August 2003 19 KS8737
KS8737 Micrel
Absolute Maximum Ratings (Note 1)
Supply Voltage (V
DD
) .................................................+4.0V
Supply Reference to GND........................... 0.5V to +7.0V
Input Voltage (All Inputs)............................. 0.5V to +4.0V
Output Voltage (All Outputs) ....................... 0.5V to +4.0V
Lead Temperature (soldering, 10 sec.) ..................... 270°C
Storage Temperature (T
S
) ....................... 55°C to +150°C
Operating Ratings (Note 2)
Supply Voltage (V
DD
) .......................... +3.135V to +3.465V
Ambient Temperature (T
A
) ............................. 0°C to +70°C
Package Thermal Resistance, (Note 3)
TQFP
JA
) No Air Flow ...................................53.7°C/W
Electrical Characteristics (Note 4)
V
DD
= 3.3V ±5%; T
A
= 0°C to +70°C; unless noted.
Symbol Parameter Condition Min Typ Max Units
Total Supply Current (including TX output driver current)
I
DD1
Normal 100BaseTX 100 120 mA
I
DD2
Normal 10BaseT (50% utilization) 135 150 mA
I
DD3
Power Saving Mode 100BaseTX 80 90 mA
I
DD4
Power Save Mode 10BaseT 40 45 mA
I
DD5
Power Down Mode 910mA
TTL Inputs
V
IH
Input High Voltage 2.0 V
V
IL
Input Low Voltage 0.8 V
I
IN
Input Current V
IN
= GND ~ V
DD
10 10 µA
TTL Outputs
V
OH
Output High Voltage I
OH
= 4mA 2.4 V
V
OL
Output Low Voltage I
OL
= 4mA 0.4 V
|I
OZ
| Output Tr-State Leakage 10 µA
100BaseTX Receive
V
B
RXP/RXM Input Bias Voltage 2.7 V
R
IN
RXP/RXM Differential Input 8 k
Resistance
Propagation Delay from magnetics to RDTX 50 110 ns
100BaseTX Transmit (measured differentially after 1:1 transformer)
V
O
Peak Differential Output Voltage 50 from each output to V
DD
0.95 1.05 V
V
IMB
Output Voltage Imbalance 50 from each output to V
DD
2%
t
r
, t
t
Rise/Fall Time 35ns
Rise/Fall Time Imbalance 0 0.5 ns
100BaseTX Transmit (measured differentially after 1:1 transformer)
Duty Cycle Distortion ±0.5 ns
Overshoot 5%
V
SET
Reference Voltage of ISET 1.25 V
Propagation Delay from TDTX to magentics 45 60 ns
Jitters 0.7 1.4 ns
(pk-pk)
Note 1. Exceeding the absolute maximum rating may damage the device.
Note 2. The device is not guaranteed to function outside its operating rating. Unused inputs must always be tied to an appropriate logic voltage level
(Ground to V
DD
).
Note 3. No HS (heat spreader) in package.
Note 4. Specification for packaged product only.
KS8737 Micrel
KS8737 20 August 2003
Symbol Parameter Condition Min Typ Max Units
10BaseTX Receive
V
B
RXP/RXM Input Bias Voltage 1.4 V
R
IN
RXP/RXM Differential 8k
Input Resistance
V
SQ
Squelch Threshold 5MHz square wave 400 mV
10BaseTX Transmit (measured differentially after 1:1 transformer)
V
P
Peak Differential Output Voltage 50 from each output to V
DD
2.2 2.8 V
Jitters Added 50 from each output to V
DD
±3.5 ns
t
r
, t
t
Rise/Fall Time 25 ns
Clock Outputs
X1, X2 Crystal Oscillator 25 MHZ
RXC
100
Receive Clock, 100TX 25 MHZ
RXC
10
Receive Clock, 10T 2.5 MHZ
Receive Clock Jitters 3.0 ns
(pk-pk)
TXC
100
Transmit Clock, 100TX 25 MHZ
TXC
10
Transmit Clock, 10T 2.5 MHZ
Transmit Clock Jitters 1.8 ns
(pk-pk)
August 2003 21 KS8737
KS8737 Micrel
Timing Diagrams
TXC
t
S
U2
TXEN
t
HD2
TXD[3:0],
TXER
t
SU1
CRS
t
CRS2
t
CRS1
TXP/TXM
t
LAT
Symbol
Out
Data
In
t
HD1
Figure 1. 10BaseT MII Transmit Timing
Symbol Parameter Min Typ Max Units
t
SU1
TXD [3:0] Set-Up to TXC High 10 ns
t
SU2
TXEN Set-Up to TXC High 10 ns
t
HD1
TXD [3:0] Hold After TXC High 0 ns
t
HD2
TXEN Hold After TXC High 0 ns
t
CRS1
TXEN High to CRS Asserted Latency 2 BT
t
CRS2
TXEN Low to CRS De-Asserted Latency 5 BT
t
LAT
TXEN High to TXP/TXM Output (TX Latency) 3 BT
t
SQE
COL (SQE) Delay Aftter TXEN Ae-Asserted 1.5 µs
t
SQEP
COL (SQE) Pulse Duration 1.0 µs
Table 2. 10BaseT MII Transmit Timing Parameters

KS8737-EVAL

Mfr. #:
Manufacturer:
Description:
BOARD EVAL EXPERIMENT FOR KS8737
Lifecycle:
New from this manufacturer.
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