RE46C190
DS22271A-page 10 2010 Microchip Technology Inc.
Push-to-Test Alarm
Memory On Time
T
HON4
13 9.8 10.4 11.0 ms Alarm memory active,
push-to-test
Push-to-Test Alarm
Memory Horn Period
T
HPER4
13 235 250 265 ms Alarm memory active,
push-to-test
Interconnect Signal Operation (IO)
IO Active Delay T
IODLY1
12 — 0 — s From start of local alarm
to IO active
Remote Alarm Delay
with Temporal Horn
Pattern
T
IODLY2A
12 0.780 1.00 1.25 s No local alarm,
from IO active to alarm
Remote Alarm Delay
with Continuous Horn
Pattern
T
IODLY2B
12 380 572 785 ms No local alarm,
from IO active to alarm
IO Charge
Dump Duration
T
IODMP
12 1.23 1.31 1.39 s At conclusion of local
alarm or test
IO Filter T
IOFILT
12 — — 313 ms Standby, no alarm
Hush Timer Operation
Hush Timer Period T
TPER
8.0 8.6 9.1 Min No alarm
EOL
End-of-Life
Age Sample
T
EOL
314 334 354 Hours EOL Enabled; Standby
Detection
IRED On Time T
IRON
2 — 100 — µs Prog Bits 3,4 = 1,1
2 — 200 — µs Prog Bits 3,4 = 0,1
2 — 300 — µs Prog Bits 3,4 = 1,0
2 — 400 — µs Prog Bits 3,4 = 0,0
TEMPERATURE CHARACTERISTICS
Electrical Specifications: All limits specified for V
DD
=3V, V
BST
= 4.2V and V
SS
= 0V, Except where noted in the
Electrical Characteristics.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-10 — +60 °C
Storage Temperature Range T
STG
-55 — +125 °C
Thermal Package Resistances
Thermal Resistance, 16L-SOIC (150 mil.) θ
JA
— 86.1 — °C/W
AC ELECTRICAL CHARACTERISTICS (CONTINUED)
AC Electrical Characteristics: Unless otherwise indicated, all parameters apply at T
A
= -10° to +60°C, V
DD
= 3V,
V
BST
= 4.2V, Typical Application (unless otherwise noted) (Note 1 to Note 4).
Parameter Symbol Test Pin Min Typ Max Units Condition
Note 1: See timing diagram for Horn Pattern (Figure 5-2).
2: T
PCLK
and T
IRON
are 100% production tested. All other AC parameters are verified by functional testing.
3: Typical values are for design information only.
4: Limits over the specified temperature range are not production tested, and are based on characterization
data.