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CAT28F001H-12T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
1
Doc. No. MD-1078, Rev. K
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
1 Megabit CMOS Boot Block
Flash Memory
FEATURES
■ Fast Read Access Time: 90/120 ns
■ On-Chip Address and Data Latches
■ Blocked Architecture
— One 8 KB Boot Block w/ Lock Out
• Top or Bottom Locations
— Two 4 KB Parameter Blocks
— One 112 KB Main Block
■ Low Power CMOS Operation
■ 12.0V ± 5% Programming and Erase Voltage
■ Automated Program & Erase Algorithms
■ High Speed Programming
■ Commercial, Industrial and Automotive
Temperature Ranges
■ Deep Powerdown Mode
— 0.05 µA I
CC
Typical
— 0.8 µA I
PP
Typical
■ Hardware Data Protection
■ Electronic Signature
■ 100,000 Program/Erase Cycles and 10 Year
Data Retention
■ JEDEC Standard Pinouts:
— 32 pin DIP
— 32 pin PLCC
— 32 pin TSOP
■ Reset/Deep Power Down Mode
■ "Green" Package Options Available
I/O
0
–I/O
7
I/O BUFFERS
CE, OE LOGIC
SENSE
AMP
DATA
LATCH
ERASE VOLTAGE
SWITCH
COMMAND
REGISTER
CE
OE
WE
VOLTAGE VERIFY
SWITCH
ADDRESS LATCH
Y-DECODER
X-DECODER
Y-GATING
8K-BYTE BOOT BLOCK
4K-BYTE PARAMETER BLOCK
4K-BYTE PARAMETER BLOCK
112K-BYTE MAIN BLOCK
A
0
–A
16
WRITE STATE
MACHINE
ADDRESS
COUNTER
STATUS
REGISTER
COMPARATOR
PROGRAM VOLTAGE
SWITCH
RP
BLOCK DIAGRAM
DESCRIPTION
The CAT28F001 is a high speed 128K X 8 bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after sale
code updates.
The CAT28F001 has a blocked architecture with one 8
KB Boot Block, two 4 KB Parameter Blocks and one 112
KB Main Block. The Boot Block section can be at the top
or bottom of the memory map and includes a reprogram-
ming write lock out feature to guarantee data integrity. It
is designed to contain secure code which will bring up
the system minimally and download code to other loca-
tions of CAT28F001.
The CAT28F001 is designed with a signature mode
which allows the user to identify the IC manufacturer and
device type. The CAT28F001 is also designed with on-
Chip Address Latches, Data Latches, Programming and
Erase Algorithms.
The CAT28F001 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, PLCC or TSOP packages.
Licensed Intel
second source
CAT28F001
CAT28F001
2
Doc. No. MD-1078, Rev. K
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
PIN CONFIGURATION
DIP Package (L)
TSOP Package (Standard Pinout) (T, H)
PIN FUNCTIONS
Pin Name Type Function
A
0
–A
16
Input Address Inputs for
memory addressing
I/O
0
–I/O
7
I/O Data Input/Output
CE Input Chip Enable
OE Input Output Enable
WE Input Write Enable
V
CC
Voltage Supply
V
SS
Ground
V
PP
Program/Erase
Voltage Supply
RP Input Power Down
28F001 F02
PLCC Package (N, G)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
V
SS
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
12
A
15
A
16
V
PP
V
CC
WE
RP
A
14
A
13
A
8
A
9
A
11
I/O
0
I/O
1
I/O
2
V
SS
I/O
6
I/O
5
I/O
4
I/O
3
13
14
15
16
20
19
18
17
9
10
11
12
24
23
22
21
A
3
A
2
A
1
A
0
OE
A
10
CE
I/O
7
A
7
A
6
A
5
A
4
5
6
7
8
1
2
3
4
V
PP
A
16
A
15
A
12
A
13
A
8
A
9
A
11
28
27
26
25
32
31
30
29
V
CC
WE
RP
A
14
A
7
A
6
A
5
A
4
5
6
7
8
A
3
A
2
A
1
A
0
9
10
11
12
I/O
0
13
A
14
A
13
A
8
A
9
29
28
27
26
A
11
OE
A
10
CE
25
24
23
22
I/O
7
21
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
14 15 16 17 18 19 20
4321323130
A
12
A
15
A
16
V
PP
V
CC
WE
RP
CAT28F001
3
Doc. No. MD-1078, Rev. K
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................... –55°C to +95°C
Storage Temperature....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(1)
........... –2.0V to +V
CC
+ 2.0V
(Except A
9
, RP, OE, V
CC
and V
PP
)
Voltage on Pin A
9
, RP AND OE with
Respect to Ground
(1)
................... –2.0V to +13.5V
V
PP
with Respect to Ground
during Program/Erase
(1)
.............. –2.0V to +14.0V
V
CC
with Respect to Ground
(1)
............ –2.0V to +7.0V
Package Power Dissipation
Capability (T
A
= 25°C) .................................. 1.0 W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol Parameter Min. Max. Units Test Method
N
END
(3)
Endurance 100K Cycles/Byte MIL-STD-883, Test Method 1033
T
DR
(3)
Data Retention 10 Years MIL-STD-883, Test Method 1008
V
ZAP
(3)
ESD Susceptibility 2000 Volts MIL-STD-883, Test Method 3015
I
LTH
(3)(4)
Latch-Up 100 mA JEDEC Standard 17
CAPACITANCE T
A
= 25°C, f = 1.0 MHz
Limits
Symbol Test Min Max. Units Conditions
C
IN
(3)
Input Pin Capacitance 8 pF V
IN
= 0V
C
OUT
(3)
Output Pin Capacitance 12 pF V
OUT
= 0V
C
VPP
(3)
V
PP
Supply Capacitance 25 pF V
PP
= 0V
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+ 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

CAT28F001H-12T

Mfr. #:
Buy CAT28F001H-12T
Manufacturer:
ON Semiconductor
Description:
IC FLASH 1M PARALLEL 32TSOP
Lifecycle:
New from this manufacturer.
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