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MT4LSDT464HG-133G4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
13 ©2004 Micron Technology, Inc. All rights reserved.
Table 11: IDD Specifications and Conditions – 64MB
Notes: 1, 5, 6, 11, 13; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION SYMBOL -13E -133 -10E UNITS NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
t
RC =
t
RC (MIN)
I
DD1 640 600 560 mA 3, 18, 19, 29
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
IDD2 8 88mA 29
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD
met; No accesses in progress
IDD3 200 200 160 mA 3, 12, 19, 29
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
I
DD4 660 600 560 mA 3, 18, 19, 29
AUTO REFRESH CURRENT
t
RFC =
t
RFC (MIN)
I
DD5 1,320 1,240 1,080 mA 3, 12, 18,
19, 29, 30
CKE = HIGH; S# = HIGH
t
RFC = 15.625µs
I
DD6 12 12 12 mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
(Low power not available with industrial
temperature option)
Standard I
DD7 8 88mA 4
Low Power (L) I
DD7 4 44mA
Table 12: IDD Specifications and Conditions – 128MB
Notes: 1, 5, 6, 11, 13; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION SYMBOL -13E -133 -10E UNITS NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
t
RC =
t
RC (MIN)
IDD1 540 500 500 mA 3, 18, 19, 29
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
IDD2 888mA 29
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD
met; No accesses in progress
I
DD3 160 160 160 mA 3, 12, 19, 29
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
I
DD4 540 540 540 mA 3, 18, 19, 29
AUTO REFRESH CURRENT
t
RFC =
t
RFC (MIN)
IDD5 1,140 1,080 1,080 mA 3, 12, 18,
19, 29, 30
CKE = HIGH; S# = HIGH
t
RFC = 7.8125µs
I
DD6 14 14 14 mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
(Low power not available with industrial
temperature option)
Standard I
DD7 10 10 10 mA 4
Low Power (L) IDD7 666mA
32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
14 ©2004 Micron Technology, Inc. All rights reserved.
Table 13: Capacitance
Notes: 1; notes appear on page 16
PARAMETER SYMBOL MIN MAX UNITS
Input Capacitance: Address and Command, CKE, DQMB
C
I1
10 15.2 pF
Input Capacitance: CK
CI2 10 14 pF
Input/Output Capacitance: DQ
C
IO
46pF
Table 14: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11, 32; notes appear on page 16
Module AC timing parameters comply with PC100 and PC133 Design Specs, based on component parameters
AC CHARACTERISTICS -13E -133 -10E
UNITS NOTESPARAMETER SYMBOL MIN MAX MIN MAX MIN MAX
Access time from CLK
(positive edge)
CL = 3
t
AC(3) 5.4 5.4 6 ns 27
CL = 2
t
AC(2) 5.4 6 6 ns
Address hold time
t
AH 0.8 0.8 1 ns
Address setup time
t
AS 1.5 1.5 2 ns
CLK high-level width
t
CH 2.5 2.5 3 ns
CLK low-level width
t
CL 2.5 2.5 3 ns
Clock cycle time CL = 3
t
CK(3) 7 7.5 8 ns 23
CL = 2
t
CK(2) 7.5 10 10 ns 23
CKE hold time
t
CKH 0.8 0.8 1 ns
CKE setup time
t
CKS 1.5 1.5 2 ns
CS#, RAS#, CAS#, WE#, DQM hold time
t
CMH 0.8 0.8 1 ns
CS#, RAS#, CAS#, WE#, DQM setup time
t
CMS 1.5 1.5 2 ns
Data-in hold time
t
DH 0.8 0.8 1 ns
Data-in setup time
t
DS 1.5 1.5 2 ns
Data-out high-impedance time CL = 3
t
HZ(3) 5.4 5.4 6 ns 10
CL = 2
t
HZ(2) 5.4 6 6 ns 10
Data-out low-impedance time
t
LZ 1 1 1 ns
Data-out hold time (load)
t
OH 3 3 3 ns
Data-out hold time (no load)
t
OHN 1.8 1.8 1.8 ns 28
ACTIVE to PRECHARGE command
t
RAS 37 120,000 44 120,000 50 120,000 ns 31
ACTIVE to ACTIVE command period
t
RC 60 66 70 ns
ACTIVE to READ or WRITE delay
t
RCD 15 20 20 ns
Refresh period
t
REF 646464ms
AUTO REFRESH period
t
RFC 66 66 70 ns
PRECHARGE command period
t
RP 15 20 20 ns
ACTIVE bank a to ACTIVE bank b command
t
RRD 14 15 20 ns
Transition time
t
T 0.3 1.2 0.3 1.2 0.3 1.2 ns 7
WRITE recovery time
t
WR
1 CLK
+ 7ns
1 CLK +
7.5ns
1 CLK
+ 7ns
ns 24
14 15 15 ns 25
Exit SELF REFRESH to ACTIVE command
t
XSR
67 75 80 ns 20
32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
15 ©2004 Micron Technology, Inc. All rights reserved.
Table 15: AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11, 32; notes appear on page 16
PARAMETER SYMBOL -13E -133 -10E UNITS NOTES
READ/WRITE command to READ/WRITE command
t
CCD
111
t
CK
17
CKE to clock disable or power-down entry mode
t
CKED
111
t
CK
14
CKE to clock enable or power-down exit setup mode
t
PED
111
t
CK
14
DQM to input data delay
t
DQD
000
t
CK
17
DQM to data mask during WRITEs
t
DQM
000
t
CK
17
DQM to data high-impedance during READs
t
DQZ
222
t
CK
17
WRITE command to input data delay
t
DWD
000
t
CK
17
Data-in to ACTIVE command
t
DAL
454
t
CK
15, 21
Data-in to PRECHARGE command
t
DPL
222
t
CK
16, 21
Last data-in to burst STOP command
t
BDL
111
t
CK
17
Last data-in to new READ/WRITE command
t
CDL
111
t
CK
17
Last data-in to PRECHARGE command
t
RDL
222
t
CK
16, 21
LOAD MODE REGISTER command to ACTIVE or REFRESH command
t
MRD
222
t
CK
26
Data-out to high-impedance from PRECHARGE
command
CL=3
t
ROH(3)
333
t
CK
17
CL = 2
t
ROH(2)
222
t
CK
17
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

MT4LSDT464HG-133G4

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Buy MT4LSDT464HG-133G4
Manufacturer:
Micron
Description:
MODULE SDRAM 32MB 144SODIMM
Lifecycle:
New from this manufacturer.
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