JUNE 2001 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
TISP4xxxH3BJ Typical Characteristics
Figure 2.
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
|I
D
| -
Off-State Current - µA
0·001
0·01
0·1
1
10
100
TCHAG
V
D
= ±50 V
Figure 4.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
V
T
- On-State Voltage - V
0.7 1.5 2 3 4 5 7110
I
T
- On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
T
A
= 25 °C
t
W
= 100 µs
TC4HACC
Figure 5.
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
Figure 3.
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.95
1.00
1.05
1.10
TC4HAF
JUNE 2001 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
TISP4xxxM3BJ Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
T
J
- Junction Temperature - °C
Off-State Current - µA
Figure 6.
-25 0 25 50 75 100 125 150
|I
D
| -
0·001
0·01
0·1
1
10
100
TCMAG
V
D
= ±50 V
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
Figure 7.
T
J
- Junct ion Temperature - °C
Normalized Breakover Voltage
-25 0 25 50 75 100 125 150
0.95
1.00
1.05
1.10
TC4MAF
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
On-State Current - A
Figure 8.
V
T
- On-State Voltage - V
0.7 1.5 2 3 4 5 7110
I
T
-
1.5
2
3
4
5
7
15
20
30
40
50
70
1
10
100
T
A
= 25 °C
t
W
= 100 µs
TC4MACB
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
T
J
- Junction Temperature - °C
Normalized Holding Current
Figure 9.
-25 0 25 50 75 100 125 150
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4MAD
JUNE 2001 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3/M3BJ Series for LCAS Protection
Rating Information
TISP4xxxH3BJ
Figure 10.
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·1 1 10 100 1000
I
TSM(t)
-
Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4HAC
V
GEN
= 600 Vrms, 50/60 Hz
R
GEN
= 1.4*V
GEN
/I
TSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
= 25 °C
TISP4xxxM3BJ
Figure 11.
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
Non-Repetitive Peak On-State Current - A
0·1 1 10 100 1000
I
TSM(t)
-
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4MAC
V
GEN
= 600 Vrms, 50/60 Hz
R
GEN
= 1.4*V
GEN
/I
TSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
= 25
°C

TISP4219H3BJR

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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