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MT16LSDF3264HG-133G4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
13 ©2006 Micron Technology, Inc. All rights reserved.
Table 12: IDD Specifications and Conditions – 512MB
Notes: 1, 5, 6, 11, 13; SDRAM components only; notes appear on page 16; VDD, VDDQ = +3.3V ±0.3V
MAX
PARAMETER/CONDITION SYMBOL -13E -133 -10E UNITS NOTES
Operating current: Active mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
IDD1
a
1,096 1,016 1,016 mA 3, 17,19, 32
Standby current: Power-down mode; All device banks idle;
CKE = LOW
I
DD2
b
32 32 32 mA 32
STANDBY CURRENT: Active mode;
CKE = HIGH; CS# = HIGH; All device banks active after
t
RCD
met; No accesses in progress
I
DD3
a
336 336 336 mA 3, 12, 19, 32
OPERATING CURRENT: Burst mode; Continuous burst; READ
or WRITE; All device banks active
I
DD4
a
1,096 1,096 1,096 mA 3, 18, 19, 32
Auto refresh current
CKE = HIGH; S# = HIGH
t
RFC =
t
RFC (MIN)
I
DD5
b
4,560 4,320 4,320 mA 3, 12, 18, 19,
32,30
t
RFC = 7.8125µs
IDD6
b
56 56 56 mA
Self refresh current: CKE < 0.2V
Standard
IDD7
b
40 40 40 mA 4
Low power (L)
IDD7
b
24 24 24 mA
a - Value calculated as one module rank in this operating condition, and all other ranks in power-down mode.
b - Value calculated reflects all module ranks in this operation condition.
Table 13: Capacitance
Note 2; notes appear on page 16
PARAMETER SYMBOL MIN MAX UNITS
Input capacitance: Address and command
C
I1 40 60.8 pF
Input capacitance: CK
C
I2 20 28 pF
Input capacitance: CKE, S#
C
I3 20 30.4 pF
Input capacitance: DQMB
C
I4 57.6pF
Input/output capacitance: DQ
C
IO 812pF
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
14 ©2006 Micron Technology, Inc. All rights reserved.
Table 14: Electrical Characteristics and Recommended AC Operating Conditions
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 16; comply with PC100 and PC133 specifications, based on SDRAM device
AC CHARACTERISTICS -13E -133 -10E
PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX UNITS NOTES
Access time from
CLK (positive edge)
CL = 3
t
AC(3)
5.4 5.4 6 ns 27
CL = 2
t
AC(2)
5.4 6 6 ns
Address hold time
t
AH
0.8 0.8 1 ns
Address setup time
t
AS
1.5 1.5 2 ns
CLK high-level width
t
CH
2.5 2.5 3 ns
CLK low-level width
t
CL
2.5 2.5 3 ns
Clock cycle time CL = 3
t
CK(3)
77.58 ns23
CL = 2
t
CK(2)
7.5 10 10 ns 23
CKE hold time
t
CKH
0.8 0.8 1 ns
CKE setup time
t
CKS
1.5 1.5 2 ns
CS#, RAS#, CAS#, WE#, DQM hold
time
t
CMH
0.8 0.8 1 ns
CS#, RAS#, CAS#, WE#, DQM setup
time
t
CMS
1.5 1.5 2 ns
Data-in hold time
t
DH
0.8 0.8 1 ns
Data-in setup time
t
DS
1.5 1.5 2 ns
Data-out High-Z time CL = 3
t
HZ(3)
5.4 5.4 6 ns 10
CL = 2
t
HZ(2)
5.4 6 6 ns 10
Data-out Low-Z time
t
LZ
111 ns
Data-out hold time (load)
t
OH
333 ns
Data-out hold time (no load)
t
OHN
1.8 1.8 1.8 ns 28
ACTIVE-to-PRECHARGE command
t
RAS
37 120,000 44 120,000 50 120,000 ns 32
ACTIVE-to-ACTIVE command period
t
RC
60 66 70 ns
ACTIVE-to-READ or WRITE delay
t
RCD
15 20 20 ns
Refresh period
t
REF
64 64 64 ms
AUTO REFRESH period
t
RFC
66 66 70 ns
PRECHARGE command period
t
RP
15 20 20 ns
ACTIVE bank a to ACTIVE bank b
command
t
RRD
14 15 20 ns
Transition time
t
T
0.3 1.2 0.3 1.2 0.3 1.2 ns 7
WRITE recovery time
t
WR
1 CLK
+ 7ns
1 CLK +
7.5ns
1 CLK
+ 7ns
ns 24
14 15 15 ns 25
Exit SELF REFRESH to ACTIVE
command
t
XSR
67 75 80 ns 20
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
15 ©2006 Micron Technology, Inc. All rights reserved.
Table 15: AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11, 31; notes appear on page 16; comply with PC100 and PC133 specifications, based on SDRAM device
PARAMETER SYMBOL -13E -133 -10E UNITS NOTES
READ/WRITE command to READ/WRITE command
t
CCD
111
t
CK
17
CKE to clock disable or power-down entry mode
t
CKED
111
t
CK
14
CKE to clock enable or power-down exit setup mode
t
PED
111
t
CK
14
DQM to input data delay
t
DQD
000
t
CK
17
DQM to data mask during WRITEs
t
DQM
000
t
CK
17
DQM to data High-Z during READs
t
DQZ
222
t
CK
17
WRITE command to input data delay
t
DWD
000
t
CK
17
Data-in to ACTIVE command
t
DAL
454
t
CK
15, 21
Data-in to PRECHARGE command
t
DPL
222
t
CK
16, 21
Last data-in to burst STOP command
t
BDL
111
t
CK
17
Last data-in to new READ/WRITE command
t
CDL
111
t
CK
17
Last data-in to PRECHARGE command
t
RDL
222
t
CK
16, 21
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
t
MRD
222
t
CK
26
Data-out to High-Z from PRECHARGE command
CL = 3
t
ROH(3)
333
t
CK
17
CL = 2
t
ROH(2)
222
t
CK
17
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

MT16LSDF3264HG-133G4

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Buy MT16LSDF3264HG-133G4
Manufacturer:
Micron
Description:
MODULE SDRAM 256MB 144SODIMM
Lifecycle:
New from this manufacturer.
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