CAT28F001
4
Doc. No. MD-1078, Rev. K
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
D.C. OPERATING CHARACTERISTICS
V
CC
= +5V ±10%, unless otherwise specified
Limits
Symbol Parameter Min. Max. Unit Test Conditions
I
LI
Input Leakage Current ±1.0 µAV
IN
= V
CC
or V
SS
V
CC
= 5.5V
I
LO
Output Leakage Current ±10 µAV
OUT
= V
CC
or V
SS
,
V
CC
= 5.5V
I
SB1
V
CC
Standby Current CMOS 100 µA CE = V
CC
±0.2V = RP
V
CC
= 5.5V
I
SB2
V
CC
Standby Current TTL 1.5 mA CE = RP = V
IH
, V
CC
= 5.5V
I
PPD
V
PP
Deep Powerdown Current 1.0 µA RP = GND±0.2V
I
CC1
V
CC
Active Read Current 30 mA V
CC
= 5.5V, CE = V
IL
,
I
OUT
= 0mA, f = 8 MHz
I
CC2
(1)
V
CC
Programming Current 20 mA V
CC
= 5.5V,
Programming in Progress
I
CC3
(1)
V
CC
Erase Current 20 mA V
CC
= 5.5V,
Erase in Progress
I
PPS
V
PP
Standby Current ±10 µAV
PP
< V
CC
200 µAV
PP
> V
CC
I
PP1
V
PP
Read Current 200 µAV
PP
= V
PPH
I
PP2
(1)
V
PP
Programming Current 30 mA V
PP
= V
PPH
,
Programming in Progress
I
PP3
(1)
V
PP
Erase Current 30 mA V
PP
= V
PPH
,
Erase in Progress
V
IL
Input Low Level –0.5 0.8 V
V
OL
Output Low Level 0.45 V I
OL
= 5.8mA, V
CC
= 4.5V
V
IH
Input High Level 2.0 V
CC
+0.5 V
V
OH
Output High Level 2.4 V I
OH
= 2.5mA, V
CC
= 4.5V
V
ID
A
9
Signature Voltage 11.5 13.0 V A
9
= V
ID
I
ID
A
9
Signature Current 500 µAA
9
= V
ID
I
CCD
V
CC
Deep Powerdown Current 1.0 µA RP = GND±0.2V
I
CCES
V
CC
Erase Suspend Current 10 mA Erase Suspended CE = V
IH
I
PPES
V
PP
Erase Suspend Current 300 µA Erase Suspended
V
PP
=V
PPH
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
CAT28F001
5
Doc. No. MD-1078, Rev. K
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
SUPPLY CHARACTERISTICS
Limits
Symbol Parameter Min Max. Unit
V
LKO
V
CC
Erase/Write Lock Voltage 2.5 V
V
CC
V
CC
Supply Voltage 4.5 5.5 V
V
PPL
V
PP
During Read Operations 0 6.5 V
V
PPH
V
PP
During Erase/Program 11.4 12.6 V
V
HH
RP, OE Unlock Voltage 11.4 12.6 V
A.C. CHARACTERISTICS, Read Operation
V
CC
= +5V ±10%, unless otherwise specified
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3) Input Rise and Fall Times (10% to 90%) < 10 ns.
(4) Input Pulse Levels = 0.45V and 2.4V. For High Speed Input Pulse Levels 0.0V and 3.0V.
(5) Input and Output Timing Reference = 0.8V and 2.0V. For High Speed Input and Output Timing Reference = 1.5V.
(6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
(7) For load and reference points, see Fig. 1
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
C
L
= 100 pF
OUT
C
L
INCLUDES JIG CAPACITANCE
INPUT PULSE LEVELS REFERENCE POINTS
2.0 V
0.8 V
V
CC
- 0.3V
0.0 V
Figure 1. A.C. Testing Input/Output Waveform
(3)(4)(5)
Testing Load Circuit (example)
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
C
L
= 30 pF
OUT
C
L
INCLUDES JIG CAPACITANCE
INPUT PULSE LEVELS REFERENCE POINTS
3.0 V
0.0 V
1.5 V
Figure 2. Highspeed A.C. Testing Input/Output
Waveform(3)(4)(5)
Testing Load Circuit (example)
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CAT28F001
6
Doc. No. MD-1078, Rev. K
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
A.C. CHARACTERISTICS, Program/Erase Operation
V
CC
= +5V ±10%
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
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HH
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HH
morfdloH EW hgiH
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CAT28F001H-12T

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC FLASH 1M PARALLEL 32TSOP
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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