KAI−0330
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10
Saturation Signal vs. Substrate Voltage
As V
SUB
is decreased, V
SAT
increases and anti-blooming protection decreases.
As V
SUB
is increased, V
SAT
decreases and anti-blooming protection increases.
Figure 9. Example of V
SAT
vs V
SUB
0
100
200
300
400
500
600
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Sensor Plane Irradiance − H − (arbitrary)
Output Signal − Vout − (mV)
V
SUB
= 8 V
V
SUB
= 9 V
V
SUB
= 10 V
V
SUB
= 11 V
V
SUB
= 12 V
V
SUB
= 13 V
V
SUB
= 14 V
V
SUB
= 15 V
Frame Rate
Figure 10. Frame Rate vs. Horizontal Clock Frequency
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
0 5 10 15 20 25 30
Horizontal Clock Frequency (MHz)
Frame Rate (fps)
Single Channel Dual Channel
KAI−0330
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11
DEFECT DEFINITIONS
Table 10. OPERATIONAL CONDITIONS
Description Symbol Condition
Junction Temperature T
J
40°C
Integration Time t
INT
40 ms
Readout Rate t
READOUT
40 ms
Table 11. SPECIFICATIONS
Point Defects (Major)
Point Defects (Minor) Cluster Defects Column Defects
2 15 0 0
Table 12. DEFECT DEFINITIONS
Defect Type
Defect Definition
Major Defective Pixel A pixel whose signal deviates by more than 25 mV from the mean value of all active pixels under
dark field condition or by more than 15% from the mean value of all active pixels under uniform
illumination at 80% of saturation.
Minor Defective Pixel A pixel whose signal deviates by more than 6 mV from the mean value of all active pixels under dark
field condition.
Point Defect An isolated defective pixel.
Cluster Defect A group of 2 to 4 contiguous major defective pixels.
Column Defect A group of more than 4 contiguous major defective pixels along a single column or row.
NOTE: No row defect are allowed.
KAI−0330
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12
OPERATION
Table 13. ABSOLUTE MAXIMUM RATINGS
Rating Description Min. Max. Unit Notes
Temperature (@ 10% ±5%RH) Operation Without Damage −50 70 °C
Voltage (Between Pins)
SUB−WELL 0 40 V 1, 5
V
RD
, V
DD
, OG & V
SS
− WELL 0 15 V 2
V
OUTA
& V
OUTB
– WELL 0 15 V 2
fV1 − fV2
−12 20 V 2
fH1A, fH1B − fH2
−12 15 V 2
fH1A, fH1B, fH2, FDG − fV2
−12 15 V 2
fH2 − OG & V
SS
−12 15 V 2
fR – SUB
−20 0 V 1, 2, 4
All Clocks – WELL −12 15 V 2
Current Output Bias Current (I
OUT
) 10 mA 3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Under normal operating conditions the substrate voltage should be above +7 V, but may be pulsed to 40 V for electronic shuttering.
2. Care must be taken in handling so as not to create static discharge which may permanently damage the device.
3. Per Output, l
OUT
affects the band-width of the outputs.
4. fR should never be more positive than V
SUB
.
5. Refer to Application Note Using Interline CCD Image Sensors s in High Intensity Visible Lighting Conditions.
DC Operating Conditions
Table 14. DC OPERATING CONDITIONS
Description Symbol Min. Nom. Max. Unit Pin Impedance
Reset Drain V
RD
8.5 9 9.5 V
5 pF, > 1.2 MW
Reset Drain Current I
RD
0.2 mA
Output Amplifier Return & OG V
SS
0 V
30 pF, > 1.2 MW
Output Amplifier Return Current I
SS
5 mA
Output Amplifier Supply VDD 12 15.0 15.5 V
30 pF, > 1.2 MW
Output Bias Current (Note 4) I
OUT
5 10 mA
P-Well (Note 1) WELL 0.0 V Common
Ground (Note 1) GND 0.0 V
Fast Dump Gate (Note 2) FDG −5.5 −5.0 −4.5 V
20 pF, > 1.2 MW
Substrate (Notes 3, 7) SUB 7 V
SUB
15 V
1 nF, > 1.2 MW
1. The WELL and GND pins should be connected to P-well ground.
2. The voltage level specified will disable the fast dump feature.
3. This pin may be pulsed to V
ES
= 40 V for electronic shuttering.
4. Per output. Note also that I
OUT
affects the bandwidth of the outputs.
5. Pins shown with impedance greater than 1.2 MW are expected resistances. These pins are only verified to 1.2 MW.
6. The operating levels are for room temperature operation. Operation at other temperatures may or may not require adjustments of these
voltages.
7. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions.

KAI-0330-ABA-CB-AA-SINGLE

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Image Sensor Monochrome CCD 648x484Pixels 20-Pin CDIP UNTBX
Lifecycle:
New from this manufacturer.
Delivery:
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