8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
09005aef81136a91 Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q10.fm - Rev. E 6/04 EN
7 ©2001 Micron Technology, Inc. All rights reserved.
Functional Description
The MT28F800B3 and MT28F008B3 Flash devices
incorporate a number of features ideally suited for sys-
tem firmware. The memory array is segmented into
individual erase blocks. Each block may be erased
without affecting data stored in other blocks. These
memory blocks are read, written and erased with com-
mands to the command execution logic (CEL). The
CEL controls the operation of the internal state
machine (ISM), which completely controls all WRITE,
BLOCK ERASE and VERIFY operations. The ISM pro-
tects each memory location from over-erasure and
optimizes each memory location for maximum data
retention. In addition, the ISM greatly simplifies the
control necessary for writing the device insystem or in
an external programmer.
The Functional Description provides detailed infor-
mation on the operation of the MT28F800B3 and
MT28F008B3 and is organized into these sections:
•Overview
Memory Architecture
Output (READ) Operations
Input Operations
•Command Set
ISM Status Register
•Command Execution
Error Handling
WRITE/ERASE Cycle Endurance
•Power Usage
•Power-Up
Overview
Smart 3 Technology (B3)
Smart 3 operation allows maximum flexibility for
insystem READ, WRITE and ERASE operations. WRITE
and ERASE operations may be executed with a V
PP
voltage of 3.3V or 5V. Due to process technology
advances, 5V V
PP is optimal for application and pro-
duction programming.
Eleven Indeoendently Erasable Memory
Blocks
The MT28F800B3 and MT28F008B3 are organized
into eleven independently erasable memory blocks
that allow portions of the memory to be erased with-
out affecting the rest of the memory data. A special
boot block is hardware-protected against inadvertent
erasure or writing by requiring either a super-voltage
on the RP# pin or driving the WP# pin HIGH. (The WP#
pin does not apply to the SOP package.) One of these
two conditions must exist along with the V
PP voltage
(3.3V or 5V) on the V
PP pin before a WRITE or ERASE is
performed on the boot block. The remaining blocks
require that only the V
PP voltage be present on the VPP
pin before writing or erasing.
Hardware-Protected Boot block
This block of the memory array can be erased or
written only when the RP# pin is taken to V
HH or when
the WP# pin is brought HIGH. (The WP# pin does not
apply to the SOP package.) This provides additional
security for the core firmware during in-system firm-
ware updates should an unintentional power fluctua-
tion or system reset occur. The MT28F800B3 and
MT28F008B3 are available with the boot block starting
at the bottom of the address space (“B” suffix) and the
top of the address space (“T” suffix).
Selectable Bus Size (MT28F800B3)
The MT28F800B3 allows selection of an 8-bit (1 Meg
x 8) or 16-bit (512K x 16) data bus for reading and writ-
ing the memory. The BYTE# pin is used to select the
bus width. In the x16 configuration, control data is
read or written only on the lower eight bits (DQ0–
DQ7).
Data written to the memory array utilizes all active
data pins for the selected configuration. When the x8
configuration is selected, data is written in byte form;
when the x16 configuration is selected, data is written
in word form.
Internal State Machine (ISM)
BLOCK ERASE and BYTE/WORD WRITE timing are
simplified with an ISM that controls all erase and write
algorithms in the memory array. The ISM ensures pro-
tection against overerasure and optimizes write mar-
gin to each cell.
During WRITE operations, the ISM automatically
increments and monitors WRITE attempts, verifies
write margin on each memory cell and updates the
ISM status register. When BLOCK ERASE is performed,
the ISM automatically overwrites the entire addressed
block (eliminates overerasure), increments and moni-
tors ERASE attempts, and sets bits in the ISM status
register.
ISM Status Register
The ISM status register enables an external proces-
sor to monitor the status of the ISM during WRITE and
ERASE operations. Two bits of the 8-bit status register
are set and cleared entirely by the ISM. These bits indi-
cate whether the ISM is busy with an ERASE or WRITE
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
09005aef81136a91 Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q10.fm - Rev. E 6/04 EN
8 ©2001 Micron Technology, Inc. All rights reserved.
task and when an ERASE has been suspended. Addi-
tional error information is set in three other bits: V
PP
status, write status and erase status.
Command Execution Logic (CEL)
The CEL receives and interprets commands to the
device. These commands control the operation of the
ISM and the read path (i.e., memory array, ID register
or status register). Commands may be issued to the
CEL while the ISM is active. However, there are restric-
tions on what commands are allowed in this condition.
See the Command Execution section for more detail.
Deep Power-Down Mode
To allow for maximum power conservation, the
MT28F800B3 and MT28F008B3 feature a very low
current, deep power-down mode. To enter this mode,
the RP# pin is taken to V
SS ±0.2V. In this mode, the cur-
rent draw is a maximum of 8µA at 3.3V V
CC. Entering
deep power-down also clears the status register and
sets the ISM to the read array mode.
Memory Architecture
The MT28F800B3 and MT28F008B3 memory array
architecture is designed to allow sections to be erased
without disturbing the rest of the array. The array is
divided into eleven addressable blocks that vary in size
and are independently erasable. When blocks rather
than the entire array are erased, total device endur-
ance is enhanced, as is system flexibility. Only the
ERASE function is block-oriented. All READ and
WRITE operations are done on a random-access basis.
The boot block is protected from unintentional
ERASE or WRITE with a hardware protection circuit
which requires that a super-voltage be applied to RP#
or that the WP# pin be driven HIGH before erasure is
commenced. The boot block is intended for the core
firmware required for basic system functionality. The
remaining ten blocks do not require that either of
these two conditions be met before WRITE or ERASE
operations.
Boot Block
The hardware-protected boot block provides extra
security for the most sensitive portions of the firm-
ware. This 16KB block may only be erased or written
when the RP# pin is at the specified boot block unlock
voltage (V
HH) of 12V or when the WP# pin is HIGH.
During a WRITE or ERASE of the boot block, the RP#
pin must be held at V
HH or the WP# pin held HIGH
until the WRITE or ERASE is completed. (The WP# pin
does not apply to the SOP package.) The V
PP pin must
be at V
PPH (3.3V or 5V) when the boot block is written
to or erased.
The MT28F800B3 and MT28F008B3 are available
in two configurations and top or bottom boot block.
The top boot block version supports processors of the
x86 variety. The bottom boot block version is
intended for 680X0 and RISC applications. Figure 3
illustrates the memory address maps associated with
these two versions.
Figure 3: Memory Address Maps
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
96KB Main Block
8KB Parameter Block
8KB Parameter Block
16KB Boot Block
BYTE ADDRESS
FFFFFh
E0000h
DFFFFh
C0000h
BFFFFh
A0000h
9FFFFh
80000h
7FFFFh
60000h
5FFFFh
40000h
3FFFFh
20000h
1FFFFh
08000h
07FFFh
06000h
05FFFh
04000h
03FFFh
00000h
7FFFFh
70000h
6FFFFh
60000h
5FFFFh
50000h
4FFFFh
40000h
3FFFFh
30000h
2FFFFh
20000h
1FFFFh
10000h
0FFFFh
04000h
03FFFh
03000h
02FFFh
02000h
01FFFh
00000h
WORD ADDRESS
FFFFFh
FC000h
FBFFFh
FA000h
F9FFFh
F8000h
F7FFFh
E0000h
DFFFFh
C0000h
BFFFFh
A0000h
9FFFFh
80000h
7FFFFh
60000h
5FFFFh
40000h
3FFFFh
20000h
1FFFFh
00000h
16KB Boot Block
8KB Parameter Block
8KB Parameter Block
96KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
BYTE ADDRESS
7FFFFh
7E000h
7DFFFh
7D000h
7CFFFh
7C000h
7BFFFh
70000h
6FFFFh
60000h
5FFFFh
50000h
4FFFFh
40000h
3FFFFh
30000h
2FFFFh
20000h
1FFFFh
10000h
0FFFFh
00000h
WORD ADDRESS
Bottom Boot
MT28F008B3/800B3xx-xxB
Top Boot
MT28F008B3/800B3xx-xxT
8Mb
SMART 3 BOOT BLOCK FLASH MEMORY
09005aef81136a91 Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q10.fm - Rev. E 6/04 EN
9 ©2001 Micron Technology, Inc. All rights reserved.
Parameter Blocks
The two 8KB parameter blocks store less sensitive
and more frequently changing system parameters and
also may store configuration or diagnostic coding.
These blocks are enabled for erasure when the V
PP pin
is at V
PPH. No super-voltage unlock or WP# control is
required.
Main Memory Blocks
The eight remaining blocks are general-purpose
memory blocks and do not require a super-voltage on
RP# or WP# control to be erased or written. These
blocks are intended for code storage, ROM-resident
applications or operating systems that require in-sys-
tem update capability.
Output (READ) Operations
The MT28F800B3 and MT28F008B3 feature three
different types of READs. Depending on the current
mode of the device, a READ operation produces data
from the memory array, status register or device iden-
tification register. In each of these three cases, the
WE#, CE# and OE# inputs are controlled in a similar
manner. Moving between modes to perform a specific
READ is described in the Command Execution section.
Memory Array
To read the memory array, WE# must be HIGH, and
OE# and CE# must be LOW. Valid data is output on the
DQ pins when these conditions have been met, and a
valid address is given. Valid data remains on the DQ
pins until the address changes, or until OE# or CE#
goes HIGH, whichever occurs first. The DQ pins con-
tinue to output new data after each address transition
as long as OE# and CE# remain LOW.
The MT28F800B3 features selectable bus widths.
When the memory array is accessed as a 512K x 16,
BYTE# is HIGH, and data is output on DQ0–DQ15. To
access the memory array as a 1 Meg x 8, BYTE# must
be LOW, DQ8–DQ14 must be High-Z, and all data must
be output on DQ0–DQ7. The DQ15/(A-1) pin becomes
the lowest order address input so that 1,048,576 loca-
tions can be read.
After power-up or RESET, the device is automati-
cally in the array read mode. All commands and their
operations are covered in the Command Set and Com-
mand Execution sections.
Status Register
Performing a READ of the status register requires
the same input sequencing as a READ of the array
except that the address inputs are “Dont Care.” The
status register contents are always output on DQ0–
DQ7, regardless of the condition of BYTE# on the
MT28F800B3. DQ8–DQ15 are LOW when BYTE# is
HIGH, and DQ8–DQ14 are High-Z when BYTE# is
LOW. Data from the status register is latched on the
falling edge of OE# or CE#, whichever occurs last. If the
contents of the status register change during a READ of
the status register, either OE# or CE# may be toggled
while the other is held LOW to update the output.
Following a WRITE or ERASE, the device automati-
cally enters the status register read mode. In addition,
a READ during a WRITE or ERASE produces the status
register contents on DQ0–DQ7. When the device is in
the erase suspend mode, a READ operation produces
the status register contents until another command is
issued. In certain other modes, READ STATUS REGIS-
TER may be given to return to the status register read
mode. All commands and their operations are
described in the Command Set and Command Execu-
tion sections.
Identification Register
A READ of the two 8-bit device identification regis-
ters requires the same input sequencing as a READ of
the array. WE# must be HIGH, and OE# and CE# must
be LOW. However, ID register data is output only on
DQ0–DQ7, regardless of the condition of BYTE# on the
MT28F800B3. A0 is used to decode between the two
bytes of the device ID register; all other address inputs
areDont Care. When A0 is LOW, the manufacturer
compatibility ID is output, and when A0 is HIGH, the
device ID is output. DQ8–DQ15 are High-Z when
BYTE# is LOW. When BYTE# is HIGH, DQ8–DQ15 are
00h when the manufacturer compatibility ID is read
and 88h when the device ID is read.
To get to the identification register read mode,
READ IDENTIFICATION may be issued while the
device is in certain other modes. In addition, the iden-
tification register read mode can be reached by apply-
ing a super-voltage (V
ID) to the A9 pin. Using this
method, the ID register can be read while the device is
in any mode. When A9 is returned to V
IL or VIH, the
device returns to the previous mode.

MT28F008B3VP-9 B TR

Mfr. #:
Manufacturer:
Micron
Description:
IC FLASH 8M PARALLEL 40TSOP I
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union