IRF8113TRPBF Datasheet IRF8113TRPBF, IRF8113PBF | P1-P3

www.irf.com 1

6/29/06

IRF8113PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 10

Benefits

l Very Low R

DS(on)

at 4.5V V

GS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 100% Tested for R

G

l Lead-Free

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Synchronous Rectifier MOSFET for

Isolated DC-DC Converters in

Networking Systems

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

SO-8

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Power Dissipation

W

P

D

@T

A

= 70°C

Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JL

Junction-to-Drain Lead

––– 20 °C/W

R

θ

JA

Junction-to-Ambient

––– 50

Max.

17.2

13.8

135

± 20

30

-55 to + 150

2.5

0.02

1.6

V

DSS

R

DS(on)

max

Qg Ty

p.

30V

5.6m @V

GS

= 10V

24nC

PD - 95138B

IRF8113PbF

2 www.irf.com

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 4.7 5.6

m

Ω

––– 5.8 6.8

V

GS(th)

Gate Threshold Voltage 1.5 ––– 2.2 V

∆

V

GS(th)

Gate Threshold Voltage Coefficient ––– - 5.4 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 73 ––– ––– S

Q

g

Total Gate Charge ––– 24 36

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 6.2 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 2.0 ––– nC

Q

gd

Gate-to-Drain Charge ––– 8.5 –––

Q

godr

Gate Charge Overdrive ––– 7.3 ––– See Fig. 16

Q

sw

Switch Charge (Q

gs2

+ Q

gd

) ––– 10.5 –––

Q

oss

Output Charge ––– 10 ––– nC

R

G

Gate Resistance ––– 0.8 1.5

Ω

t

d(on)

Turn-On Delay Time ––– 13 –––

t

r

Rise Time ––– 8.9 –––

t

d(off)

Turn-Off Delay Time ––– 17 ––– ns

t

f

Fall Time ––– 3.5 –––

C

iss

Input Capacitance ––– 2910 –––

C

oss

Output Capacitance ––– 600 ––– pF

C

rss

Reverse Transfer Capacitance ––– 250 –––

Avalanche Characteristics

Parameter Units

E

AS

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 3.1

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 135

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 34 51 ns

Q

rr

Reverse Recovery Charge ––– 21 32 nC

Conditions

Max.

48

13.3

ƒ = 1.0MHz

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 17.2A

MOSFET symbol

V

DS

= 10V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

I

D

= 13.3A

V

DS

= 15V

V

GS

= 20V

V

GS

= -20V

V

DS

= 24V, V

GS

= 0V

T

J

= 25°C, I

F

= 13.3A, V

DD

= 10V

di/dt = 100A/µs

T

J

= 25°C, I

S

= 13.3A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

V

GS

= 4.5V, I

D

= 13.8A

V

GS

= 4.5V

Typ.

–––

V

DS

= V

GS

, I

D

= 250µA

Clamped Inductive Load

V

DS

= 15V, I

D

= 13.3A

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

–––

I

D

= 13.3A

V

GS

= 0V

V

DS

= 15V

IRF8113PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01 0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

0.01 0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

2.5 3.0 3.5 4.0

V

GS

, Gate-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

20µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 16.6A

V

GS

= 10V

IRF8113TRPBF

IRF8113TRPBF

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