IHP10T120
Soft Switching Series
Power Semiconductors
1 Rev. 2.4 Sept. 07
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
G
C
E
• Short circuit withstand time – 10µs
• Designed for :
- Soft Switching Applications
- Induction Heating
• TrenchStop and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
CE(sat)
- Very low V
ce(sat)
• Very soft, fast recovery anti-parallel EmCon
™
HE diode
• Low EMI
• Qualified according to JEDEC
1
for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
Type V
CE
I
C
V
CE(sat),Tj=25°C
T
j,max
Marking Package
IHP10T120 1200V 10A 1.7V
150°C
H10T120 PG-TO-220-3-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CE
1200 V
DC collector current
T
C
= 25°C
T
C
= 100°C
I
C
16
10
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
24
Turn off safe operating area
V
CE
≤ 1200V, T
j
≤ 150°C
-
24
Diode forward current
T
C
= 25°C
T
C
= 100°C
I
F
11
7
Diode pulsed current, t
p
limited by T
jmax
, T
c
= 25°C I
Fpuls
16.5
A
Diode surge non repetitive current, t
p
limited by T
jmax
T
C
= 25°C, t
p
= 10ms, sine halfwave
T
C
= 25°C, t
p
≤ 2.5µs, sine halfwave
T
C
= 100°C, t
p
≤ 2.5µs, sine halfwave
I
FSM
28
50
40
A
Gate-emitter voltage V
GE
±20
V
Short circuit withstand time
2)
V
GE
= 15V, V
CC
≤ 1200V, T
j
≤ 150°C
t
SC
10
µs
Power dissipation, T
C
= 25°C
P
tot
138 W
Operating junction temperature T
j
-40...+150
Storage temperature T
stg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
°C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-220-3-1
®
