IHP10T120

P1-P3 P4-P6 P7-P9 P10-P12 P13-P14

IHP10T120

Soft Switching Series

Power Semiconductors

4 Rev. 2.4 Sept. 07

Switching Characteristic, Inductive Load, at T

j

=150 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time t

d(on)

- 45 -

Rise time t

r

- 24 -

Turn-off delay time t

d(off)

- 592 -

Fall time t

f

- 177 -

ns

Turn-on energy E

on

- 0.83 -

Turn-off energy E

off

- 1.19 -

Total switching energy E

ts

T

j

=150°C,

V

CC

=610V,I

C

=10A,

V

GE

= 0 /15V,

R

G

= 81Ω

L

σ

1)

=180nH,

C

σ

1)

=39pF

Energy losses include

“tail” and diode

reverse recovery.

- 2.02 -

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time t

rr

- 185 - ns

Diode reverse recovery charge Q

rr

- 630 - nC

Diode peak reverse recovery current I

rrm

T

j

=150°C

V

R

=800V, I

F

=4A,

di

F

/dt=750A/µs

- 8.1 - A

1)

Leakage inductance L

σ

and Stray capacity C

σ

due to dynamic test circuit in Figure E.

IHP10T120

Soft Switching Series

Power Semiconductors

5 Rev. 2.4 Sept. 07

I

C

, COLLECTOR CURRENT

100Hz 1kHz 10kHz 100kHz

0A

5A

10A

15A

20A

T

C

=110°C

T

C

=80°C

I

C

, COLLECTOR CURRENT

1V 10V 100V 1000V

0,1A

1A

10A

DC

10µs

t

p

=2µs

50µs

500µs

2ms

200µs

f, SWITCHING FREQUENCY

V

CE

, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

(T

j

≤ 150°C, D = 0.5, V

CE

= 600V,

V

GE

= 0/+15V, R

G

= 81Ω)

Figure 2. Safe operating area

(D = 0, T

C

= 25°C,

T

j

≤150°C;V

GE

=15V)

P

to

t

, DISSIPATED POWER

25°C 50°C 75°C 100°C 125°C

0W

20W

40W

60W

80W

1

00W

1

20W

1

40W

I

C

, COLLECTOR CURRENT

25°C 75°C 125°C

0A

5A

10A

15A

20A

25A

T

C

, CASE TEMPERATURE T

C

, CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

(T

j

≤ 150°C)

Figure 4. Collector current as a function of

case temperature

(V

GE

≥ 15V, T

j

≤ 150°C)

I

c

I

c

IHP10T120

Soft Switching Series

Power Semiconductors

6 Rev. 2.4 Sept. 07

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V 6V

0A

5A

1

0A

1

5A

2

0A

15V

7V

9V

11V

13V

V

GE

=17V

I

C

, COLLECTOR CURRENT

0V 1V 2V 3V 4V 5V 6V

0A

5A

10A

15A

20A

15V

7V

9V

11V

13V

V

GE

=17V

V

CE

, COLLECTOR-EMITTER VOLTAGE

V

CE

, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(T

j

= 25°C)

Figure 6. Typical output characteristic

(T

j

= 150°C)

I

C

, COLLECTOR CURRENT

0V 2V 4V 6V 8V 10V 12V

0A

5A

10A

15A

2

0A

25°C

T

J

=150°C

V

CE(sat),

COLLECTOR-EMITT SATURATION VOLTAGE

-50°C 0°C 50°C 100°C

0,0V

0,5V

1,0V

1,5V

2,0V

2,5V

3,0V

I

C

=8A

I

C

=15A

I

C

=5A

I

C

=2.5A

V

GE

, GATE-EMITTER VOLTAGE T

J

, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic

(V

CE

=20V)

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(V

GE

= 15V)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P14

IHP10T120

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

IGBT Transistors LOW LOSS DuoPack 1200V 10A

Lifecycle:

New from this manufacturer.

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IHP10T120