exceed VDDQ + 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IL (0V), and VDDQX for that port must be supplied
as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed VDD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to
< 20mA for the period of VTERM > VDD + 150mV.
NOTE:
1. This is the parameter T
A. This is the "instant on" case temperature.
Recommended DC Operating
Conditions with V
DDQ at 3.3V
NOTES:
1. V
IL > -1.5V for pulse width less than 10 ns.
2. V
TERM must not exceed VDDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IH (3.3V), and VDDQX for that port must be
supplied as indicated above.
Grade
Ambient
Temperature GND V
DD
Commercial 0
O
C to +70
O
C0V3.3V
+
150mV
Industrial -40
O
C to +85
O
C0V3.3V
+
150mV
5622 tbl 04
Symbol Rating Commercial
& Industrial
Unit
V
TE R M
(2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6 V
T
BIAS
Tem p e r at ur e
Under Bias
-55 to +125
o
C
T
STG
Storage
Tem p e r at ur e
-65 to +150
o
C
I
OUT
DC Output Current 50 mA
5622 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
DD
Core Supply Voltage 3.15 3.3 3.45 V
V
DDQ
I/O Supply Voltage
(3)
2.4 2.5 2.6 V
V
SS
Ground 0 0 0 V
V
IH
Input High Voltage
(3 )
(Address & Control Inputs)
1.7
____
V
DDQ
+ 100mV
(2 )
V
V
IH
Input High Voltage - I/O
(3 )
1.7
____
V
DDQ
+ 100mV
(2 )
V
V
IL
Input Low Voltage -0.5
(1 )
____
0.7 V
5622 tbl 06
Symbol Parameter Min. Typ. Max. Unit
V
DD
Core Supply Voltage 3.15 3.3 3.45 V
V
DDQ
I/O Supply Voltage
(3)
3.15 3.3 3.45 V
V
SS
Ground 0 0 0 V
V
IH
Input High Voltage
(Address & Control Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IL
Input Low Voltage -0.3
(1)
____
0.8 V
5622 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C
OUT also references CI/O.
Capacitance
(1)
(TA = +25°C, F = 1.0MHZ) TQFP ONLY
Symbol Parameter Conditions
(2 )
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 8 pF
C
OUT
(3)
Output Capacitance V
OUT
= 3dV 10.5 pF
5622 tbl 08
