LT5517EUF#PBF

LT5517
4
5517f
I/Q Output Power, IM3
vs RF Input Power
RF INPUT POWER (dBm)
–18
–100
P
OUT
, IM3 (dBm/TONE)
–80
–60
–40
–20
0
20
–14 –10 6 2
5517 G04
2
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
f
2XLO
= 1602MHz
V
CC
= 5V
f
RF1
= 799.9MHz
f
RF2
= 800.1MHz
OUTPUT POWER
IM3
RF INPUT FREQUENCY (MHz)
0
GAIN MISMATCH (dB)
0
0.20
0.40
800
5517 G05
0.20
0.40
0.80
200
400
600
100
300
500
700 900
0.60
0.80
0.60
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
P
2XLO
= –10dBm
f
BB
= 1MHz
V
CC
= 5V
RF INPUT FREQUENCY (MHz)
0
–6
PHASE MISMATCH (DEGREE)
–4
0
2
4
200
400
500 900
5517 G06
–2
100 300
600
700
800
6
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
P
2XLO
= –10dBm
f
BB
= 1MHz
V
CC
= 5V
I/Q Gain Mismatch
vs RF Input Frequency
I/Q Phase Mismatch
vs RF Input Frequency
Conv Gain, IIP3 vs Supply Voltage NF vs 2XLO Input Power
Conv Gain, IIP3
vs 2XLO Input Power
SUPPLY VOLTAGE (V)
4.5
16
20
28
5.25
5517 G07
12
8
4.75 5 5.5
4
0
24
IIP3
CONV GAIN (dB), IIP3 (dBm)
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
f
2XLO
= 1602MHz
V
CC
= 5V
CONV GAIN
f
RF1
= 799.9MHz
f
RF2
= 800.1MHz
2XLO INPUT POWER (dBm)
–15
NF (dB)
10
12
14
–3
5517 G08
8
6
4
–12
–9
–6
0
f
RF
= 800MHz
f
RF
= 400MHz
f
RF
= 200MHz
f
RF
= 40MHz
T
A
= 25°C
V
CC
= 5V
2XLO INPUT POWER (dBm)
–15
0
CONV GAIN (dB), IIP3 (dBm)
4
8
12
16
20
24
IIP3
–12 9 6 –3
5517 G09
0
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
f
2XLO
= 1602MHz
V
CC
= 5V
f
RF1
= 799.9MHz
f
RF2
= 800.1MHz
CONV GAIN
IIP2 vs 2XLO Input Power
LO-RF Leakage
vs 2XLO Input Power
2XLO INPUT POWER (dBm)
–15
IIP2 (dBm)
45
50
55
–6
0
5517 G10
40
35
30
–12 –9 –3
60
65
70
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
f
2XLO
= 1602MHz
V
CC
= 5V
2XLO INPUT POWER (dBm)
–15
–120
LO-RF LEAKAGE (dBm)
–110
–100
–90
–80
–70
–60
–12 9 6 –3
5517 G11
0
T
A
= 25°C
V
CC
= 5V
f
2XLO
= 1600MHz
f
2XLO
= 800MHz
f
2XLO
= 80MHz
2XLO-RF Leakage
vs 2XLO Input Power
2XLO INPUT POWER (dBm)
–15
–120
2XLO-RF LEAKAGE (dBm)
–110
–100
–90
–80
–70
–60
–12 9 6 –3
5517 G12
0
T
A
= 25°C
V
CC
= 5V
f
2XLO
= 1600MHz
f
2XLO
= 800MHz
f
2XLO
= 80MHz
TYPICAL PERFOR A CE CHARACTERISTICS
UW
f
RF
= 800MHz, P
2XLO
= –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)
LT5517
5
5517f
UU
U
PI FU CTIO S
GNDRF (Pins 1, 4): Ground Pins for RF Termination.
These pins are not internally connected, and should be
connected to the PCB ground plane for best RF isolation.
RF
+
, RF
(Pins 2, 3): Differential RF Input Pins. These pins
are internally biased to 2.30V. These two pins should be
DC blocked when connected to ground or other matching
components. The inputs can be terminated in a single-
ended configuration, but differential input drive is pre-
ferred for best performance. An external matching network
is required for impedance transformation.
EN (Pin 5): Enable Pin. When the input voltage is higher
than 1.6V, the circuit is completely turned on. When the
input voltage is less than 1.3V, the circuit is turned off.
V
CC
(Pins 6, 7, 8, 12): Power Supply Pins. These pins
should be decoupled using 1000pF and 0.1µF capacitors.
GND (Pins 9, 11): Ground Pins. These pins are internally
tied together and to the Exposed Pad. They should be
connected to the PCB ground plane.
2XLO (Pin 10): 2XLO Input Pin. This pin is internally
biased to 1V. The input signal’s frequency should be twice
that of the desired demodulator LO frequency. The pin
should be AC coupled with an external DC blocking
capacitor.
Q
OUT
, Q
OUT
+
(Pins 13, 14): Differential Baseband Output
Pins of the Q-Channel. The internal DC bias voltage is
V
CC
– 0.78V for each pin.
I
OUT
, I
OUT
+
(Pins 15, 16): Differential Baseband Output
Pins of the I-Channel. The internal DC bias voltage is
V
CC
– 0.78V for each pin.
Exposed Pad (Pin 17): Ground Return for the Entire IC.
This pin must be soldered to the printed circuit board
ground plane.
RF-LO Isolation
vs RF Input Power
Conv Gain
vs Baseband Frequency
RF, 2XLO Port Return Loss
vs Frequency
RF INPUT POWER (dBm)
–15
100
110
120
5
5517 G13
90
80
–10 –5 0 10
70
60
50
RF-LO ISOLATION (dB)
f
RF
= 800MHz
f
RF
= 400MHz
f
RF
= 40MHz
T
A
= 25°C
V
CC
= 5V
BASEBAND FREQUENCY (MHz)
–2
CONV GAIN (dB)
0
2
4
6
0.1 10 100 1000
5517 G14
–4
1
T
A
= 85°C
f
2XLO
= 1602MHz
V
CC
= 5V
T
A
= –40°C
T
A
= 25°C
FREQUENCY (GHz)
0
RETURN LOSS (dB)
–10
–5
0
1.60
5517 G15
–15
RF
LO
–20
–25
0.40
0.80
1.20
2
TYPICAL PERFOR A CE CHARACTERISTICS
UW
f
RF
= 800MHz, P
2XLO
= –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)
LT5517
6
5517f
BLOCK DIAGRA
W
RF
+
I
OUT
+
2XLO
÷2
0°
BIAS
16
I
OUT
15
Q
OUT
+
14
Q
OUT
13
LO BUFFERS
LPF
I-MIXER
LPF
Q-MIXER
2
6
V
CC
5
EN
9
GND GND EXPOSED
PAD
7
V
CC
8
V
CC
12
V
CC
RF
5517 BD
3
11 17 10
RF AMP
90°

LT5517EUF#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Modulator / Demodulator 40MHz - 900MHz Quadrature Demodulator
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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