8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
09005aef81136a91 Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q10.fm - Rev. E 6/04 EN
24 ©2001 Micron Technology, Inc. All rights reserved.
NOTE:
1. Measured with VPP = VPPH1 = 3.3V.
2. Measured with VPP = VPPH2 = 5V.
3. RP# should be held at V
HH or WP# held HIGH until boot block WRITE or ERASE is complete.
4. Polling status register before tWB is met may falsely indicate WRITE or ERASE completion.
5. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
6. tREL is required to relock boot block after WRITE or ERASE to boot block.
7. Typical values measured at T
A
= +25ºC.
8. Assumes no system overhead.
9. Typical WRITE times use checkerboard data pattern.
Table 15: Speed-Dependent WRITE/ERASE AC Timing Characteristics and
Recommended AC Operating Conditions: WE# (CE#)-Controlled WRITEs
Commercial Temperature (0°C ≤ T
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
A
≤ +85°C); Vcc = +3.3V ±0.3V
ACCHARACTERISTICS
SYMBOL
-9/-9 ET
UNITS NOTESPARAMETER MIN MAX
WRITE cycle time
t
WC
90 ns
WE# (CE#) HIGH pulse width
t
WPH (
t
CPH)
20 ns
WE# (CE#) pulse width
t
WP (
t
CP)
50 ns
Address setup time to WE# (CE#) HIGH
t
AS
50 ns
Address hold time from WE# (CE#) HIGH
t
AH
0ns
Data setup time to WE# (CE#) HIGH
t
DS
50 ns
Data hold time from WE# (CE#) HIGH
t
DH
0ns
CE# (WE#) setup time to WE# (CE#) LOW
t
CS (
t
WS)
0ns
CE# (WE#) hold time from WE# (CE#) HIGH
t
CH (
t
WH)
0ns
V
PP setup time to WE# (CE#) HIGH
t
VPS1
200 ns 1
V
PP setup time to WE# (CE#) HIGH
t
VPS2
100 ns 2
RP# HIGH to WE# (CE#) LOW delay
t
RS
1,000 ns
RP# at V
HH or WP# HIGH setup time to WE# (CE#) HIGH
t
RHS
100 ns 3
WRITE duration (WORD or BYTE WRITE)
t
WED1
2µs5
Boot BLOCK ERASE duration
t
WED2
100 ms 5
Parameter BLOCK ERASE duration
t
WED3
100 ms 5
Main BLOCK ERASE duration
t
WED4
500 ms 5
WE# (CE#) HIGH to busy status (SR7 = 0)
t
WB
200 ns 4
V
PP hold time from status data valid
t
VPH
0ns5
RP# at V
HH or WP# HIGH hold time from status data valid
t
RHH
0ns3
Boot block relock delay time
t
REL
100 ns 6
Table 16: Word/Byte WRITE and ERASE Duration Characteristics
PARAMETER
3.3V VPP 5V VPP
UNITS NOTESTYP MAX TYP MAX
Boot/parameter BLOCK ERASE time
0.5 7 0.4 7 s 7
Main BLOCK ERASE time
2.8141.514 s 7
Main BLOCK WRITE time (byte mode)
1.5 – 1 – s 7, 8, 9
Main BLOCK WRITE time (word mode)
1.5 – 1 – s 7, 8, 9
