NX3L1T53 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 23 January 2013 7 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
11.1 Test circuits
11.2 ON resistance
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V.
Fig 6. Test circuit for measuring OFF-state leakage current
V
O
I
S
001aad390
S
Z
E
Y0
Y1
V
CC
GND
switch
switch
1
1
2
2
V
IH
V
IL
S
V
IH
V
IH
E
V
I
V
IL
or V
IH
V
IH
V
I
=0.3VorV
CC
0.3 V; V
O
= open circuit.
Fig 7. Test circuit for measuring ON-state leakage current
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9
to Figure 15.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
R
ON(peak)
ON resistance (peak) V
I
=GNDtoV
CC
;
I
SW
= 100 mA;
see Figure 8
V
CC
= 1.4 V - 1.6 3.7 - 4.1
V
CC
= 1.65 V - 1.0 1.6 - 1.7
V
CC
= 2.3 V - 0.55 0.8 - 0.9
V
CC
=2.7V - 0.5 0.75 - 0.9
V
CC
=4.3V - 0.5 0.75 - 0.9
NX3L1T53 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 23 January 2013 8 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
[1] Typical values are measured at T
amb
= 25 C.
[2] Measured at identical V
CC
, temperature and input voltage.
[3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
CC
and
temperature.
11.3 ON resistance test circuit and waveforms
R
ON
ON resistance mismatch
between channels
V
I
=GNDtoV
CC
;
I
SW
= 100 mA
[2]
V
CC
= 1.4 V - 0.04 0.3 - 0.3
V
CC
= 1.65 V - 0.04 0.2 - 0.3
V
CC
= 2.3 V - 0.02 0.08 - 0.1
V
CC
= 2.7 V - 0.02 0.075 - 0.1
V
CC
= 4.3 V - 0.02 0.075 - 0.1
R
ON(flat)
ON resistance (flatness) V
I
=GNDtoV
CC
;
I
SW
= 100 mA
[3]
V
CC
= 1.4 V - 1.0 3.3 - 3.6
V
CC
= 1.65 V - 0.5 1.2 - 1.3
V
CC
= 2.3 V - 0.15 0.3 - 0.35
V
CC
= 2.7 V - 0.13 0.3 - 0.35
V
CC
= 4.3 V - 0.2 0.4 - 0.45
Table 8. ON resistance …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
R
ON
= V
SW
/ I
SW
.
Fig 8. Test circuit for measuring ON resistance
S
E
Z
Y0
V
IL
or V
IH
V
CC
V
IL
switch
1
2V
IH
V
IL
S
V
IL
V
IL
E
V
I
V
001aah456
Y1
V
SW
switch
GND
1
2
I
SW
NX3L1T53 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 8 — 23 January 2013 9 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
(1) V
CC
=1.5V.
(2) V
CC
=1.8V.
(3) V
CC
=2.5V.
(4) V
CC
=2.7V.
(5) V
CC
=3.3V.
(6) V
CC
=4.3V.
Measured at T
amb
=25C.
Fig 9. ON resistance as a function of input voltage
V
I
(V)
054312
001aag564
0.8
0.4
1.2
1.6
R
ON
(Ω)
0
(1)
(2)
(5)
(6)
(4)
(3)
(1) T
amb
= 125 C.
(2) T
amb
=85C.
(3) T
amb
=25C.
(4) T
amb
= 40 C.
(1) T
amb
= 125 C.
(2) T
amb
=85C.
(3) T
amb
=25C.
(4) T
amb
= 40 C.
Fig 10. ON resistance as a function of input voltage;
V
CC
=1.5V
Fig 11. ON resistance as a function of input voltage;
V
CC
=1.8V
001aag565
V
I
(V)
0321
0.8
0.4
1.2
1.6
R
ON
(Ω)
0
(1)
(2)
(3)
(4)
001aag566
V
I
(V)
0321
0.4
0.6
0.2
0.8
1.0
R
ON
(Ω)
0
(1)
(2)
(3)
(4)

NX3L1T53GM,125

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs 1SW SPDT 4.3V 60MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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