LTC3879
19
3879f
Other losses, which include the C
OUT
ESR loss, bottom
MOSFET reverse recovery loss and inductor core loss
generally account for less than 2% additional loss.
When making adjustments to improve effi ciency, the input
current is the best indicator of changes in effi ciency. If you
make a change and the input current decreases, then the
effi ciency has increased. If there is no change in input
current there is no change in effi ciency.
Checking Transient Response
The regulator loop response can be checked by look-
ing at the load transient response. Switching regulators
take several cycles to respond to a step in load current.
When a load step occurs, V
OUT
immediately shifts by an
amount equal to ΔI
LOAD
(ESR), where ESR is the effective
series resistance of C
OUT
. ΔI
LOAD
also begins to charge
or discharge C
OUT
, generating a feedback error signal
used by the regulator to return V
OUT
to its steady-state
value. During this recovery time, V
OUT
can be monitored
for overshoot or ringing that would indicate a stability
problem. The I
TH
pin external components shown in the
Design Example will provide adequate compensation for
most applications.
A rough compensation check can be made by calculating
the gain crossover frequency, f
GCO
. g
m(EA)
is the error
amplifi er transconductance, R
C
is the compensation re-
sistor and feedback divider attenuation is assumed to be
0.6V/V
OUT
. This equation assumes that no feed-forward
compensation is used on feedback and that C
OUT
sets the
dominant output pole.
fg R
I
CV
GCO m EA C
LIMIT
OUT OUT
=
()
••
.
••
.
16
1
2
06
π
As a rule of thumb the gain crossover frequency should be
less than 20% of the switching frequency. For a detailed
explanation of switching control loop theory see Applica-
tion Note 76.
High Switching Frequency Operation
Special care should be taken when operating at switch-
ing frequencies greater than 800kHz. At high switching
frequencies there may be an increased sensitivity to
PCB noise which may result in off-time variation greater
than normal. This off-time instability can be prevented
in several ways. First, carefully follow the recommended
layout techniques. Second, use 2μF or more of X5R or
X7R ceramic input capacitance per Amp of load current.
Third, if necessary, increase the bottom MOSFET ripple
voltage to 30mV
P-P
or greater. This ripple voltage is equal
to R
DS(ON)
typical at 25°C • I
P-P
.
Design Example
Figure 10 is a power supply design example with the fol-
lowing specifi cations: V
IN
= 4.5V to 28V (12V nominal),
V
OUT
= 1.2V ±5%, I
OUT(MAX)
= 15A and f = 400kHz. Start
by calculating the timing resistor, R
ON
:
R
V
VkHzpF
k
ON
==
12
0 7 400 10
429
.
.•
Select the nearest standard resistor value of 432k for a
nominal operating frequency of 396kHz. Set the inductor
value to give 35% ripple current at maximum V
IN
using
the adjusted operating frequency:
L
V
kHz A
μH=
=
12
396 0 35 15
1
12
28
055
.
•.
.
.
Select 0.56μH which is the nearest value.
The resulting maximum ripple current is:
ΔI
V
kHz μH
V
V
A
L
=
=
12
396 0 56
1
12
28
51
.
•.
.
.
Choose the synchronous bottom MOSFET switch and
calculate the V
RNG
current limit set-point. To calculate
V
RNG
and V
DS
, the ρτ term normalization factor (unity
APPLICATIONS INFORMATION
LTC3879
20
3879f
at 25°C) is required to account for variation in MOSFET
on-resistance with temperature. Choosing an RJK0330
(R
DS(ON)
= 2.8mΩ (nominal) 3.9mΩ (maximum), V
GS
=
4.5V, θ
JA
= 40°C/W) yields a drain source voltage of:
VI I m
DS LIMIT RIPPLE
=
()
()
–.
1
2
39 Ωρτ
V
RNG
sets current limit by fi xing the maximum peak V
DS
voltage on the bottom MOSFET switch. As a result, the
average DC current limit includes signifi cant temperature
and component variability. Design to guarantee that the
average DC current limit will always exceed the rated oper-
ating output current by assuming worst-case component
tolerance and temperature.
The worst-case minimum INTV
CC
is 5.15V. The bottom
MOSFET worst-case R
DS(ON)
is 3.9mΩ and the junction
temperature is 80°C above a 70°C ambient with ρ
150°C
=
1.5. Set T
ON
equal to the minimum specifi cation of 15%
low and the inductor 15% high.
By setting I
LIMIT
equal to 15A we get 79mV for peak V
DS
voltage which corresponds to a V
RNG
equal to 592mV:
VAA
m
V
DS
=
15
1
2
51
0 85
115
39
515
53
–•.
.
.
.
.
.
Ω
VV
VV
RNG DS
•.
.•
15
75=
Verify that the calculated nominal T
J
is less than the
assumed worst-case T
J
in the bottom MOSFET:
P
VV
V
AmW
T
BOT
J
=
()
=
=
28 12
28
15 15 39 125
70
2
–.
•.•. .Ω
°°+ ° = °CWCW C1 25 40 120.•/
B
ecause the top MOSFET is on for a short time, an
RJK0305DPB (R
DS(ON)
= 10mΩ (nominal) 13mΩ (maxi-
mum), C
MILLER
= Q
GD
/10V = 150pF, V
BOOST
= 5V, V
GS
=
4.5V, V
MILLER
= 3V, θ
JA
= 40°C/W) is suffi cient. Checking its
power dissipation at current limit with = ρ
100°C
= 1.4:
P
V
V
AmV
A
TOP
=
()
+
()
12
28
15 1 4 13 28
15
2
22
.
•.• Ω
()
+
=
150
25
53
12
3
400
018
pF
VV V
kHz
W
.
.
.
ΩΩ
++=
+ ° = °
058 076
70 0 76 40 100
..
.•/
WW
TCWCW C
J
The junction temperatures will be signifi cantly less at
nominal current, but this analysis shows that careful
attention to heat sinking will be necessary.
Select C
IN
to give an RMS current rating greater than 4A
at 85°C. The output capacitor C
OUT1
is chosen for a low
ESR of 4.5mΩ to minimize output voltage changes due to
APPLICATIONS INFORMATION
Figure 10. Design Example: 1.2V/15A at 400kHz
+
TRACK/SS
LTC3879
BOOST
16
C
B
0.22μF
M1
RJK0305DPB
C
VCC
4.7μF
C
C1
220pF
C
C2
33pF
D
B
CMDSH-3
L1
0.56μH
C
OUT1
330μF
2.5V
s2
C
OUT2
47μF
6.3V
s2
+
C
IN1
10μF
50V
s3
C
IN2
100μF
50V
V
OUT
1.2V
15A
3879 F10
V
IN
4.5V TO 28V
1
PGOOD
R
PG
100k
R2
80.6k
R
C
27k
R
FB1
10.0k
R1
10.0k
TG
152
V
RNG
SW
143
MODE PGND
134
I
TH
BG
125
SGND INV
CC
116
I
ON
V
IN
107
V
FB
RUN
98
R
ON
432k
R
FB2
10.0k
M2
RJK0330DPB
C
IN1
: UMK325BJ106MM s3
C
OUT1
: SANYO 2R5TPE330M9 s2
C
OUT2
: MURATA GRM31CR60J476M s2
L1: VISHAY IHLP4040DZ-11 0.56μH
C
SS
0.1μF
LTC3879
21
3879f
inductor ripple current and load steps. The output voltage
ripple is given as:
ΔΔ
Ω
V I ESR
mmV
OUT RIPPLE L MAX()()
.• .
=
()
==51 45 23
However, a 0A to 10A load step will cause an output
change of up to:
ΔΔ
Ω
V I ESR
Am mV
OUT STEP LOAD()
•.
=
()
==10 4 5 45
Optional 2 × 47μF ceramic output capacitors are included
to minimize the effect of ESR and ESL in the output ripple
and to improve load step response.
PC Board Layout Checklist
The LTC3879 PC board layout can be designed with or
without a ground plane. A ground plane is generally pre-
ferred based on performance and noise concerns.
When using a ground plane, use a dedicated ground plane
layer. In addition, for high current it is recommended to
use a multilayer board to help with heat sinking power
components.
l The ground plane layer should have no traces and be
as close as possible to the routing layer connecting the
power MOSFETs.
l Place LTC3879 Pins 9 to 16 facing the power compo-
nents. Keep components connected to Pin 1 close to
LTC3879 (noise sensitive components).
l Place C
IN
, C
OUT
, MOSFETs, D
B
and inductor all in one
compact area. It may help to have some components
on the bottom side of the board.
l Use an immediate via to connect components to the
ground plane SGND and PGND of LTC3879. Use several
larger vias for power components.
l Use compact switch node (SW) plane to improve cool-
ing of the MOSFETs and to keep EMI down.
l Use planes for V
IN
and V
OUT
to maintain good voltage
ltering and to keep power losses low.
l Flood all unused areas on all layers with copper. Flooding
with copper will reduce the temperature rise of power
component. You can connect the copper areas to any
DC net. (V
IN
, V
OUT
, GND or to any other DC rail in your
system).
l Place decoupling capacitor C
C2
next to the I
TH
and SGND
pins with short, direct trace connections.
When laying out a printed circuit board without a ground
plane, use the following checklist to ensure proper op-
eration of the controller. These items are illustrated in
Figure 11.
l Segregate the signal and power grounds. All small-signal
components should return to the SGND pin at one point.
SGND and PGND should be tied together underneath
the IC and then connect directly to the source of M2.
l Place M2 as close to the controller as possible, keeping
the PGND, BG and SW traces short.
l Keep the high dV/dT SW, BOOST and TG nodes away
from sensitive small-signal nodes.
l Connect the input capacitor(s), C
IN
, close to the
power MOSFETs. This capacitor carries the MOSFET AC
current.
l Connect the INTV
CC
decoupling capacitor C
VCC
closely
to the INTV
CC
and PGND pins.
l Connect the top driver boost capacitor, C
B
, closely to
the BOOST and SW pins.
l Connect the V
IN
pin decoupling C
F
closely to the V
IN
and PGND pins.
APPLICATIONS INFORMATION

LTC3879IMSE#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Fast, Wide Operating Range No Rsense Step-Down Controller
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union