EZ-PD™ CCG4
Document Number: 001-98440 Rev. *F Page 19 of 30
XRES
SID.GIO#5 R
PULLUP
Pull-up resistor 3.5 5.6 8.5 k
SID.GIO#6 R
PULLDOWN
Pull-down resistor 3.5 5.6 8.5 k
SID.GIO#16 I
IL
Input leakage current
(absolute value)
– 2 nA 25 °C, V
DDIO
= 3.0 V
SID.GIO#17 C
IN
Input capacitance 7 pF
SID.GIO#43 V
HYSTTL
Input hysteresis LVTTL 25 40 mV
V
DDIO
2.7 V. Guaranteed
by characterization.
SID.GPIO#44 V
HYSCMOS
Input hysteresis CMOS 0.05 × V
DDIO
––mV
Guaranteed by
characterization
SID69 I
DIODE
Current through protection
diode to V
DDIO
/Vss
100 µA
Guaranteed by
characterization
SID.GIO#45 I
TOT_GPIO
Maximum total source or sink
chip current
200 mA
Guaranteed by
characterization
Table 10. I/O DC Specifications (continued)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
Table 11. I/O AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID70 T
RISEF
Rise time 2 12 ns 3.3-V V
DDIO
, Cload = 25 pF
SID71 T
FALLF
Fall time 2 12 ns 3.3-V V
DDIO
, Cload = 25 pF
Table 12. XRES DC Specifications
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID.XRES#1 V
IH
Input voltage HIGH threshold 0.7 × V
DDIO
–– VCMOS input
SID.XRES#2 V
IL
Input voltage LOW threshold 0.3 × V
DDIO
VCMOS input
SID.XRES#3 C
IN
Input capacitance 7 pF
SID.XRES#4 V
HYSXRES
Input voltage hysteresis 0.05 × V
DDIO
mV
Guaranteed by
characterization
EZ-PD™ CCG4
Document Number: 001-98440 Rev. *F Page 20 of 30
Digital Peripherals
The following specifications apply to the Timer/Counter/PWM peripherals in the Timer mode.
Pulse Width Modulation (PWM) for GPIO Pins
I
2
C
Table 13. PWM AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID.TCPWM.3 T
CPWMFREQ
Operating frequency Fc MHz Fc max = CLK_SYS. Maximum = 48 MHz
SID.TCPWM.4 T
PWMENEXT
Input trigger pulse width 2/Fc ns For all trigger events
SID.TCPWM.5 T
PWMEXT
Output trigger pulse width 2/Fc ns
Minimum possible width of Overflow,
Underflow, and CC (Counter equals
Compare value) outputs
SID.TCPWM.5A T
CRES
Resolution of counter 1/Fc ns
Minimum time between successive
counts
SID.TCPWM.5B PWM
RES
PWM resolution 1/Fc ns Minimum pulse width of PWM output
SID.TCPWM.5C Q
RES
Quadrature inputs resolution 1/Fc ns
Minimum pulse width between
quadrature-phase inputs
Table 14. Fixed I
2
C AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID153 F
I2C1
Bit rate 1 Mbps
Table 15. Fixed UART AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID162 F
UART
Bit rate 1 Mbps
Table 16. Fixed SPI AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID166 F
SPI
SPI operating frequency
(Master; 6X oversampling)
––8MHz
Table 17. Fixed SPI Master Mode AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details / Conditions
SID167 T
DMO
MOSI valid after SClock
driving edge
––15ns
SID168 T
DSI
MISO valid before SClock
capturing edge
20 ns Full clock, late MISO sampling
SID169 T
HMO
Previous MOSI data hold
time
0 ns Referred to Slave capturing edge
EZ-PD™ CCG4
Document Number: 001-98440 Rev. *F Page 21 of 30
Memory
System Resources
Power-on-Reset (POR) with Brown Out
Table 18. Fixed SPI Slave Mode AC Specifications
(Guaranteed by Characterization)
Spec ID Parameter Description Min Typ Max Units Details / Conditions
SID170 T
DMI
MOSI valid before Sclock
capturing edge
40 ns
SID171 T
DSO
MISO valid after Sclock driving
edge
– –
48 + 3 *
T
SCB
ns
T
SCB
= T
CPU
=
1/24 MHz
SID171A T
DSO_EXT
MISO valid after Sclock driving
edge in Ext Clk mode
– – 48 ns
SID172 T
HSO
Previous MISO data hold time 0 ns
SID172A T
SSELSCK
SSEL valid to first SCK valid edge 100 ns
Table 19. Flash AC Specifications
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID.MEM#4 T
ROWWRITE
[10]
Row (block) write time (erase and
program)
– – 20 ms
SID.MEM#3 T
ROWERASE
[10]
Row erase time 13 ms
SID.MEM#8 T
ROWPROGRAM
[10]
Row program time after erase 7 ms
SID178 T
BULKERASE
[10]
Bulk erase time (128 KB) 35 ms
SID180 T
DEVPROG
[10]
Total device program time 25 seconds
Guaranteed by
characterization
SID.MEM#6 F
END
Flash endurance 100 K cycles
Guaranteed by
characterization
SID182 F
RET1
Flash retention. T
A
55 °C, 100 K
P/E cycles
20 years
Guaranteed by
characterization
SID182A F
RET2
Flash retention. T
A
85 °C, 10 K
P/E cycles
10 – – years
Guaranteed by
characterization
Note
10. It can take as much as 20 milliseconds to write to flash. During this time the device should not be reset, or flash operations will be interrupted and cannot be relied
on to have completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs.
Make certain that these are not inadvertently activated.
Table 20. Imprecise Power On Reset (PRES)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID185 V
RISEIPOR
Rising trip voltage 0.80 1.50 V
Guaranteed by
characterization
SID186 V
FALLIPOR
Falling trip voltage 0.75 1.4 V
Guaranteed by
characterization
Table 21. Precise Power On Reset (POR)
Spec ID Parameter Description Min Typ Max Units Details/Conditions
SID190 V
FALLPPOR
BOD trip voltage in active and
sleep modes
1.48 1.62 V
Guaranteed by
characterization
SID192 V
FALLDPSLP
BOD trip voltage in Deep Sleep 1.1 1.5 V
Guaranteed by
characterization

CYPD4226-40LQXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
USB Interface IC CCG4
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union