RE46C190
DS22271A-page 10 2010 Microchip Technology Inc.
Push-to-Test Alarm
Memory On Time
T
HON4
13 9.8 10.4 11.0 ms Alarm memory active,
push-to-test
Push-to-Test Alarm
Memory Horn Period
T
HPER4
13 235 250 265 ms Alarm memory active,
push-to-test
Interconnect Signal Operation (IO)
IO Active Delay T
IODLY1
12 0 s From start of local alarm
to IO active
Remote Alarm Delay
with Temporal Horn
Pattern
T
IODLY2A
12 0.780 1.00 1.25 s No local alarm,
from IO active to alarm
Remote Alarm Delay
with Continuous Horn
Pattern
T
IODLY2B
12 380 572 785 ms No local alarm,
from IO active to alarm
IO Charge
Dump Duration
T
IODMP
12 1.23 1.31 1.39 s At conclusion of local
alarm or test
IO Filter T
IOFILT
12 313 ms Standby, no alarm
Hush Timer Operation
Hush Timer Period T
TPER
8.0 8.6 9.1 Min No alarm
EOL
End-of-Life
Age Sample
T
EOL
314 334 354 Hours EOL Enabled; Standby
Detection
IRED On Time T
IRON
2 100 µs Prog Bits 3,4 = 1,1
2 200 µs Prog Bits 3,4 = 0,1
2 300 µs Prog Bits 3,4 = 1,0
2 400 µs Prog Bits 3,4 = 0,0
TEMPERATURE CHARACTERISTICS
Electrical Specifications: All limits specified for V
DD
=3V, V
BST
= 4.2V and V
SS
= 0V, Except where noted in the
Electrical Characteristics.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-10 +60 °C
Storage Temperature Range T
STG
-55 +125 °C
Thermal Package Resistances
Thermal Resistance, 16L-SOIC (150 mil.) θ
JA
86.1 °C/W
AC ELECTRICAL CHARACTERISTICS (CONTINUED)
AC Electrical Characteristics: Unless otherwise indicated, all parameters apply at T
A
= -10° to +60°C, V
DD
= 3V,
V
BST
= 4.2V, Typical Application (unless otherwise noted) (Note 1 to Note 4).
Parameter Symbol Test Pin Min Typ Max Units Condition
Note 1: See timing diagram for Horn Pattern (Figure 5-2).
2: T
PCLK
and T
IRON
are 100% production tested. All other AC parameters are verified by functional testing.
3: Typical values are for design information only.
4: Limits over the specified temperature range are not production tested, and are based on characterization
data.
2010 Microchip Technology Inc. DS22271A-page 11
RE46C190
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Tab l e 2-1.
TABLE 2-1: PIN FUNCTION TABLE
RE46C190
SOIC
Symbol Function
1V
SS
Connect to the negative supply voltage.
2 IRED Provides a regulated and programmable pulsed current for the infrared emitter
diode.
3V
DD
Connect to the positive supply or battery voltage.
4 TEST This input is used to invoke Test modes and the Timer mode. This input has an
internal pull-down.
5 TEST2 Test input for test and programming modes. This input has an internal pull-down.
6 IRP Connect to the anode of the photo diode.
7 IRN Connect to the cathode of the photo diode.
8 RLED Open drain NMOS output, used to drive a visible LED. This pin provides load current
for the low battery test, and is a visual indicator for Alarm and Hush modes.
9 GLED Open drain NMOS output used to drive a visible LED to provide visual indication of
an Alarm Memory condition.
10 FEED Usually connected to the feedback electrode through a current limiting resistor. If not
used, this pin must be connected to V
DD
or V
SS
.
11 IRCAP Used to charge and monitor the IRED capacitor.
12 IO This bidirectional pin provides the capability to interconnect many detectors in a
single system. This pin has an internal pull-down device and a charge dump device.
13 HB This pin is connected to the metal electrode of a piezoelectric transducer.
14 HS This pin is a complementary output to HB, connected to the ceramic electrode of the
piezoelectric transducer.
15 V
BST
Boosted voltage produced by DC-DC converter.
16 LX Open drain NMOS output, used to drive the boost converter inductor. The inductor
should be connected from this pin to the positive supply through a low resistance
path.
RE46C190
DS22271A-page 12 2010 Microchip Technology Inc.
NOTES:

RE46C190S16F

Mfr. #:
Manufacturer:
Description:
Smoke Detectors 3V E-Cal Photo S.D. IC
Lifecycle:
New from this manufacturer.
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