32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
4 ©2004 Micron Technology, Inc. All rights reserved.
Table 5: Pin Descriptions
Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 more information
PIN NUMBERS SYMBOL TYPE DESCRIPTION
65, 66, 67 RAS#, CAS#, WE# Input
Command Inputs: RAS#, CAS#, and WE# (along with S#) define
the command being entered.
61 CK0 Input
Clock: CK is driven by the system clock. All SDRAM input
signals are sampled on the positive edge of CK. CK also
increments the internal burst counter and controls the output
registers.
62 CKE0 Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the
CK signal. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all device banks
idle), ACTIVE POWER-DOWN (row ACTIVE in any device bank)
or CLOCK SUSPEND operation (burst access in progress). CKE is
synchronous except after the device enters power-down and
self refresh modes, where CKE becomes asynchronous until
after exiting the same mode. The input buffers, including CK,
are disabled during power-down and self refresh modes,
providing low standby power.
69 S0# Input
Chip Select: S# enables (registered LOW) and disables
(registered HIGH) the command decoder. All commands are
masked when S# is registered HIGH. S# is considered part of
the command code.
23, 24, 25, 26, 115, 116, 117,
118
DQMB0–DQMB7 Input
Input/Output Mask: DQMB is an input mask signal for write
accesses and an output enable signal for read accesses. Input
data is masked when DQMB is sampled HIGH during a WRITE
cycle. The output buffers are placed in a High-Z state (two-
clock latency) when DQMB is sampled HIGH during a READ
cycle.
106, 110 BA0, BA1 Input
Bank Address: BA0 and BA1 define to which device bank the
ACTIVE, READ, WRITE, or PRECHARGE command is being
applied.
29, 30, 31,32, 33, 34,
70 (128MB), 103, 104, 105,
109, 111, 112
A0–A11
(32MB, 64MB)
A0–A12
(128MB)
Input
Address Inputs: Provide the row address for ACTIVE
commands, and the column address and auto precharge bit
(A10) for READ/WRITE commands, to select one location out
of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether
the PRECHARGE applies to one device bank (A10 LOW, device
bank selected by BA0, BA1) or all device banks (A10 HIGH).
The address inputs also provide the op-code during a MODE
REGISTER SET command.
142 SCL Input
Serial Clock for Presence-Detect: SCL is used to synchronize the
presence-detect data transfer to and from the module.
141 SDA Input/
Output
Serial Presence-Detect Data: SDA is a bidirectional pin used to
transfer addresses and data into and out of the presence-
detect portion of the module.
32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
5 ©2004 Micron Technology, Inc. All rights reserved.
3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15,
16, 17, 18, 19, 20, 37, 38, 39,
40, 41, 43, 44, 47, 48, 49, 50,
51, 52, 53, 54, 83, 84, 85, 86,
87, 88, 89, 90, 93, 94, 95, 96,
97, 98, 99, 100, 121, 122, 123,
124, 125, 126, 127, 128, 131,
132, 133, 134, 135, 136, 137,
138
DQ0–DQ63 Input/
Output
Data I/O: Data bus.
11, 12, 27, 28, 45, 46, 63, 64,
81, 82, 101, 102, 113, 114, 129,
130, 143, 144
V
DD Supply
Power Supply: +3.3V ±0.3V.
1, 2, 21, 22, 35, 36, 55, 56, 75,
76, 91, 92, 107, 108, 119, 120,
139, 140
V
SS Supply
Ground.
70 (32MB, 64MB), 72, 73 NC
Not Connected: These pins should be left unconnected.
57, 58, 59, 60, 68, 71, 74, 77,
78, 79, 80
DNU
Do Not Use: These pins are not connected on these modules,
but are assigned pins on other modules in this product family.
Table 5: Pin Descriptions
Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 more information
PIN NUMBERS SYMBOL TYPE DESCRIPTION
32MB, 64MB, 128MB (x64, SR)
144-PIN SDRAM SODIMM
09005aef80748a77 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD4C4_8_16X64HG.fm - Rev. C 6/04 EN
6 ©2004 Micron Technology, Inc. All rights reserved.
Figure 3: Functional Block Diagram
A0
SPD
U5
SCL
SDA
A1 A2
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQMH
U1
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQMB0
S0#
RAS#
CAS#
CKE0
WE#
CAS#: SDRAMs
CKE0: SDRAMs
WE#: SDRAMs
A0-A11: SDRAMs
A0-A12: SDRAMs
BA0-BA1: SDRAMs
A0-A11 (32MB, 64MB)
A0-A12 (128MB)
BA0-BA1
VDD
VSS
SDRAMs
SDRAMs
U1, U2, U3, U4
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQML CS#
DQMB1
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQMH
U3
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQMB4
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQML CS#
DQMB5
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQMH
U2
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ7
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQMB2
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQML CS#
DQMB3
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQMH
U4
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQMB6
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQML CS#
DQMB7
CK0
RAS#: SDRAMs
10 pf
CK1
WP
Standard modules use the following SDRAM devices
MT48LC4M16A2TG(IT) (32MB); MT48LC8M16A2TG(IT) (64MB);
MT48LC16M16A2TG(IT) (128MB)
Lead-free modules use the following SDRAM devices
MT48LC4M16A2P(IT) (32MB); MT48LC8M16A2P(IT) (64MB);
MT48LC16M16A2P(IT) (128MB)
Industrial Temperature modules use -75-speed components only.
NOTE:
1. All resistor values are 10unless otherwise specified.
2. Per industry standard, Micron modules use various component speed
grades as referenced in the module part numbering guide at:
www.micron.com/support/numbering.html
.

MT4LSDT464HG-133G4

Mfr. #:
Manufacturer:
Micron
Description:
MODULE SDRAM 32MB 144SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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