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MT16LSDF3264HG-133G4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
10 ©2006 Micron Technology, Inc. All rights reserved.
Operating Mode
The normal operating mode is selected by setting
M7 and M8 to zero; the other combinations of values
for M7 and M8 are reserved for future use and/or test
modes. The programmed burst length applies to both
READ and WRITE bursts.
Test modes and reserved states should not be used
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via M0-
M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
Table 8: CL Table
ALLOWABLE OPERATING
CLOCK FREQUENCY (MHz)
SPEED CL = 2 CL = 3
-13E ≤ 133 < 143
-133 ≤ 100 < 133
-10E ≤ 100 ≤ NA
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
11 ©2006 Micron Technology, Inc. All rights reserved.
Commands
The Truth Table provides a quick reference of avail-
able commands. This is followed by written descrip-
tion of each command. For a more detailed
description of commands and operations, refer to the
128Mb or 256Mb SDRAM component data sheet.
NOTE:
1. A0–A11 (256MB) or A0–A12 (512MB) provide device row address, and BA0, BA1 determine which device bank is made
active.
2. A0–A9 (256MB and 512MB) provide device column address; A10 HIGH enables the auto precharge feature (nonpersis-
tent), while A10 LOW disables the auto precharge feature; BA0, BA1 determine which device bank is being read from or
written to.
3. A10 LOW: BA0, BA1 determine which device bank is being precharged. A10 HIGH: all device banks are precharged and
BA0, BA1 are “Don’t Care.”
4. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
5. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
6. A0–A11 define the op-code written to the mode register; for the 256MB and 512MB, A12 should be driven low.
7. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
Table 9: Truth Table – SDRAM Commands and DQMB Operation
CKE is HIGH for all commands shown except SELF REFRESH
NAME (FUNCTION) CS# RAS# CAS# WE# DQMB ADDR DQ NOTES
COMMAND INHIBIT (NOP)
HXXX X X X
NO OPERATION (NOP)
LHHH X X X
ACTIVE (select bank and activate row)
L L H H X Bank/Row X 1
READ (select bank and column, and start READ burst)
LH L H
L/H
8
Bank/Col X 2
WRITE (select bank and column, and start WRITE burst)
LH L L
L/H
8
Bank/Col Valid 2
BURST TERMINATE
LH H L X X Active
PRECHARGE (deactivate row in bank or banks)
LL H L X Code X 3
AUTO REFRESH or SELF REFRESH
(enter self refresh mode)
LL L H X X X 4, 5
LOAD MODE REGISTER
LLLL XOp-codeX 6
Write enable/output enable
–––– L –Active7
Write inhibit/output High-Z
–––– H –High-Z7
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
12 ©2006 Micron Technology, Inc. All rights reserved.
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Voltage on V
DD Supply,
Relative to V
SS . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Operating Temperature,
T
OPR
(Commercial - ambient) . . . . . .0°C to +65°C
Storage Temperature (plastic) . . . . . . -55°C to +125°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES
Supply voltage
V
DD, VDDQ3 3.6 V
Input high voltage: Logic 1; All inputs
V
IH 2VDD + 0.3 V 22
Input low voltage: Logic 0; All inputs
V
IL –0.3 0.8 V 22
Input leakage current:
Any input 0V ≤ V
IN ≤ VDD
(All other pins not under test = 0V)
Command and
Address Inputs
II
–80 80
µA 33
CK, CKE, S#
–40 40
DQMB
–10 10
Output leakage current: DQ pins are disabled;
0V ≤ V
OUT ≤ VDDQ
DQ
I
OZ –10 10 µA 33
Output levels:
Output High Voltage (I
OUT = -4mA)
Output Low Voltage (IOUT = 4mA)
V
OH 2.4 – V
V
OL –0.4V
Table 11: IDD Specifications and Conditions – 256MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION SYMBOL -13E -133 -10E UNITS NOTES
Operating current: Active mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
I
DD1
a
1,296 1,216 1,136 mA 3, 17, 19, 32
Standby current: Power-down mode; All device banks idle;
CKE = LOW
I
DD2
b
32 32 32 mA 32
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD
met; No accesses in progress
I
DD3
a
416 416 336 mA 3, 12, 19, 32
Operating current: Burst mode; Continuous burst; READ or
WRITE; All device banks active
I
DD4
a
1,336 1,216 1,136 mA 3, 18, 19, 32
Auto refresh current
CKE = HIGH; S# = HIGH
t
RFC =
t
RFC (MIN)
I
DD5
b
5,280 4,960 4,320 mA 3, 12, 18, 19,
32,30
t
RFC = 15.625µs
I
DD6
b
48 48 48 mA
Self refresh current: CKE ≤ 0.2V Standard
IDD7
b
32 32 32 mA 4
Low power (L)
I
DD7
b
16 16 16 mA
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

MT16LSDF3264HG-133G4

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Buy MT16LSDF3264HG-133G4
Manufacturer:
Micron
Description:
MODULE SDRAM 256MB 144SODIMM
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New from this manufacturer.
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