NCP81080
www.onsemi.com
4
Table 5. ELECTRICAL CHARACTERISTICS
Unless otherwise stated: T
A
= T
J
= −40°C to 140°C; VDD = VHB = 12 V, VHS = VSS = 0 V, No load on LO or HO
Parameter UnitsMaxTypMinTest Condition
HO GATE DRIVER
V
HOL
Low level output voltage I
HO
= 100 mA 0.3 1.2
V
V
HOH
High level output voltage I
HO
= −100 mA, V
HOH
= V
HB
−V
HO
0.71 1.6
Peak Pull−Up Current V
HO
= 0 V 0.55
A
Peak Pull−Down Current V
HO
= 12 V 0.8
R
O,
Unbiased
HB – HS = 0 V 20k
W
PROPAGATION DELAYS
t
DLFF
PWM falling to VLO falling C
LOAD
= 0 30
ns
tDHFF PWM falling to VHO falling C
LOAD
= 0 30
tDLRR PWM rising to VLO rising C
LOAD
= 0 44
tDHRR PWM rising to VHO rising C
LOAD
= 0 44
DEAD−TIME
Fixed Deadtime
Internal Fixed Dead−Time 135 ns
DEAD−TIME MATCHING
t
DTM
LI OFF, HI ON 10 ns
OUTPUT RISE AND FALL TIME
t
R
LO, HO C
LOAD
= 1000 pF 19
ns
t
F
LO, HO C
LOAD
= 1000 pF 17
MISCELLANEOUS
Minimum input pulse width that
changes the output
30
ns
Bootstrap diode turn−off time I
F
= 20 mA, I
REV
= 0.5 A
(Notes 1, 2)
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Typical values for T
A = 25°C
2. I
F: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode.
