256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
19 ©2006 Micron Technology, Inc. All rights reserved.
NOTE:
1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1 and the falling or rising
edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write sequence to the end of
the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
Table 18: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = 2.3V to 3.6V
PARAMETER/CONDITION SYMBOL MIN MAX UNITS
Supply voltage
V
DD 33.6V
Input high voltage: Logic 1; All inputs
V
IH VDD × 0.7 VDD × 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –1 VDD × 0.3 V
Output low voltage: I
OUT = 3mA
VOL –0.4V
Input leakage current: V
IN = GND to VDD
ILI –10µA
Output leakage current: V
OUT = GND to VDD
ILO –10µA
Standby current: SCL = SDA = V
DD - 0.3V; All other inputs = GND or 3.3V ±10%
ISB –30µA
Power supply current: SCL clock frequency = 100 KHz
I
CC –2mA
Table 19: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = 2.3V to 3.6V
PARAMETER/CONDITION SYMBOL MIN MAX UNITS NOTES
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F300ns2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R0.3µs2
SCL clock frequency
f
SCL 400 KHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
20 ©2006 Micron Technology, Inc. All rights reserved.
Table 20: Serial Presence-Detect Matrix
1/0: Serial Data, driven to HIGH/driven to LOW; VDD = +3.3V ±0.3V
BYTE DESCRIPTION ENTRY (VERSION) MT16LSDF3264H MT16LSDF6464H
0
Number of bytes used by Micron
128 80 80
1
Total number of SPD memory bytes
256 08 08
2
Memory type
SDRAM 04 04
3
Number of row addresses
12 or 13 0C 0D
4
Number of column addresses
10 0A 0A
5
Number of banks
202 02
6
Module data width
64 40 40
7
Module data width (continued)
000 00
8
Module voltage interface levels
LVTTL 01 01
9
SDRAM cycle time,
t
CK
(CL = 3)
7ns (-13E)
7.5ns (-133)
8ns (-10E)
70
75
80
70
75
80
10
SDRAM access from clock,
t
AC
(CL = 3)
5.4ns (-13E/-133)
6ns (-10E)
54
60
54
60
11
Module configuration type
NONE 00 00
12
Refresh rate/type
15.6µs
or 7.81µs/self
80 82
13
SDRAM width (primary SDRAM)
808 08
14
Error-checking SDRAM data width
00 00
15
MIN clock delay from back-to-back random
column addresses,
t
CCD
101 01
16
Burst lengths supported
1, 2, 4, 8, page 8F 8F
17
Number of banks on SDRAM device
404 4
18
CAS latencies supported
2, 3 06 6
19
CS latency
001 01
20
WE latency
001 01
21
SDRAM module attributes
Unbuffered 00 00
22
SDRAM device attributes: General
14 0E 0E
23
SDRAM cycle time,
t
CK
(CL = 2)
7.5ns (13E)
10ns (-133/-10E)
75
A0
75
A0
24
SDRAM access from CLK,
t
AC
(CL = 2)
5.4ns (-13E)
6ns (-133/-10E)
54
60
54
60
25
SDRAM cycle time,
t
CK
(CL = 1)
–00 00
26
SDRAM access from CLK,
t
AC
(CL = 1)
–00 00
27
MIN row precharge time,
t
RP
15ns (-13E)
20ns (-133/-10E)
0F
14
0F
14
28
MIN row active-to-row active,
t
RRD
14ns (-13E)
15ns (-133)
20ns (-10E)
0E
0F
14
0E
0F
14
29
MIN RAS#-to-CAS# delay,
t
RCD
15ns (-13E)
20ns (-133/-10E)
0F
14
0F
14
30
MIN RAS# pulse width,
t
RAS
45ns (-13E)
44ns (133)
50ns (-10E)
2D
2C
32
2D
2C
32
256MB, 512MB (x64, DR)
144-PIN SDRAM SODIMM
pdf: 09005aef807924d2, source: 09005aef807924f1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
21 ©2006 Micron Technology, Inc. All rights reserved.
NOTE:
1. The value of
t
RAS used for the -13E module is calculated from
t
RC -
t
RP. Actual device spec value is 37ns.
31
Module rank density
128MB or 256MB 20 40
32
Command and address setup time,
t
AS,
t
CMS
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
33
Command and address hold time,
t
AH,
t
CMH
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
34
Data signal input setup time,
t
DS
1.5ns (-13E/-133)
2ns (-10E)
15
20
15
20
35
Data signal input hold time,
t
DH
0.8ns (-13E/-133)
1ns (-10E)
08
10
08
10
36–40
Reserved
00 00
41
Device MIN ACTIVE/AUTO-REFRESH time,
t
RC
66ns (-13E)
71ns (-133)
66ns (-10E)
3C
42
46
3C
42
46
42–61
Reserved
00 00
62
SPD revision
REV. 2.0 02 02
63
Checksum for bytes 0-62
(-13E)
(-133)
(-10E)
95
E1
2D
B8
04
50
64
Manufacturer’s JEDEC ID code
MICRON 2C 2C
65–71
Manufacturer’s JEDEC ID code (continued)
FF FF
72
Manufacturing location
1–12 01–0C 01– 0C
73–90
Module part number (ASCII)
Variable Data Variable Data
91
PCB identification code
1–9 01–09 01–09
92
Identification code (continued)
000 00
93
Year of manufacture in BCD
Variable Data Variable Data
94
Week of manufacture in BCD
Variable Data Variable Data
95-98
Module serial number
Variable Data Variable Data
99–125
Manufacturer-specific data (RSVD)
126
System frequency
100 MHz/133 MHz
(-13E/-133/-10E)
64 64
127
SDRAM component and clock detail
CF CF
Table 20: Serial Presence-Detect Matrix (Continued)
1/0: Serial Data, driven to HIGH/driven to LOW; VDD = +3.3V ±0.3V
BYTE DESCRIPTION ENTRY (VERSION) MT16LSDF3264H MT16LSDF6464H

MT16LSDF3264HG-133G4

Mfr. #:
Manufacturer:
Micron
Description:
MODULE SDRAM 256MB 144SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
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