PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
1 ©2001 Micron Technology, Inc. All rights reserved.
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F008B3
MT28F800B3
3V ONLY, DUAL SUPPLY (SMART 3)
FEATURES
• Eleven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Eight main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V VCC
3.3V ±0.3V VPP application programming
5V ±10%
VPP application/production programming1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 90ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP, SOP and FBGA packaging options
• Byte- or word-wide READ and WRITE
(MT28F800B3): 1 Meg x 8/512K x 16
NOTE: 1. This generation of devices does not support 12V
V
PP production programming; however, 5V VPP
application production programming can be
used with no loss of performance.
2. Contact Factory for availability
Part Number Example:
MT28F800B3WG-9
GENERAL DESCRIPTION
The MT28F008B3 (x8) and MT28F800B3 (x16/x8)
are low-voltage, nonvolatile, electrically block-eras-
able (flash), programmable memory devices contain-
ing 8,388,608 bits organized as 524,288 words (16 bits)
or 1,048,576 bytes (8 bits). Writing and erasing the
device is done with a V
PP voltage of either 3.3V or 5V,
while all operations are performed with a 3.3V V
CC.
Due to process technology advances, 5V V
PP is optimal
for application and production programming. These
devices are fabricated with Micron’s advanced 0.18µm
CMOS floating-gate process.
The MT28F008B3 and MT28F800B3 are organized
into eleven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. This block may be used to store code
implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Refer to Micron’s Web site (www.micron.com/flash)
for the latest data sheet.
Options Marking
• Timing
90ns access -9
• Configurations
1 Meg x 8
512K x 16/1 Meg x 8
MT28F008B3
MT28F800B3
• Boot Block Starting Word Address
Top (7FFFFh)
Bottom (00000h)
T
B
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
None
ET
• Packages
MT28F008B3
Plastic 40-pin (standard) TSOP Type I
Plastic 40-pin (lead free) TSOP Type I
MT28F800B3
Plastic 48-pin (standard) TSOP Type I
Plastic 48-pin (lead free) TSOP Type I
Plastic 44-pin (standard) SOP
Plastic 44-pin (lead free) SOP
VG
VP
WG
WP
SG
2
SP
2
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
